MT40A256M16GE-075E:B vs K4A4G165WE-BCTD Comparación
Comparación detallada lado a lado de MT40A256M16GE-075E:B por Micron Technology y K4A4G165WE-BCTD por Samsung Electronics. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Micron Technology
MT40A256M16GE-075E:B - 4Gb DDR4 SDRAM 2666 MT/s | Micron
MT40A256M16GE-075E:B ✓ ActivoSamsung Electronics
K4A4G165WE-BCTD - 4Gb DDR4 SDRAM 256Mx16 1.2V | Samsung
K4A4G165WE-BCTD ✓ ActivoComparación de especificaciones
| Parámetro | MT40A256M16GE-075E:B | K4A4G165WE-BCTD |
|---|---|---|
| Marca | Micron Technology | Samsung Electronics |
| Categoría | Memory ICs | DRAM |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $3,95 | $11,38 |
| Tipo de memoria | DDR4 SDRAM | DDR4 SDRAM (volatile DRAM) |
| Tamaño de memoria | 4 Gbit | 4 Gbit |
| Organización de memoria | 256M x 16 | — |
| Memory Interface | Parallel | — |
| Clock Frequency | 1.33 GHz | — |
| Velocidad de datos | 2666 MT/s (DDR4-2666) | — |
| VDD / VDDQ | 1.2 V +/-60 mV | — |
| VPP | 2.5 V, -125 mV/+250 mV | — |
| Internal Banks | 16 | — |
| Refresh | 64 ms / 8192-cycle; 32 ms / 8192-cycle at 95C | — |
| I/O Type | 1.2 V pseudo open-drain | — |
| VREFDQ | On-die, internal, adjustable generation | — |
| Special Features | Temperature controlled refresh (TCR) | — |
| Encapsulado | 96-FBGA (9 x 14 mm) | FBGA-96 (TFBGA) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range for standard grade] | 0C to +85C |
| Access Time | [DATA_NEEDED: CAS latency / access time] | — |
| Memory Organization | — | 256M x 16 |
| Interfaz | — | Parallel, x16 |
| Supply Voltage (VDD) | — | 1.2 V (1.14 V to 1.26 V) |
| Die Generation | — | E-die |
| Terminal Count | — | 96 |
| Speed Grade | — | [DATA_NEEDED: max data rate / CAS latency for -BCTD suffix] |
| Estado RoHS | — | Compliant (per JLCPCB listing) |
| Product Status | — | Active |
| Datasheet Revision | — | K4A4G165WE Rev. 1.4, Jun. 2016 |
| Burst Length | — | BL8 (JEDEC DDR4) |
| Bank Group Architecture | — | Yes (DDR4) |