MT40A512M16HA-083E vs MT40A512M16JY-083E Comparación
Comparación detallada lado a lado de MT40A512M16HA-083E por Micron Technology y MT40A512M16JY-083E por Micron Technology. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Micron Technology
MT40A512M16JY-083E - 8Gb DDR4 SDRAM 2400MT/s x16 | Micron
MT40A512M16JY-083E ✓ ActivoComparación de especificaciones
| Parámetro | MT40A512M16HA-083E | MT40A512M16JY-083E |
|---|---|---|
| Marca | Micron Technology | Micron Technology |
| Categoría | Memory ICs | DRAM |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,00 | $5,85 |
| Tipo de memoria | DDR4 SDRAM | DDR4 SDRAM (Automotive) |
| Memory Density | 8Gbit | — |
| Memory Organization | 512M x 16 | — |
| Data Interface | Parallel DDR4, 16-bit | — |
| Velocidad de datos | 1.2 GHz data clock; DDR4-2400 class | 2400 MT/s (speed grade -083E) |
| VDD Supply | 1.2 V plus or minus 60 mV | — |
| VDDQ Supply | 1.2 V plus or minus 60 mV | — |
| VPP Supply | 2.5 V, -125 mV to +250 mV | — |
| I/O Interface | 1.2V pseudo open-drain | 1.2 V pseudo open-drain |
| Tensión de referencia | On-die internal adjustable VREFDQ | — |
| Refresh Cycle Count | 8192 cycles | — |
| Refresh Time, -40C to 85C | 64 ms | — |
| Refresh Time, >85C to 95C | 32 ms | — |
| Refresh Time, >95C | 16 ms | — |
| Encapsulado | 96-ball FBGA, 9 x 14 mm | 96-FBGA (8 x 14 mm) |
| Ball Pitch | 0.8 mm | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | — |
| Estado RoHS | Compliant | — |
| Density | — | 8 Gbit |
| Organización de memoria | — | 512M x 16 |
| Clock Frequency | — | 1.2 GHz (tCK = 0.83 ns) |
| VDD Supply Voltage | — | 1.2 V +/- 60 mV |
| VDDQ Supply Voltage | — | 1.2 V +/- 60 mV |
| VPP Supply Voltage | — | 2.5 V, -125 mV, +250 mV |
| VREFDQ | — | On-die internal adjustable generation |
| Refresh Structure | — | 8192-cycle refresh |
| Refresh Window | — | 64 ms at -40C to 85C; 32 ms at >85C to 95C; 16 ms at >95C |
| ECCN | — | EAR99 |
| Sin halógenos | — | Compliant |
| Country of Origin | — | China |