MT40A512M16HA-083E vs MT40A512M16JY-083E 对比

详细并排对比 MT40A512M16HA-083E 出自 Micron Technology 和 MT40A512M16JY-083E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Micron Technology
MT40A512M16HA-083E MT40A512M16HA-083E - 8Gb DDR4-2400 SDRAM | Micron

MT40A512M16HA-083E - 8Gb DDR4-2400 SDRAM | Micron

MT40A512M16HA-083E ✓ 量产中
Micron Technology
MT40A512M16JY-083E MT40A512M16JY-083E - 8Gb DDR4 SDRAM 2400MT/s x16 | Micron

MT40A512M16JY-083E - 8Gb DDR4 SDRAM 2400MT/s x16 | Micron

MT40A512M16JY-083E ✓ 量产中

规格对比

参数 MT40A512M16HA-083E MT40A512M16JY-083E
品牌 Micron Technology Micron Technology
分类 Memory ICs DRAM
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.00 $5.85
存储器类型 DDR4 SDRAM DDR4 SDRAM (Automotive)
Memory Density 8Gbit —
Memory Organization 512M x 16 —
Data Interface Parallel DDR4, 16-bit —
数据速率 1.2 GHz data clock; DDR4-2400 class 2400 MT/s (speed grade -083E)
VDD Supply 1.2 V plus or minus 60 mV —
VDDQ Supply 1.2 V plus or minus 60 mV —
VPP Supply 2.5 V, -125 mV to +250 mV —
I/O Interface 1.2V pseudo open-drain 1.2 V pseudo open-drain
基准电压 On-die internal adjustable VREFDQ —
Refresh Cycle Count 8192 cycles —
Refresh Time, -40C to 85C 64 ms —
Refresh Time, >85C to 95C 32 ms —
Refresh Time, >95C 16 ms —
封装 96-ball FBGA, 9 x 14 mm 96-FBGA (8 x 14 mm)
Ball Pitch 0.8 mm —
安装类型 Surface Mount Surface Mount
工作温度 [DATA_NEEDED: operating temperature range] —
RoHS 状态 Compliant —
Density — 8 Gbit
存储组织 — 512M x 16
Clock Frequency — 1.2 GHz (tCK = 0.83 ns)
VDD Supply Voltage — 1.2 V +/- 60 mV
VDDQ Supply Voltage — 1.2 V +/- 60 mV
VPP Supply Voltage — 2.5 V, -125 mV, +250 mV
VREFDQ — On-die internal adjustable generation
Refresh Structure — 8192-cycle refresh
Refresh Window — 64 ms at -40C to 85C; 32 ms at >85C to 95C; 16 ms at >95C
ECCN — EAR99
无卤 — Compliant
Country of Origin — China

数据手册与资源

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