MT40A512M8RH-083E vs H5AN4G8NBJR-PBC Comparación
Comparación detallada lado a lado de MT40A512M8RH-083E por Micron Technology y H5AN4G8NBJR-PBC por SK hynix. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | MT40A512M8RH-083E | H5AN4G8NBJR-PBC |
|---|---|---|
| Marca | Micron Technology | SK hynix |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $3,30 | $2,20 |
| Tipo de memoria | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | — |
| Organización de memoria | 512M x 8 | 512M x 8 |
| Industry Speed Grade | DDR4-2400 | — |
| Clock Rate | 1.2 GHz | — |
| Internal Banks | 8 banks (2 groups of 4) | — |
| Prefetch | 8n-bit | — |
| Refresh | 64 ms, 8192-cycle refresh (to 95C) | 8n prefetch, standard/auto refresh per DDR4 JEDEC |
| VDD / VDDQ | 1.2 V +/-60 mV | — |
| VPP | 2.5 V, -125 mV/+250 mV | — |
| I/O Structure | 1.2 V pseudo open-drain | — |
| VREFDQ | On-die internal, adjustable generation | — |
| Temperatura de funcionamiento | 0C to +95C | — |
| Encapsulado | 78-ball FBGA (9 x 10.5 mm) | 78-ball FBGA |
| FBGA Code | D9TGG | — |
| Marking Code | D9TGG | — |
| Data Strobe Preamble | Programmable | — |
| Estado RoHS | Compliant | — |
| Latencia CAS | [DATA_NEEDED: CAS latency per speed bin table] | — |
| Memory Density | — | 4 Gbit |
| Tipo de interfaz | — | Parallel, JEDEC DDR4 |
| Supply Voltage VDD | — | 1.2 V |
| Supply Voltage VDDQ | — | 1.2 V |
| Speed Grade | — | PBC |
| Clock Frequency | — | [DATA_NEEDED: Clock Frequency] |
| CAS Latency (CL) | — | [DATA_NEEDED: CAS Latency] |
| Tipo de montaje | — | Surface Mount |
| Normal Operating Case Temperature | — | 0C to 85C |
| Extended Temperature Range | — | up to 95C case (with increased refresh) |
| Lead Free | — | Yes |
| Sin halógenos | — | Yes |