MW4IC001MR4 vs MW4IC001NR4 Comparación
Comparación detallada lado a lado de MW4IC001MR4 por NXP Semiconductors y MW4IC001NR4 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
NXP Semiconductors
MW4IC001MR4 - 900 mW, 800-2170 MHz LDMOS Wideband RF PA | NXP
MW4IC001MR4 ⚠ Última compraNXP Semiconductors
MW4IC001NR4 - 900mW 800-2170MHz W-CDMA RF LDMOS Amplifier | NXP
MW4IC001NR4 ⚠ Última compraComparación de especificaciones
| Parámetro | MW4IC001MR4 | MW4IC001NR4 |
|---|---|---|
| Marca | NXP Semiconductors | NXP Semiconductors |
| Categoría | RF Amplifiers | RF Amplifiers |
| Estado del ciclo de vida | Última compra | Última compra |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $10,75 | $7,95 |
| Technology | LDMOS (Laterally Diffused MOS) | RF LDMOS (Laterally Diffused MOSFET) |
| Frequency Range | 800 MHz to 2170 MHz | 800 MHz to 2170 MHz |
| Output Power (CW, P1dB typical) | 900 mW (29.5 dBm) | — |
| Power Gain at 2170 MHz | 13 dB | — |
| Drain Efficiency at 2170 MHz | 38 % | — |
| Drain Supply Voltage (VDD) | 28 V (typ) | — |
| Quiescent Current (IDQ) | 12 mA | — |
| Input / Output Impedance | 50 ohm (nominal) | Internally matched to 50 ohm |
| Supported Air Interfaces | GSM, TDMA, CDMA, EDGE, W-CDMA | — |
| Operating Case Temperature | -40C to +85C | — |
| Encapsulado | PLD-1.5 (RF1649-4, over-molded plastic) | — |
| Tipo de montaje | Surface Mount | — |
| Terminal Finish | Tin/Lead (Sn/Pb) | — |
| Estado RoHS | Non-compliant (SnPb lead finish; replaced by MW4IC001NR4 for lead-free) | Compliant (N-suffix = lead-free transition marking) |
| Application Role | Analog predistortion (DPD) reference amplifier | — |
| Manufacturer | — | NXP Semiconductors (originally Freescale Semiconductor) |
| Part Number | — | MW4IC001NR4 |
| RF Type | — | Cellular, CDMA, EDGE, GSM, TDMA, W-CDMA |
| Función | — | Wideband integrated power amplifier / APD feedback amplifier |
| Gain (small-signal) | — | 13 dB |
| Output Power (P1dB) | — | 900 mW (approx. 29.5 dBm) |
| Tensión de alimentación | — | 26 V (typ.) / 28 V (rated) |
| Supply Current (quiescent) | — | 12 mA (typ.) |
| Encapsulado / Carcasa | — | PLD-1.5 (over-molded plastic flange-mount) |
| Packaging | — | Tape & Reel (R4 suffix = 500 pcs/reel standard) |
| Temperatura de funcionamiento | — | -40 C to +85 C ambient |
| Termination Finish | — | Lead-free (matte tin) |