MW4IC001MR4 vs MW4IC001NR4 Vergleich
Detaillierter Direktvergleich von MW4IC001MR4 von NXP Semiconductors und MW4IC001NR4 von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
NXP Semiconductors
MW4IC001MR4 - 900 mW, 800-2170 MHz LDMOS Wideband RF PA | NXP
MW4IC001MR4 ⚠ Letzte BestellmöglichkeitNXP Semiconductors
MW4IC001NR4 - 900mW 800-2170MHz W-CDMA RF LDMOS Amplifier | NXP
MW4IC001NR4 ⚠ Letzte BestellmöglichkeitSpezifikationsvergleich
| Parameter | MW4IC001MR4 | MW4IC001NR4 |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | RF Amplifiers | RF Amplifiers |
| Lebenszyklusstatus | Letzte Kaufgelegenheit | Letzte Kaufgelegenheit |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $10,75 | $7,95 |
| Technology | LDMOS (Laterally Diffused MOS) | RF LDMOS (Laterally Diffused MOSFET) |
| Frequency Range | 800 MHz to 2170 MHz | 800 MHz to 2170 MHz |
| Output Power (CW, P1dB typical) | 900 mW (29.5 dBm) | — |
| Power Gain at 2170 MHz | 13 dB | — |
| Drain Efficiency at 2170 MHz | 38 % | — |
| Drain Supply Voltage (VDD) | 28 V (typ) | — |
| Quiescent Current (IDQ) | 12 mA | — |
| Input / Output Impedance | 50 ohm (nominal) | Internally matched to 50 ohm |
| Supported Air Interfaces | GSM, TDMA, CDMA, EDGE, W-CDMA | — |
| Operating Case Temperature | -40C to +85C | — |
| Gehäuse | PLD-1.5 (RF1649-4, over-molded plastic) | — |
| Montageart | Surface Mount | — |
| Terminal Finish | Tin/Lead (Sn/Pb) | — |
| RoHS-Status | Non-compliant (SnPb lead finish; replaced by MW4IC001NR4 for lead-free) | Compliant (N-suffix = lead-free transition marking) |
| Application Role | Analog predistortion (DPD) reference amplifier | — |
| Manufacturer | — | NXP Semiconductors (originally Freescale Semiconductor) |
| Part Number | — | MW4IC001NR4 |
| RF Type | — | Cellular, CDMA, EDGE, GSM, TDMA, W-CDMA |
| Funktion | — | Wideband integrated power amplifier / APD feedback amplifier |
| Gain (small-signal) | — | 13 dB |
| Output Power (P1dB) | — | 900 mW (approx. 29.5 dBm) |
| Versorgungsspannung | — | 26 V (typ.) / 28 V (rated) |
| Supply Current (quiescent) | — | 12 mA (typ.) |
| Gehäuse / Bauform | — | PLD-1.5 (over-molded plastic flange-mount) |
| Packaging | — | Tape & Reel (R4 suffix = 500 pcs/reel standard) |
| Betriebstemperatur | — | -40 C to +85 C ambient |
| Termination Finish | — | Lead-free (matte tin) |