MW7IC2220GNR1 vs MW7IC2220NBR1 Comparación

Comparación detallada lado a lado de MW7IC2220GNR1 por NXP Semiconductors y MW7IC2220NBR1 por NXP Semiconductors. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.

NXP Semiconductors
MW7IC2220GNR1 MW7IC2220GNR1 - 2W W-CDMA RF LDMOS PA 2.11-2.17 GHz | NXP

MW7IC2220GNR1 - 2W W-CDMA RF LDMOS PA 2.11-2.17 GHz | NXP

MW7IC2220GNR1 ✓ Activo
NXP Semiconductors
MW7IC2220NBR1 MW7IC2220NBR1 - 2W W-CDMA RF Power Amplifier 2.11-2.17 GHz | NXP

MW7IC2220NBR1 - 2W W-CDMA RF Power Amplifier 2.11-2.17 GHz | NXP

MW7IC2220NBR1 ✓ Activo

Comparación de especificaciones

Parámetro MW7IC2220GNR1 MW7IC2220NBR1
Marca NXP Semiconductors NXP Semiconductors
Categoría RF Amplifiers RF Amplifiers
Estado del ciclo de vida Activo Activo
Estado del stock In Stock In Stock
Precio unitario (USD) $25,10 $21,50
Technology RF LDMOS, two-stage integrated RF LDMOS (Laterally Diffused MOSFET)
Frequency Range (Usable) 2000 MHz to 2200 MHz —
Target Band W-CDMA 2110-2170 MHz —
Output Power (Avg, W-CDMA) 2 W Avg. —
Operating Voltage (VDD) 28 V nominal (24 V to 32 V range) —
Gain (Typ, 2.17 GHz) 31 dB —
Quiescent Current Stage 1 (IDQ1) 80 mA 80 mA
Quiescent Current Stage 2 (IDQ2) 300 mA 300 mA
Test Signal Single-Carrier W-CDMA, PAR = 7.5 dB @ 0.01% CCDF Single-Carrier W-CDMA, IQ Magnitude Clipping, PAR = 7.5 dB
ACPR Measurement 3.84 MHz channel, +/-5 MHz offset 3.84 MHz channel bandwidth at +/-5 MHz offset
Encapsulado TO-270 WBL-16 Gull-Wing (16-pin plastic overmold) —
Tipo de montaje Surface Mount (Gull-Wing leads) Surface Mount (flange/over-molded)
Input/Output Matching On-chip 50 ohm matching —
Lead-Free / RoHS RoHS compliant per NXP product page —
Operating Case Temperature [DATA_NEEDED: operating case temperature] —
Storage Temperature [DATA_NEEDED: storage temperature] —
Thermal Resistance (RthJC) [DATA_NEEDED: theta_JC] —
Función — W-CDMA Wideband Integrated Power Amplifier
Frequency Range — 2000 MHz to 2200 MHz (usable), 2110-2170 MHz (W-CDMA band)
Operating Frequency (typical) — 2167.5 MHz
Average Output Power — 2 W (33 dBm)
Drain Supply Voltage (VDD) — 28 V (24 V to 32 V operating range)
Small-Signal Gain — 31 dB (typical at 2.17 GHz)
Package Type — TO-272WB-16 (over-molded plastic)
Input Matching — On-chip (50 ohm nominal)
Output Matching — On-chip (50 ohm nominal)
Characteristic Impedance — 50 ohm
Maximum Operating Temperature — 150 C
Modulation Support — W-CDMA, TD-SCDMA, LTE, multi-carrier

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