NE5532APSRE4 vs AD823ARZ Comparación
Comparación detallada lado a lado de NE5532APSRE4 por Texas Instruments y AD823ARZ por Analog Devices. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Texas Instruments
NE5532APSRE4 - Dual 10MHz Low-Noise Op Amp | Texas Instruments
NE5532APSRE4 ✓ Activo
Comparación de especificaciones
| Parámetro | NE5532APSRE4 | AD823ARZ |
|---|---|---|
| Marca | Texas Instruments | Analog Devices |
| Categoría | Amplifier ICs | Amplifier ICs |
| Estado del ciclo de vida | Activo | Activo |
| Number of Amplifier Circuits | 2 circuits | — |
| Amplifier Type | General-purpose dual operational amplifier | J-FET |
| Unity-Gain Bandwidth | 10 MHz typical | — |
| Equivalent Input Noise Voltage | 5 nV/√Hz typical at 1 kHz | — |
| Common-Mode Rejection Ratio | 100 dB typical | — |
| High DC Voltage Gain | 100 V/mV typical | — |
| Slew Rate | 9 V/µs typical | 25 V/µs |
| Input Bias Current | 1 µA | — |
| Tensión de alimentación | 15 V | — |
| Minimum Total Supply Voltage | ±5 V | — |
| Maximum Total Supply Voltage | ±15 V | — |
| Typical Total Supply Voltage | ±9 V or ±12 V | — |
| Rango de temperatura de funcionamiento | 0°C to 70°C | — |
| Encapsulado | 8-SOIC, 5.30 mm width | — |
| Número de pines | 8 pins | — |
| Tipo de montaje | Surface mount | Surface Mount |
| Packaging | Tape and reel | — |
| Estado RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| REACH Status | [DATA_NEEDED: REACH status] | — |
| AEC-Q100 Qualification | [DATA_NEEDED: AEC-Q100 qualification status] | — |
| Number of Circuits | — | 2 |
| Tipo de salida | — | Rail-to-Rail |
| Gain Bandwidth Product | — | 16 MHz |
| Current - Input Bias | — | 10 pA |
| Voltage - Input Offset | — | 0.5 mV |
| Current - Supply | — | 2.6 mA (x2 channels) |
| Current - Output / Channel | — | 15 mA |
| Voltage - Supply, Single/Dual (±) | — | 3 V ~ 36 V, ±1.5 V ~ ±18 V |
| Temperatura de funcionamiento | — | -40°C ~ +85°C |
| Encapsulado / Carcasa | — | 8-SOIC |
| Capacitive Load Drive | — | 500 pF, G = +1 |