NOPB vs CMUDM8004-TR-PBFREE Comparación
Comparación detallada lado a lado de NOPB por Texas Instruments y CMUDM8004-TR-PBFREE por Central Semiconductor. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Central Semiconductor
CMUDM8004-TR-PBFREE - 30V 450mA P-Channel MOSFET | Central Semiconductor
CMUDM8004-TR-PBFREE ✓ ActivoComparación de especificaciones
| Parámetro | NOPB | CMUDM8004-TR-PBFREE |
|---|---|---|
| Marca | Texas Instruments | Central Semiconductor |
| Categoría | Logic ICs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,00 | $0,08 |
| Suffix Type | Part-number ordering suffix (not a standalone IC) | — |
| Meaning | No Lead / No Pb (lead-free packaging) | — |
| Origin | National Semiconductor ordering system (inherited by TI) | — |
| Lead Finish | Matte tin (Sn) or Sn-Ag-Cu (lead-free) | — |
| RoHS Compliance | Yes - compliant with EU Directive 2011/65/EU | — |
| REACH Compliance | Compliant (per TI declaration) | — |
| Peak Reflow Temperature | 260 C (JEDEC J-STD-020 lead-free profile) | — |
| MSL Classification | Per JEDEC J-STD-033 (device-dependent, typically MSL 2 or 3) | — |
| Tipo de montaje | Surface Mount (packaging dependent on base MPN) | Surface Mount |
| Temperatura de funcionamiento | Inherits base MPN specification | — |
| Equivalent Legacy Suffixes | /PBFREE, /LEADFREE, /LF (vendor-specific) | — |
| Functional Equivalence | Identical die and electrical specs to non-NOPB variant | — |
| Backwards Compatibility | Compatible with Sn-Pb and lead-free assembly lines when reflow profiled correctly | — |
| Document Reference | TI Packaging Terminology Guide (ti.com/design-development/packaging) | — |
| Country of Origin | Multiple (per base MPN country of assembly) | — |
| Tipo de transistor | — | P-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage (Vdss) | — | 30 V |
| Continuous Drain Current (Id) at Ta | — | 450 mA |
| Power Dissipation (Pd) at Ta | — | 250 mW |
| Encapsulado | — | SOT-523 |
| Configuration | — | Single FET |
| Gate Drive | — | Low threshold voltage, logic-compatible |
| Drain-Source On-Resistance (Rds on) | — | [DATA_NEEDED: Rds(on)] |
| Gate-Source Threshold Voltage (Vgs th) | — | [DATA_NEEDED: Vgs(th)] |
| Gate-Source Voltage (Vgs) Max | — | [DATA_NEEDED: Vgs max] |
| Rango de temperatura de funcionamiento | — | [DATA_NEEDED: operating temperature range] |
| Lead Free | — | Yes (PBFREE) |
| Estado RoHS | — | Compliant |
| Packaging | — | Tape and Reel (TR) |
| Typical Applications | — | Load/Power Switches, Power Supply Converter Circuits |
| Technology | — | Silicon MOSFET |