NOPB vs CMUDM8004-TR-PBFREE Comparaison
Comparaison détaillée côte à côte de NOPB par Texas Instruments et CMUDM8004-TR-PBFREE par Central Semiconductor. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Central Semiconductor
CMUDM8004-TR-PBFREE - 30V 450mA P-Channel MOSFET | Central Semiconductor
CMUDM8004-TR-PBFREE ✓ ActifComparaison des spécifications
| Paramètre | NOPB | CMUDM8004-TR-PBFREE |
|---|---|---|
| Marque | Texas Instruments | Central Semiconductor |
| Catégorie | Logic ICs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,00 | $0,08 |
| Suffix Type | Part-number ordering suffix (not a standalone IC) | — |
| Meaning | No Lead / No Pb (lead-free packaging) | — |
| Origin | National Semiconductor ordering system (inherited by TI) | — |
| Lead Finish | Matte tin (Sn) or Sn-Ag-Cu (lead-free) | — |
| RoHS Compliance | Yes - compliant with EU Directive 2011/65/EU | — |
| REACH Compliance | Compliant (per TI declaration) | — |
| Peak Reflow Temperature | 260 C (JEDEC J-STD-020 lead-free profile) | — |
| MSL Classification | Per JEDEC J-STD-033 (device-dependent, typically MSL 2 or 3) | — |
| Type de montage | Surface Mount (packaging dependent on base MPN) | Surface Mount |
| Température de fonctionnement | Inherits base MPN specification | — |
| Equivalent Legacy Suffixes | /PBFREE, /LEADFREE, /LF (vendor-specific) | — |
| Functional Equivalence | Identical die and electrical specs to non-NOPB variant | — |
| Backwards Compatibility | Compatible with Sn-Pb and lead-free assembly lines when reflow profiled correctly | — |
| Document Reference | TI Packaging Terminology Guide (ti.com/design-development/packaging) | — |
| Country of Origin | Multiple (per base MPN country of assembly) | — |
| Type de transistor | — | P-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage (Vdss) | — | 30 V |
| Continuous Drain Current (Id) at Ta | — | 450 mA |
| Power Dissipation (Pd) at Ta | — | 250 mW |
| Boîtier | — | SOT-523 |
| Configuration | — | Single FET |
| Gate Drive | — | Low threshold voltage, logic-compatible |
| Drain-Source On-Resistance (Rds on) | — | [DATA_NEEDED: Rds(on)] |
| Gate-Source Threshold Voltage (Vgs th) | — | [DATA_NEEDED: Vgs(th)] |
| Gate-Source Voltage (Vgs) Max | — | [DATA_NEEDED: Vgs max] |
| Plage de température de fonctionnement | — | [DATA_NEEDED: operating temperature range] |
| Lead Free | — | Yes (PBFREE) |
| Statut RoHS | — | Compliant |
| Packaging | — | Tape and Reel (TR) |
| Typical Applications | — | Load/Power Switches, Power Supply Converter Circuits |
| Technology | — | Silicon MOSFET |