NTHL040N120SC1 vs NVHL072N120SC1 Comparación

Comparación detallada lado a lado de NTHL040N120SC1 por onsemi y NVHL072N120SC1 por onsemi. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.

Comparación de especificaciones

Parámetro NTHL040N120SC1 NVHL072N120SC1
Marca onsemi onsemi
Categoría MOSFETs MOSFETs
Estado del ciclo de vida Activo Activo
Estado del stock In Stock In Stock
Precio unitario (USD) $5,47 $5,45
Technology Silicon Carbide (SiC), EliteSiC M1 M1 planar SiC
Channel Type N-Channel —
VDS (Drain-Source Voltage) 1200 V —
RDS(on) (Max) 40 mΩ —
Continuous Drain Current (Tc) 60 A [DATA_NEEDED: ID at Tc for NVHL072N120SC1]
Power Dissipation (Tc) 348 W [DATA_NEEDED: PD at Tc for NVHL072N120SC1]
Avalanche Energy EAS 613 mJ (Tj = 25C, L = 1 mH, IAS = 35 A) —
Encapsulado TO-247-3L (Through Hole) TO-247-3 (through hole)
Tipo de montaje Through Hole Through Hole
Configuration Single FET —
Gate Charge [DATA_NEEDED: total gate charge Qg] —
Input Capacitance Ciss [DATA_NEEDED: Ciss] —
Junction Temperature Range [DATA_NEEDED: Tj range] —
Thermal Resistance RthJC [DATA_NEEDED: RthJC] —
Estado RoHS Compliant Compliant
Moisture Sensitivity Level [DATA_NEEDED: MSL] —
Device Type — N-Channel Silicon Carbide (SiC) MOSFET, EliteSiC
Drain-Source Voltage (VDS) — 1200 V
RDS(on) Max — [DATA_NEEDED: RDS(on) max for NVHL072N120SC1]
Total Gate Charge (QG tot) — [DATA_NEEDED: QG for NVHL072N120SC1] (family typ. 56 nC for 80 mohm grade)
Effective Output Capacitance (Coss) — [DATA_NEEDED: Coss for NVHL072N120SC1] (family typ. 80 pF for 80 mohm grade)
100% UIL Tested — Yes
AEC-Q101 — Qualified
PPAP — Capable
Halide Free — Yes

Hojas de datos y recursos

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