NTHL040N120SC1 vs NVHL072N120SC1 Comparaison
Comparaison détaillée côte à côte de NTHL040N120SC1 par onsemi et NVHL072N120SC1 par onsemi. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | NTHL040N120SC1 | NVHL072N120SC1 |
|---|---|---|
| Marque | onsemi | onsemi |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $5,47 | $5,45 |
| Technology | Silicon Carbide (SiC), EliteSiC M1 | M1 planar SiC |
| Channel Type | N-Channel | — |
| VDS (Drain-Source Voltage) | 1200 V | — |
| RDS(on) (Max) | 40 mΩ | — |
| Continuous Drain Current (Tc) | 60 A | [DATA_NEEDED: ID at Tc for NVHL072N120SC1] |
| Power Dissipation (Tc) | 348 W | [DATA_NEEDED: PD at Tc for NVHL072N120SC1] |
| Avalanche Energy EAS | 613 mJ (Tj = 25C, L = 1 mH, IAS = 35 A) | — |
| Boîtier | TO-247-3L (Through Hole) | TO-247-3 (through hole) |
| Type de montage | Through Hole | Through Hole |
| Configuration | Single FET | — |
| Gate Charge | [DATA_NEEDED: total gate charge Qg] | — |
| Input Capacitance Ciss | [DATA_NEEDED: Ciss] | — |
| Junction Temperature Range | [DATA_NEEDED: Tj range] | — |
| Thermal Resistance RthJC | [DATA_NEEDED: RthJC] | — |
| Statut RoHS | Compliant | Compliant |
| Moisture Sensitivity Level | [DATA_NEEDED: MSL] | — |
| Device Type | — | N-Channel Silicon Carbide (SiC) MOSFET, EliteSiC |
| Drain-Source Voltage (VDS) | — | 1200 V |
| RDS(on) Max | — | [DATA_NEEDED: RDS(on) max for NVHL072N120SC1] |
| Total Gate Charge (QG tot) | — | [DATA_NEEDED: QG for NVHL072N120SC1] (family typ. 56 nC for 80 mohm grade) |
| Effective Output Capacitance (Coss) | — | [DATA_NEEDED: Coss for NVHL072N120SC1] (family typ. 80 pF for 80 mohm grade) |
| 100% UIL Tested | — | Yes |
| AEC-Q101 | — | Qualified |
| PPAP | — | Capable |
| Halide Free | — | Yes |