RTAX2000DL-CQ352B vs RTAX2000D-CQ352B Comparación
Comparación detallada lado a lado de RTAX2000DL-CQ352B por Microchip Technology y RTAX2000D-CQ352B por Microsemi. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Microchip Technology
RTAX2000DL-CQ352B - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000DL-CQ352B ✓ ActivoMicrosemi
RTAX2000D-CQ352B - 2M-Gate Rad-Tolerant FPGA, CQFP-352 | Microchip
RTAX2000D-CQ352B ✓ ActivoComparación de especificaciones
| Parámetro | RTAX2000DL-CQ352B | RTAX2000D-CQ352B |
|---|---|---|
| Marca | Microchip Technology | Microsemi |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,00 | $3.100,00 |
| Equivalent System Gates | 2,000,000 | 2000000 |
| Logic Cells | [DATA_NEEDED: Logic Cells] | 29568 |
| CLBs | 19,712 | 19712 |
| DSP Mathblocks | Up to 120 | — |
| DSP MAC Performance | 125 MHz, 18-bit x 18-bit multiply-accumulate | — |
| Embedded Memory | Up to 540 kbits with optional EDAC protection | Embedded SRAM with built-in FIFO control logic |
| Programming Technology | Nonvolatile antifuse | — |
| Total Ionizing Dose (Functional) | 300 krad (Si) | — |
| Total Ionizing Dose (Parameter) | 200 krad (Si) | — |
| Core Supply Voltage (Nominal) | 1.5 V | — |
| Core Supply Voltage Range | 1.425 V to 1.575 V | — |
| Encapsulado | 352-terminal ceramic CQFP, metal-sealed | CQFP-352 ceramic quad flat pack |
| Terminal Pitch | 0.500 mm | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Temperatura de funcionamiento | [DATA_NEEDED: Operating Temperature Range] | [DATA_NEEDED: Operating Temperature Range] |
| Configuration | Live at power-up, no external boot PROM required | — |
| Application Domain | Space flight systems | Space-flight systems |
| Family | — | RTAX-S/SL and RTAX-DSP Radiation-Tolerant FPGAs |
| Core Supply Voltage | — | 1.5 V nominal (1.425 V to 1.575 V) |
| Process Technology | — | CMOS antifuse |
| Configuration Type | — | One-time programmable antifuse, live at power-up |
| Clocking Features | — | Segmentable clocks, chip-wide highway routing |
| Arithmetic Support | — | Carry logic |
| Screening / Speed Grade | — | B (burn-in screening); D suffix = tighter ICCA limits at 125C final test |
| Radiation Tolerance | — | Radiation-tolerant (TID/SEE per family datasheet) |
| Estado RoHS | — | [DATA_NEEDED: RoHS Status] |
| I/O Supply Voltage | — | [DATA_NEEDED: I/O Bank Supply Voltage] |
| Maximum User I/O | — | [DATA_NEEDED: Maximum User I/O Count] |