RTAX2000DL-CQ352B vs RTAX2000D-CQ352B Comparaison
Comparaison détaillée côte à côte de RTAX2000DL-CQ352B par Microchip Technology et RTAX2000D-CQ352B par Microsemi. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Microchip Technology
RTAX2000DL-CQ352B - 2M-Gate Rad-Tolerant FPGA | Microchip
RTAX2000DL-CQ352B ✓ ActifMicrosemi
RTAX2000D-CQ352B - 2M-Gate Rad-Tolerant FPGA, CQFP-352 | Microchip
RTAX2000D-CQ352B ✓ ActifComparaison des spécifications
| Paramètre | RTAX2000DL-CQ352B | RTAX2000D-CQ352B |
|---|---|---|
| Marque | Microchip Technology | Microsemi |
| Catégorie | FPGA & CPLD | FPGA & CPLD |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,00 | $3 100,00 |
| Equivalent System Gates | 2,000,000 | 2000000 |
| Logic Cells | [DATA_NEEDED: Logic Cells] | 29568 |
| CLBs | 19,712 | 19712 |
| DSP Mathblocks | Up to 120 | — |
| DSP MAC Performance | 125 MHz, 18-bit x 18-bit multiply-accumulate | — |
| Embedded Memory | Up to 540 kbits with optional EDAC protection | Embedded SRAM with built-in FIFO control logic |
| Programming Technology | Nonvolatile antifuse | — |
| Total Ionizing Dose (Functional) | 300 krad (Si) | — |
| Total Ionizing Dose (Parameter) | 200 krad (Si) | — |
| Core Supply Voltage (Nominal) | 1.5 V | — |
| Core Supply Voltage Range | 1.425 V to 1.575 V | — |
| Boîtier | 352-terminal ceramic CQFP, metal-sealed | CQFP-352 ceramic quad flat pack |
| Terminal Pitch | 0.500 mm | — |
| Type de montage | Surface Mount | Surface Mount |
| Température de fonctionnement | [DATA_NEEDED: Operating Temperature Range] | [DATA_NEEDED: Operating Temperature Range] |
| Configuration | Live at power-up, no external boot PROM required | — |
| Application Domain | Space flight systems | Space-flight systems |
| Family | — | RTAX-S/SL and RTAX-DSP Radiation-Tolerant FPGAs |
| Core Supply Voltage | — | 1.5 V nominal (1.425 V to 1.575 V) |
| Process Technology | — | CMOS antifuse |
| Configuration Type | — | One-time programmable antifuse, live at power-up |
| Clocking Features | — | Segmentable clocks, chip-wide highway routing |
| Arithmetic Support | — | Carry logic |
| Screening / Speed Grade | — | B (burn-in screening); D suffix = tighter ICCA limits at 125C final test |
| Radiation Tolerance | — | Radiation-tolerant (TID/SEE per family datasheet) |
| Statut RoHS | — | [DATA_NEEDED: RoHS Status] |
| I/O Supply Voltage | — | [DATA_NEEDED: I/O Bank Supply Voltage] |
| Maximum User I/O | — | [DATA_NEEDED: Maximum User I/O Count] |