RTAX2000SL-1CGS624E vs RTAX2000SL-1CGS624V Comparación
Comparación detallada lado a lado de RTAX2000SL-1CGS624E por Microchip Technology y RTAX2000SL-1CGS624V por Microsemi. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Microchip Technology
RTAX2000SL-1CGS624E - 2M-Gate Rad-Tolerant FPGA CGA624 | Microchip
RTAX2000SL-1CGS624E ✓ ActivoMicrosemi
RTAX2000SL-1CGS624V - 2M-Gate Rad-Tolerant FPGA | Actel/Microchip
RTAX2000SL-1CGS624V ✓ ActivoComparación de especificaciones
| Parámetro | RTAX2000SL-1CGS624E | RTAX2000SL-1CGS624V |
|---|---|---|
| Marca | Microchip Technology | Microsemi |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $10.750,00 | $0,00 |
| Family | RTAX-S/SL Radiation-Tolerant FPGA | — |
| Equivalent System Gates | 2000000 | 2000000 |
| Additional ASIC Gates | 250000 | — |
| Configurable Logic Blocks (CLBs) | 21504 | — |
| Technology | CMOS, 0.15 um | Digital CMOS, antifuse nonvolatile |
| Core Supply Voltage | 1.5 V | [DATA_NEEDED: core supply voltage] |
| Maximum Combinatorial Performance | 649 MHz | — |
| Speed Grade | -1 | -1 |
| Encapsulado | CBGA624 / CGA-624 Ceramic Column Grid Array | 624-ball ceramic CGA (CGS624) |
| Package Material | Ceramic | — |
| Programming Technology | Anti-fuse, one-time programmable, live at power-up | — |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | Up to 540 kbits with optional EDAC |
| Radiation Tolerance | Radiation-tolerant (space-flight qualified family) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | — |
| Estado RoHS | [DATA_NEEDED: RoHS status] | — |
| Number of I/Os | [DATA_NEEDED: number of user I/Os] | — |
| Logic Cells (CLBs) | — | 21504 |
| User I/Os (max, package dependent) | — | Up to 684 |
| Total Ionizing Dose (TID) | — | 300 krad (functional), 200 krad (parametric) |
| SEU Rate | — | Less than 1E-10 errors per bit-day |
| Quality / Screening Suffix | — | S (space flow), V suffix qualification level |
| I/O Supply Voltage | — | [DATA_NEEDED: I/O supply voltage] |
| Configuration | — | One-time programmable (OTP), live at power-up, single chip |
| Embedded SRAM Features | — | Built-in FIFO control logic |
| Clocking | — | Segmentable clocks, chip-wide highway routing |
| Temperatura de funcionamiento | — | [DATA_NEEDED: operating temperature range] |