RTAX2000SL-1CGS624E vs RTAX2000SL-1CGS624V Comparaison
Comparaison détaillée côte à côte de RTAX2000SL-1CGS624E par Microchip Technology et RTAX2000SL-1CGS624V par Microsemi. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Microchip Technology
RTAX2000SL-1CGS624E - 2M-Gate Rad-Tolerant FPGA CGA624 | Microchip
RTAX2000SL-1CGS624E ✓ ActifMicrosemi
RTAX2000SL-1CGS624V - 2M-Gate Rad-Tolerant FPGA | Actel/Microchip
RTAX2000SL-1CGS624V ✓ ActifComparaison des spécifications
| Paramètre | RTAX2000SL-1CGS624E | RTAX2000SL-1CGS624V |
|---|---|---|
| Marque | Microchip Technology | Microsemi |
| Catégorie | FPGA & CPLD | FPGA & CPLD |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $10 750,00 | $0,00 |
| Family | RTAX-S/SL Radiation-Tolerant FPGA | — |
| Equivalent System Gates | 2000000 | 2000000 |
| Additional ASIC Gates | 250000 | — |
| Configurable Logic Blocks (CLBs) | 21504 | — |
| Technology | CMOS, 0.15 um | Digital CMOS, antifuse nonvolatile |
| Core Supply Voltage | 1.5 V | [DATA_NEEDED: core supply voltage] |
| Maximum Combinatorial Performance | 649 MHz | — |
| Speed Grade | -1 | -1 |
| Boîtier | CBGA624 / CGA-624 Ceramic Column Grid Array | 624-ball ceramic CGA (CGS624) |
| Package Material | Ceramic | — |
| Programming Technology | Anti-fuse, one-time programmable, live at power-up | — |
| Embedded Memory | Embedded SRAM with built-in FIFO control logic | Up to 540 kbits with optional EDAC |
| Radiation Tolerance | Radiation-tolerant (space-flight qualified family) | — |
| Type de montage | Surface Mount | Surface Mount |
| Plage de température de fonctionnement | [DATA_NEEDED: operating temperature range] | — |
| Statut RoHS | [DATA_NEEDED: RoHS status] | — |
| Number of I/Os | [DATA_NEEDED: number of user I/Os] | — |
| Logic Cells (CLBs) | — | 21504 |
| User I/Os (max, package dependent) | — | Up to 684 |
| Total Ionizing Dose (TID) | — | 300 krad (functional), 200 krad (parametric) |
| SEU Rate | — | Less than 1E-10 errors per bit-day |
| Quality / Screening Suffix | — | S (space flow), V suffix qualification level |
| I/O Supply Voltage | — | [DATA_NEEDED: I/O supply voltage] |
| Configuration | — | One-time programmable (OTP), live at power-up, single chip |
| Embedded SRAM Features | — | Built-in FIFO control logic |
| Clocking | — | Segmentable clocks, chip-wide highway routing |
| Température de fonctionnement | — | [DATA_NEEDED: operating temperature range] |