RTAX2000SL-CGS624E vs RTAX2000SL-1CGS624V Comparación

Comparación detallada lado a lado de RTAX2000SL-CGS624E por Microchip Technology y RTAX2000SL-1CGS624V por Microsemi. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.

Microchip Technology
RTAX2000SL-CGS624E RTAX2000SL-CGS624E - 2M-Gate Rad-Tolerant FPGA CGA-624 | Microchip

RTAX2000SL-CGS624E - 2M-Gate Rad-Tolerant FPGA CGA-624 | Microchip

RTAX2000SL-CGS624E ✓ Activo

Comparación de especificaciones

Parámetro RTAX2000SL-CGS624E RTAX2000SL-1CGS624V
Marca Microchip Technology Microsemi
Categoría FPGA & CPLD FPGA & CPLD
Estado del ciclo de vida Activo Activo
Estado del stock In Stock In Stock
Precio unitario (USD) $0,00 $0,00
Logic Elements / CLBs 21504 CLBs —
Equivalent System Gates 2000000 gates 2000000
Additional ASIC Gates 250000 gates —
Family RTAX-S/SL Radiation-Tolerant FPGAs —
Technology CMOS, anti-fuse OTP Digital CMOS, antifuse nonvolatile
Radiation Tolerance Radiation-tolerant (space-flight grade) —
Encapsulado CBGA624 / CGA-624 ceramic column grid array 624-ball ceramic CGA (CGS624)
Tipo de montaje Surface Mount Surface Mount
Configuration Live at power-up, one-time programmable One-time programmable (OTP), live at power-up, single chip
Embedded Memory Embedded SRAM with built-in FIFO control logic Up to 540 kbits with optional EDAC
Clocking Segmentable clocks, chip-wide highway routing Segmentable clocks, chip-wide highway routing
Arithmetic Support Carry logic —
Temperatura de funcionamiento [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Tensión de alimentación [DATA_NEEDED: core supply voltage] —
Maximum I/O [DATA_NEEDED: maximum user I/O count for CG624 package] —
Estado RoHS [DATA_NEEDED: RoHS status] —
Qualification [DATA_NEEDED: QML qualification level] —
Logic Cells (CLBs) — 21504
User I/Os (max, package dependent) — Up to 684
Total Ionizing Dose (TID) — 300 krad (functional), 200 krad (parametric)
SEU Rate — Less than 1E-10 errors per bit-day
Speed Grade — -1
Quality / Screening Suffix — S (space flow), V suffix qualification level
Core Supply Voltage — [DATA_NEEDED: core supply voltage]
I/O Supply Voltage — [DATA_NEEDED: I/O supply voltage]
Embedded SRAM Features — Built-in FIFO control logic

Hojas de datos y recursos

Examinar todos los productos Crear BOM Solicitar cotización