RTAX2000SL-CGS624E vs RTAX2000SL-1CGS624V Comparaison

Comparaison détaillée côte à côte de RTAX2000SL-CGS624E par Microchip Technology et RTAX2000SL-1CGS624V par Microsemi. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.

Microchip Technology
RTAX2000SL-CGS624E RTAX2000SL-CGS624E - 2M-Gate Rad-Tolerant FPGA CGA-624 | Microchip

RTAX2000SL-CGS624E - 2M-Gate Rad-Tolerant FPGA CGA-624 | Microchip

RTAX2000SL-CGS624E ✓ Actif

Comparaison des spécifications

Paramètre RTAX2000SL-CGS624E RTAX2000SL-1CGS624V
Marque Microchip Technology Microsemi
Catégorie FPGA & CPLD FPGA & CPLD
Statut du cycle de vie Actif Actif
Statut du stock In Stock In Stock
Prix unitaire (USD) $0,00 $0,00
Logic Elements / CLBs 21504 CLBs —
Equivalent System Gates 2000000 gates 2000000
Additional ASIC Gates 250000 gates —
Family RTAX-S/SL Radiation-Tolerant FPGAs —
Technology CMOS, anti-fuse OTP Digital CMOS, antifuse nonvolatile
Radiation Tolerance Radiation-tolerant (space-flight grade) —
Boîtier CBGA624 / CGA-624 ceramic column grid array 624-ball ceramic CGA (CGS624)
Type de montage Surface Mount Surface Mount
Configuration Live at power-up, one-time programmable One-time programmable (OTP), live at power-up, single chip
Embedded Memory Embedded SRAM with built-in FIFO control logic Up to 540 kbits with optional EDAC
Clocking Segmentable clocks, chip-wide highway routing Segmentable clocks, chip-wide highway routing
Arithmetic Support Carry logic —
Température de fonctionnement [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Tension d'alimentation [DATA_NEEDED: core supply voltage] —
Maximum I/O [DATA_NEEDED: maximum user I/O count for CG624 package] —
Statut RoHS [DATA_NEEDED: RoHS status] —
Qualification [DATA_NEEDED: QML qualification level] —
Logic Cells (CLBs) — 21504
User I/Os (max, package dependent) — Up to 684
Total Ionizing Dose (TID) — 300 krad (functional), 200 krad (parametric)
SEU Rate — Less than 1E-10 errors per bit-day
Speed Grade — -1
Quality / Screening Suffix — S (space flow), V suffix qualification level
Core Supply Voltage — [DATA_NEEDED: core supply voltage]
I/O Supply Voltage — [DATA_NEEDED: I/O supply voltage]
Embedded SRAM Features — Built-in FIFO control logic

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