RTAX250S-1CQ352V vs RTAX1000SL-CQ352V Comparación

Comparación detallada lado a lado de RTAX250S-1CQ352V por Microchip Technology y RTAX1000SL-CQ352V por Microchip Technology. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.

Microchip Technology
RTAX250S-1CQ352V RTAX250S-1CQ352V - 250K-Gate Rad-Tolerant FPGA | Microchip

RTAX250S-1CQ352V - 250K-Gate Rad-Tolerant FPGA | Microchip

RTAX250S-1CQ352V ✓ Activo
Microchip Technology
RTAX1000SL-CQ352V RTAX1000SL-CQ352V - 1M-Gate Rad-Tolerant FPGA | Microchip

RTAX1000SL-CQ352V - 1M-Gate Rad-Tolerant FPGA | Microchip

RTAX1000SL-CQ352V ✓ Activo

Comparación de especificaciones

Parámetro RTAX250S-1CQ352V RTAX1000SL-CQ352V
Marca Microchip Technology Microchip Technology
Categoría FPGA & CPLD FPGA & CPLD
Estado del ciclo de vida Activo Activo
Estado del stock In Stock In Stock
Precio unitario (USD) $1.395,00 $0,00
Manufacturer Microchip Technology (Microsemi/Actel) —
Family RTAX-S Radiation-Tolerant FPGAs RTAX-SL (RTAX-S/SL Radiation-Tolerant FPGAs)
Equivalent Gate Count 250,000 gates —
Logic Cells 4,224 18,144
CLBs 2,816 —
Additional ASIC Gates 30,000 —
Core Supply Voltage (Nominal) 1.5 V —
Core Supply Voltage Range 1.425 V to 1.575 V —
Process Technology CMOS 0.15 um CMOS
Speed Grade -1 —
Encapsulado CQ352 (352-pin ceramic column quad flat package) 352-pin Ceramic CQFP (CQ352V)
Programming Technology Antifuse, one-time programmable, live at power-up Antifuse (one-time programmable)
Target Environment Radiation-tolerant, spaceflight —
Tipo de montaje Surface Mount Surface Mount
Temperatura de funcionamiento [DATA_NEEDED: operating temperature range] [DATA_NEEDED: operating temperature range]
Configuration Single-chip, no external configuration device required —
Estado RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS compliance status]
Equivalent System Gates — 1,000,000
CLBs (Logic Modules) — 12,096
Maximum Toggle Frequency — 581 MHz
Core Voltage — 1.5 V
Radiation Tolerance — Radiation-tolerant, space-flight qualified family
Power-Up Behavior — Live at power-up (non-volatile)
Configuration Upset Immunity — No SEU in configuration memory (antifuse)
Embedded Memory — Embedded SRAM with built-in FIFO control logic
I/O Voltage — [DATA_NEEDED: I/O bank voltage range]
Total Ionizing Dose (TID) — [DATA_NEEDED: TID rating in krad (Si)]
Nivel MSL — [DATA_NEEDED: moisture sensitivity level]
Estimated Equivalent Gates per CLB — [DATA_NEEDED: gates-per-CLB ratio]

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