RTAX250S-1CQ352V vs RTAX1000SL-CQ352V Comparaison
Comparaison détaillée côte à côte de RTAX250S-1CQ352V par Microchip Technology et RTAX1000SL-CQ352V par Microchip Technology. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Microchip Technology
RTAX250S-1CQ352V - 250K-Gate Rad-Tolerant FPGA | Microchip
RTAX250S-1CQ352V ✓ ActifMicrochip Technology
RTAX1000SL-CQ352V - 1M-Gate Rad-Tolerant FPGA | Microchip
RTAX1000SL-CQ352V ✓ ActifComparaison des spécifications
| Paramètre | RTAX250S-1CQ352V | RTAX1000SL-CQ352V |
|---|---|---|
| Marque | Microchip Technology | Microchip Technology |
| Catégorie | FPGA & CPLD | FPGA & CPLD |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1 395,00 | $0,00 |
| Manufacturer | Microchip Technology (Microsemi/Actel) | — |
| Family | RTAX-S Radiation-Tolerant FPGAs | RTAX-SL (RTAX-S/SL Radiation-Tolerant FPGAs) |
| Equivalent Gate Count | 250,000 gates | — |
| Logic Cells | 4,224 | 18,144 |
| CLBs | 2,816 | — |
| Additional ASIC Gates | 30,000 | — |
| Core Supply Voltage (Nominal) | 1.5 V | — |
| Core Supply Voltage Range | 1.425 V to 1.575 V | — |
| Process Technology | CMOS | 0.15 um CMOS |
| Speed Grade | -1 | — |
| Boîtier | CQ352 (352-pin ceramic column quad flat package) | 352-pin Ceramic CQFP (CQ352V) |
| Programming Technology | Antifuse, one-time programmable, live at power-up | Antifuse (one-time programmable) |
| Target Environment | Radiation-tolerant, spaceflight | — |
| Type de montage | Surface Mount | Surface Mount |
| Température de fonctionnement | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Configuration | Single-chip, no external configuration device required | — |
| Statut RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS compliance status] |
| Equivalent System Gates | — | 1,000,000 |
| CLBs (Logic Modules) | — | 12,096 |
| Maximum Toggle Frequency | — | 581 MHz |
| Core Voltage | — | 1.5 V |
| Radiation Tolerance | — | Radiation-tolerant, space-flight qualified family |
| Power-Up Behavior | — | Live at power-up (non-volatile) |
| Configuration Upset Immunity | — | No SEU in configuration memory (antifuse) |
| Embedded Memory | — | Embedded SRAM with built-in FIFO control logic |
| I/O Voltage | — | [DATA_NEEDED: I/O bank voltage range] |
| Total Ionizing Dose (TID) | — | [DATA_NEEDED: TID rating in krad (Si)] |
| Niveau MSL | — | [DATA_NEEDED: moisture sensitivity level] |
| Estimated Equivalent Gates per CLB | — | [DATA_NEEDED: gates-per-CLB ratio] |