RTAX250S-LG624V vs RTAX2000S-LG624V Comparación

Comparación detallada lado a lado de RTAX250S-LG624V por Microchip Technology y RTAX2000S-LG624V por Microchip Technology. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.

Microchip Technology
RTAX250S-LG624V RTAX250S-LG624V - 250K-Gate Rad-Tolerant FPGA | Microchip

RTAX250S-LG624V - 250K-Gate Rad-Tolerant FPGA | Microchip

RTAX250S-LG624V ✓ Activo
Microchip Technology
RTAX2000S-LG624V RTAX2000S-LG624V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000S-LG624V - 2M-Gate Rad-Tolerant FPGA | Microchip

RTAX2000S-LG624V ✓ Activo

Comparación de especificaciones

Parámetro RTAX250S-LG624V RTAX2000S-LG624V
Marca Microchip Technology Microchip Technology
Categoría FPGA & CPLD FPGA & CPLD
Estado del ciclo de vida Activo Activo
Estado del stock In Stock In Stock
Precio unitario (USD) $0,00 $1,00
Logic Cells 4224 32,256
Configurable Logic Blocks (CLBs) 2816 21,504
Equivalent Gate Count 250000 gates —
Maximum Toggle Frequency 649 MHz —
Process Technology 0.15 um CMOS —
Core Supply Voltage (Nominal) 1.5 V —
Core Supply Voltage Range [DATA_NEEDED: core supply voltage range] —
User I/O Count 248 —
Encapsulado 624-Pin LGA (LG624) CG624 ceramic column grid array (LG624)
Temperatura de funcionamiento -55C to +125C [DATA_NEEDED: operating temperature range]
Family RTAX-S Radiation-Tolerant FPGA RTAX-S/SL Radiation-Tolerant FPGAs
Radiation Tolerance Radiation-tolerant (space-grade flow, V grade) —
Tipo de montaje Surface Mount —
Estado RoHS [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS compliance]
Nivel MSL [DATA_NEEDED: MSL level] —
Single-Event Effects Immunity [DATA_NEEDED: SEE/TID data] —
Equivalent System Gates — 2,000,000 gates
Embedded Memory — up to 540 kbits SRAM
Memory Protection — optional EDAC protection
User I/Os — up to 684
Program Technology — Nonvolatile antifuse (one-time programmable)
Power-Up Behavior — Live at power-up
Total Ionizing Dose (Functional) — 300 krad
Total Ionizing Dose (Parametric) — 200 krad
SEU Rate — < 1E-10 errors per bit-day
Base Commercial Family — Axcelerator
Primary Application Domain — Space-flight systems
Tensión de alimentación — [DATA_NEEDED: core and I/O supply voltage]

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