RTAX4000S-1LG1272V vs RTAX4000SL-1LG1272E Comparación
Comparación detallada lado a lado de RTAX4000S-1LG1272V por Microchip Technology y RTAX4000SL-1LG1272E por Microchip Technology. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Microchip Technology
RTAX4000S-1LG1272V - Rad-Tolerant FPGA 4M Gates | Microchip
RTAX4000S-1LG1272V ✓ ActivoMicrochip Technology
RTAX4000SL-1LG1272E - 4M-Gate Rad-Tolerant FPGA | Microchip
RTAX4000SL-1LG1272E ✓ ActivoComparación de especificaciones
| Parámetro | RTAX4000S-1LG1272V | RTAX4000SL-1LG1272E |
|---|---|---|
| Marca | Microchip Technology | Microchip Technology |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $9.300,00 | $0,00 |
| Equivalent System Gates | 4,000,000 gates | 4,000,000 |
| Logic Cells | 60480 | — |
| CLBs (Logic Modules) | 40320 | — |
| ASIC Gate Equivalent Option | 500,000 gates | — |
| Family | RTAX-S Radiation-Tolerant FPGA | RTAX-SL (Radiation-Tolerant FPGA) |
| Supply Voltage (Core) | 1.5 V (nominal) | — |
| Speed Grade | -1 | — |
| Encapsulado | LG1272 (1272-ball ceramic column grid array) | 1272-Pin LGA |
| Temperatura de funcionamiento | -55C to +125C | — |
| Technology | CMOS, anti-fuse, one-time programmable | — |
| Configuration | Live at power-up, single chip, no external boot device | True single-chip, no external config PROM |
| Embedded SRAM | Yes, with built-in FIFO control logic | — |
| Clocking | Segmentable clocks, chip-wide highway routing | — |
| Screening Level | V (space flight qualification per datasheet flow) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Estado RoHS | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS status] |
| Max I/O Count | [DATA_NEEDED: user I/O count for LG1272] | [DATA_NEEDED: Maximum user I/O count] |
| Embedded RAM Total | [DATA_NEEDED: total embedded SRAM bits] | — |
| CLB Count | — | 40,320 |
| Logic Cell Count | — | 60,480 |
| Process Technology | — | 0.15 um CMOS |
| Core Supply Voltage | — | 1.5 V |
| Maximum Combinatorial Delay | — | 0.99 ns per CLB |
| Programmability | — | One-Time Programmable (antifuse) |
| Live at Power-Up | — | Yes |
| Radiation Tolerance | — | Radiation-tolerant (space-flight grade) |
| Rango de temperatura de funcionamiento | — | [DATA_NEEDED: Operating Temperature Range] |
| Embedded Memory | — | [DATA_NEEDED: Embedded SRAM capacity] |