RTAX4000S-1LG1272V vs RTAX4000SL-1LG1272E Comparaison
Comparaison détaillée côte à côte de RTAX4000S-1LG1272V par Microchip Technology et RTAX4000SL-1LG1272E par Microchip Technology. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Microchip Technology
RTAX4000S-1LG1272V - Rad-Tolerant FPGA 4M Gates | Microchip
RTAX4000S-1LG1272V ✓ ActifMicrochip Technology
RTAX4000SL-1LG1272E - 4M-Gate Rad-Tolerant FPGA | Microchip
RTAX4000SL-1LG1272E ✓ ActifComparaison des spécifications
| Paramètre | RTAX4000S-1LG1272V | RTAX4000SL-1LG1272E |
|---|---|---|
| Marque | Microchip Technology | Microchip Technology |
| Catégorie | FPGA & CPLD | FPGA & CPLD |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $9 300,00 | $0,00 |
| Equivalent System Gates | 4,000,000 gates | 4,000,000 |
| Logic Cells | 60480 | — |
| CLBs (Logic Modules) | 40320 | — |
| ASIC Gate Equivalent Option | 500,000 gates | — |
| Family | RTAX-S Radiation-Tolerant FPGA | RTAX-SL (Radiation-Tolerant FPGA) |
| Supply Voltage (Core) | 1.5 V (nominal) | — |
| Speed Grade | -1 | — |
| Boîtier | LG1272 (1272-ball ceramic column grid array) | 1272-Pin LGA |
| Température de fonctionnement | -55C to +125C | — |
| Technology | CMOS, anti-fuse, one-time programmable | — |
| Configuration | Live at power-up, single chip, no external boot device | True single-chip, no external config PROM |
| Embedded SRAM | Yes, with built-in FIFO control logic | — |
| Clocking | Segmentable clocks, chip-wide highway routing | — |
| Screening Level | V (space flight qualification per datasheet flow) | — |
| Type de montage | Surface Mount | Surface Mount |
| Statut RoHS | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS status] |
| Max I/O Count | [DATA_NEEDED: user I/O count for LG1272] | [DATA_NEEDED: Maximum user I/O count] |
| Embedded RAM Total | [DATA_NEEDED: total embedded SRAM bits] | — |
| CLB Count | — | 40,320 |
| Logic Cell Count | — | 60,480 |
| Process Technology | — | 0.15 um CMOS |
| Core Supply Voltage | — | 1.5 V |
| Maximum Combinatorial Delay | — | 0.99 ns per CLB |
| Programmability | — | One-Time Programmable (antifuse) |
| Live at Power-Up | — | Yes |
| Radiation Tolerance | — | Radiation-tolerant (space-flight grade) |
| Plage de température de fonctionnement | — | [DATA_NEEDED: Operating Temperature Range] |
| Embedded Memory | — | [DATA_NEEDED: Embedded SRAM capacity] |