STS5DNF60L vs IRF7319TRPBF Comparación
Comparación detallada lado a lado de STS5DNF60L por STMicroelectronics y IRF7319TRPBF por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
STMicroelectronics
STS5DNF60L - Dual N-Ch 60V 5A 35mΩ STripFET II MOSFET | STMicroelectronics
STS5DNF60L ✓ Activo
Comparación de especificaciones
| Parámetro | STS5DNF60L | IRF7319TRPBF |
|---|---|---|
| Marca | STMicroelectronics | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,48 | $0,62 |
| Drain-to-Source Voltage (V_DSS) | 60 V | — |
| Continuous Drain Current (I_D) at 25 °C | 5 A per channel | — |
| On-Resistance R_DS(on) (typ.) | 35 mΩ at V_GS = 10 V | — |
| On-Resistance R_DS(on) (max) | 45 mΩ at V_GS = 10 V, I_D = 2 A | — |
| Gate Threshold Voltage V_GS(th) | [DATA_NEEDED: V_GS(th) value] | — |
| Gate Charge Q_g | [DATA_NEEDED: Q_g total gate charge value] | — |
| Technology | STripFET II trench N-channel | IR MOSFET / Fifth Generation HEXFET |
| Configuration | Dual independent N-channel | N-Channel + P-Channel (complementary half-bridge) |
| Encapsulado | SO-8 (8-SOIC, surface mount) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Power Dissipation P_D (per datasheet) | 2 W | — |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: operating temperature min/max] | -55C to +150C (junction) |
| Automotive Grade | Automotive-grade qualified | — |
| RoHS Compliance | Compliant | — |
| Avalanche Rating | 100% avalanche tested | — |
| Nivel MSL | [DATA_NEEDED: MSL rating] | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Product Type | — | Dual MOSFET Array (N-channel + P-channel) |
| Drain-to-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current N-channel (ID) | — | 6.5 A |
| Continuous Drain Current P-channel (ID) | — | 4.9 A |
| RDS(on) Max N-channel | — | 29 mOhm (per Infineon product page) |
| RDS(on) Max P-channel | — | [DATA_NEEDED: P-channel RDS(on) max] |
| Total Power Dissipation (PD) | — | 2 W |
| Thermal Resistance Junction-to-Ambient N-ch | — | 120 C/W (steady state) |
| Thermal Resistance Junction-to-Ambient P-ch | — | 110 C/W (steady state) |
| Package Type | — | 8-SOIC (SO-8) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Lead-Free / RoHS | — | Yes (PBF suffix = Pb-free) |
| Packaging | — | Tape & Reel (TR suffix) |