STS5DNF60L vs IRF7319TRPBF 比較

詳細な並列比較: STS5DNF60L メーカー: STMicroelectronics および IRF7319TRPBF メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。

仕様比較

パラメータ STS5DNF60L IRF7319TRPBF
ブランド STMicroelectronics Infineon
カテゴリ MOSFETs MOSFETs
ライフサイクル状態 有効 有効
在庫状況 In Stock In Stock
単価(USD) $0.48 $0.62
Drain-to-Source Voltage (V_DSS) 60 V —
Continuous Drain Current (I_D) at 25 °C 5 A per channel —
On-Resistance R_DS(on) (typ.) 35 mΩ at V_GS = 10 V —
On-Resistance R_DS(on) (max) 45 mΩ at V_GS = 10 V, I_D = 2 A —
Gate Threshold Voltage V_GS(th) [DATA_NEEDED: V_GS(th) value] —
Gate Charge Q_g [DATA_NEEDED: Q_g total gate charge value] —
Technology STripFET II trench N-channel IR MOSFET / Fifth Generation HEXFET
Configuration Dual independent N-channel N-Channel + P-Channel (complementary half-bridge)
パッケージ SO-8 (8-SOIC, surface mount) —
実装タイプ Surface Mount Surface Mount
Power Dissipation P_D (per datasheet) 2 W —
動作温度範囲 [DATA_NEEDED: operating temperature min/max] -55C to +150C (junction)
Automotive Grade Automotive-grade qualified —
RoHS Compliance Compliant —
Avalanche Rating 100% avalanche tested —
MSLレベル [DATA_NEEDED: MSL rating] —
Manufacturer — Infineon Technologies (formerly International Rectifier)
Product Type — Dual MOSFET Array (N-channel + P-channel)
Drain-to-Source Voltage (VDS) — 30 V
Continuous Drain Current N-channel (ID) — 6.5 A
Continuous Drain Current P-channel (ID) — 4.9 A
RDS(on) Max N-channel — 29 mOhm (per Infineon product page)
RDS(on) Max P-channel — [DATA_NEEDED: P-channel RDS(on) max]
Total Power Dissipation (PD) — 2 W
Thermal Resistance Junction-to-Ambient N-ch — 120 C/W (steady state)
Thermal Resistance Junction-to-Ambient P-ch — 110 C/W (steady state)
Package Type — 8-SOIC (SO-8)
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/min/max]
Lead-Free / RoHS — Yes (PBF suffix = Pb-free)
Packaging — Tape & Reel (TR suffix)

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