THS4551IRGTR vs ADA4945-1ACPZ Comparación
Comparación detallada lado a lado de THS4551IRGTR por Texas Instruments y ADA4945-1ACPZ por Analog Devices. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Analog Devices
ADA4945-1ACPZ - Low-Noise FDA ADC Driver, 3-10V | Analog Devices
ADA4945-1ACPZ ✓ ActivoComparación de especificaciones
| Parámetro | THS4551IRGTR | ADA4945-1ACPZ |
|---|---|---|
| Marca | Texas Instruments | Analog Devices |
| Categoría | Amplifier ICs | Amplifier ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $3,85 | $2,93 |
| Product Type | Fully Differential Amplifier (FDA) | Fully Differential Amplifier (FDA) / ADC Driver |
| Number of Channels | 1 | 1 |
| -3 dB Bandwidth (G = 1) | 150 MHz | — |
| Slew Rate | 50 V/µs | [DATA_NEEDED: slew rate] |
| Input Voltage Noise Density | 1.5 nV/√Hz | — |
| Input Offset Voltage | [DATA_NEEDED: input offset voltage] | — |
| DC Open-Loop Gain | 100 dB | — |
| Supply Voltage Range | 2.7 V to 5.4 V (single supply) | 3 V to 10 V |
| Tipo de salida | Rail-to-Rail Differential | Differential, rail-to-rail |
| Output Common-Mode Control | Yes (VOCM pin) | Yes (VOCM pin) |
| Temperatura de funcionamiento | -40 C to +125 C | — |
| Encapsulado | VQFN-16 (RGT) 3x3 mm with exposed pad | 16-LFCSP (3 mm × 3 mm) with exposed pad |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| Estado RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Input Voltage Noise (full power mode) | — | 1.8 nV/√Hz |
| Input Offset Voltage Drift | — | 0.1 µV/°C |
| Power Modes | — | 2 selectable (full power / low power) |
| Output Limiting | — | Yes |
| -3 dB Bandwidth | — | [DATA_NEEDED: bandwidth] |
| Corriente en reposo | — | [DATA_NEEDED: quiescent current] |
| Rango de temperatura de funcionamiento | — | -40 °C to +125 °C |
| Process Technology | — | SiGe complementary bipolar, dielectrically isolated |