THS4551IRGTR vs ADA4945-1ACPZ Comparaison
Comparaison détaillée côte à côte de THS4551IRGTR par Texas Instruments et ADA4945-1ACPZ par Analog Devices. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Analog Devices
ADA4945-1ACPZ - Low-Noise FDA ADC Driver, 3-10V | Analog Devices
ADA4945-1ACPZ ✓ ActifComparaison des spécifications
| Paramètre | THS4551IRGTR | ADA4945-1ACPZ |
|---|---|---|
| Marque | Texas Instruments | Analog Devices |
| Catégorie | Amplifier ICs | Amplifier ICs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $3,85 | $2,93 |
| Product Type | Fully Differential Amplifier (FDA) | Fully Differential Amplifier (FDA) / ADC Driver |
| Number of Channels | 1 | 1 |
| -3 dB Bandwidth (G = 1) | 150 MHz | — |
| Slew Rate | 50 V/µs | [DATA_NEEDED: slew rate] |
| Input Voltage Noise Density | 1.5 nV/√Hz | — |
| Input Offset Voltage | [DATA_NEEDED: input offset voltage] | — |
| DC Open-Loop Gain | 100 dB | — |
| Supply Voltage Range | 2.7 V to 5.4 V (single supply) | 3 V to 10 V |
| Type de sortie | Rail-to-Rail Differential | Differential, rail-to-rail |
| Output Common-Mode Control | Yes (VOCM pin) | Yes (VOCM pin) |
| Température de fonctionnement | -40 C to +125 C | — |
| Boîtier | VQFN-16 (RGT) 3x3 mm with exposed pad | 16-LFCSP (3 mm × 3 mm) with exposed pad |
| Type de montage | Surface Mount | Surface Mount |
| Niveau MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL level] |
| Statut RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Input Voltage Noise (full power mode) | — | 1.8 nV/√Hz |
| Input Offset Voltage Drift | — | 0.1 µV/°C |
| Power Modes | — | 2 selectable (full power / low power) |
| Output Limiting | — | Yes |
| -3 dB Bandwidth | — | [DATA_NEEDED: bandwidth] |
| Courant de repos | — | [DATA_NEEDED: quiescent current] |
| Plage de température de fonctionnement | — | -40 °C to +125 °C |
| Process Technology | — | SiGe complementary bipolar, dielectrically isolated |