TLV2888IDGKR-Q1 vs TLV2888IDGKR Comparación
Comparación detallada lado a lado de TLV2888IDGKR-Q1 por Texas Instruments y TLV2888IDGKR por Texas Instruments. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | TLV2888IDGKR-Q1 | TLV2888IDGKR |
|---|---|---|
| Marca | Texas Instruments | Texas Instruments |
| Categoría | Amplifier ICs | Amplifier ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,85 | $0,00 |
| Amplifier Channels | 2 (Dual) | — |
| Supply Voltage Range | up to 36 V | [DATA_NEEDED: supply voltage range] |
| Gain Bandwidth Product | 14 MHz | 14 MHz |
| Input Offset Voltage (Max) | 15 uV | — |
| Offset Voltage Drift (Max) | 0.05 uV/C | — |
| Amplifier Type | Chopper (Zero-Drift), Mux-Friendly CMOS | Chopper (Zero-Drift), MUX-Friendly |
| Tipo de salida | Rail-to-Rail | Rail-to-Rail |
| Input Bias Current | [DATA_NEEDED: input bias current] | — |
| Slew Rate | [DATA_NEEDED: slew rate] | 40 V/us |
| Densidad de ruido | [DATA_NEEDED: voltage noise density] | — |
| Settling Time | [DATA_NEEDED: settling time] | — |
| Temperatura de funcionamiento | -40C to +125C (I grade, AEC-Q100 Q1) | -40C to +125C (I grade) |
| Encapsulado | VSSOP-8 (DGK) | 8-VSSOP (DGK) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q100 (Q1) | — |
| Estado RoHS | Compliant | — |
| Number of Channels | — | 2 (Dual) |
| Input Offset Voltage | — | 3 uV (typ), 15 uV (max) |
| Offset Voltage Drift | — | 0.01 uV/C (typ), 0.1 uV/C (max) |
| Input Voltage Noise | — | 7.5 nV/sqrtHz |
| PSRR | — | 150 dB |
| CMRR | — | 150 dB |
| Input Common-Mode | — | Input to negative rail |
| Packaging | — | Tape & Reel (DGKR suffix) |