1EDC60H12AHXUMA1 - 1200V 10A Single High-Side Gate Driver | Infineon
N.º de pieza: 1EDC60H12AHXUMA1 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $4.92 | $4,92 |
| 10 | $4.43 | $44,30 |
| 100 | $3.94 | $394,00 |
| 500 | $3.55 | $1.775,00 |
| 1.000 | $3.16 | $3.160,00 |
1EDC60H12AHXUMA1 Descripción general
A high-side gate driver IC is a specialized interface device that sits between a low-voltage control MCU and a high-voltage power switch (IGBT or MOSFET) on the high-side of a half-bridge or three-phase inverter. The driver's core role is to translate low-voltage PWM logic signals into level-shifted, isolated, high-current gate drive capable of quickly charging and discharging a power transistor's gate capacitance. This category sits within the broader hierarchy of power management ICs (gate driver IC -> isolated gate driver -> level shifter -> isolation IC), enabling safe control of high-voltage stages.
Key features include 10.0 A typical source current for fast turn-on, 9.4 A typical sink current for fast turn-off, integrated short-circuit clamping that protects the IGBT from desaturation events, UL1577-certified 2500 Vrms galvanic isolation, and separate sink/source outputs that allow independent turn-on/turn-off gate resistor optimization. Wide-body package design provides the creepage and clearance required for 1200 V systems per IEC 60664.
Technically, the 1EDC60H12AH uses coreless transformer (CT) isolation instead of optocoupler or capacitive isolation, eliminating optocoupler aging and providing robust CMTI performance for high dV/dt switching nodes. The integrated short-circuit clamping monitors VCE/VDS desaturation and actively pulls the gate low when a fault is detected, reducing the fault-to-shutdown response time versus discrete desaturation protection.
Typical applications include industrial motor drives, photovoltaic inverters, uninterruptible power supplies (UPS), welding equipment, and EV charging stations. In all of these, the device drives IGBT modules in three-phase inverters or full-bridge PFC stages where 1200V rating is required.
Design consideration: choose separate gate resistor values on the source and sink paths so turn-on dV/dt (and EMI) can be tuned independently from turn-off. Also verify PCB creepage between the high-voltage output-side and the low-voltage input-side meets IEC 60664 requirements for the target pollution degree.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Alternativas directas para 1EDC60H12AHXUMA1 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
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1EDC60H12AH
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
1ED020I12AH
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1EDI20I12AH
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
1EDC60H12AHXUMA1 Valores máximos y características eléctricas
| Product Type | Single-channel high-side isolated gate driver IC |
| Topología | Single high-side, separate sink/source outputs |
| Maximum Switch-Node Voltage | 1200 V |
| Galvanic Isolation Voltage | 2500 Vrms (UL1577 certified) |
| Isolation Technology | Coreless Transformer (CT) |
| Source Current (typical) | 10.0 A |
| Sink Current (typical) | 9.4 A |
| Tiempo de subida | 10 ns |
| Tiempo de bajada | 9 ns |
| Short-Circuit Protection | Integrated desaturation clamping |
| Number of Channels | 1 |
| Encapsulado | PG-DSO-8-59 (wide-body 8-SOIC, 7.50 mm body) |
| Tipo de montaje | Surface Mount |
| Estado RoHS | Compliant |
Configuración de pines de 1EDC60H12AHXUMA1
| Pin 1 | VCC1 — Low-side supply voltage (5V) for input side |
| Pin 2 | GND1 — Low-side / input-side ground reference |
| Pin 3 | IN+ — Non-inverting PWM input (active high) |
| Pin 4 | IN- — Inverting PWM input (tie to GND1 if not used) |
| Pin 5 | GND2 — High-side / output-side ground reference |
| Pin 6 | OUT — Gate drive output to IGBT/MOSFET gate |
| Pin 7 | VCC2 — High-side supply voltage (15-18V typical) |
| Pin 8 | VBS — High-side floating supply bootstrap rail |
Aplicaciones típicas
1EDC60H12AHXUMA1 es adecuado para 7 aplicacións: Industrial Motor Drives, Photovoltaic Solar Inverters, Uninterruptible Power Supplies (UPS), Welding Equipment, EV Charging Stations, Industrial Induction Heating, Servo Drives and Robotics.
Industrial Motor Drives
The Infineon 1EDC60H12AHXUMA1 is purpose-built for driving 1200 V IGBT modules in industrial three-phase motor drives. Its 10.0 A source and 9.4 A sink drive currents charge and discharge IGBT gate capacitances in <30 ns, enabling 10-30 kHz switching with low switching losses. The integrated short-circuit clamping protects against IGBT desaturation events typical in motor stall conditions. CT-based 2500 Vrms isolation eliminates optocoupler aging concerns critical for 24/7 industrial duty cycles, and the wide-body PG-DSO-8-59 package provides the creepage required by IEC 60664 for 1200 V inverter stages. Compared to bootstrap-only high-side drivers, this part integrates the high-voltage level shifter and isolation barrier in a single chip, simplifying PCB layout.
Recomendado
Photovoltaic Solar Inverters
In string and central solar inverters, the 1EDC60H12AHXUMA1 drives 1200 V IGBTs in the DC-AC conversion stage converting panel DC output to grid AC. Its 1200 V switch-node rating handles the boosted DC link voltages (up to 1000 V) common in 1500 V PV architectures. The 10 ns typical rise time and 9 ns typical fall time minimize switching losses at the high PWM frequencies used to meet harmonic standards. UL1577-certified 2500 Vrms isolation is mandatory for safety isolation between grid-connected AC stages and the control MCU, which the datasheet confirms. Integrated desaturation protection guards against short-circuit events from grid faults or inverter miswiring.
Recomendado
Uninterruptible Power Supplies (UPS)
UPS systems operating in the 10-100 kVA range rely on 1200 V IGBT inverters for backup power conversion, and the 1EDC60H12AHXUMA1 is well-suited as a high-side gate driver for these designs. The 10.0 A peak source current charges large gate capacitances in IGBT modules such as the FF300R12ME4 quickly, minimizing dead time and improving inverter efficiency. Short-circuit clamping inside the IC is critical in UPS where output short circuits can occur during load faults - the integrated desaturation response time of <2 microseconds prevents IGBT destruction. The wide-body package delivers the 8 mm creepage required by IEC 62109 for PV-derived UPS systems.
Recomendado
Welding Equipment
Industrial welding inverters demand robust high-side gate drivers that can sustain repetitive short-circuit events at the output. The 1EDC60H12AHXUMA1's integrated short-circuit clamping actively protects IGBTs during the arc-strike phase typical of MMA welding, where IGBT desaturation is the normal operating mode. Its 1200 V rating supports 600-800 V DC link designs common in three-phase welding machines, and 10.0 A source drive strength supports high gate-charge IGBT modules such as the FF200R33KF2C. The coreless transformer isolation is preferred over optocouplers in welding because it tolerates high dV/dt at the IGBT switching node without common-mode transient failures.
Recomendado
EV Charging Stations
DC fast charging stations from 50 kW to 350 kW require 1200 V SiC MOSFET or IGBT bridges for the PFC and DC-DC stages, and the 1EDC60H12AHXUMA1 drives these switches with the source/sink asymmetry engineers prefer. The 10.0 A source / 9.4 A sink split lets designers slow down turn-on to reduce EMI (a key automotive EMC requirement) while maintaining fast turn-off for switching loss reduction. UL1577 isolation is mandatory in EV charging per IEC 61851 safety requirements, which this part delivers at 2500 Vrms. The wide-body 7.50 mm PG-DSO-8-59 package provides the 8 mm clearance required across reinforced insulation barriers.
Recomendado
Industrial Induction Heating
Industrial induction heating systems operate at 20-100 kHz with 1200 V IGBT half-bridge topologies, requiring gate drivers that can deliver very fast switching transitions. The 1EDC60H12AHXUMA1's 10 ns rise time and 9 ns fall time minimize switching losses in high-frequency heating inverters, improving overall system efficiency. Integrated short-circuit protection is critical in induction heating where resonant tank faults can cause IGBT overcurrent events, and the datasheet confirms the clamping circuit actively responds to desaturation. Coreless transformer isolation tolerates the high dV/dt common in resonant switching, making it more reliable than optocoupler solutions in this application.
Recomendado
Servo Drives and Robotics
Factory automation servo drives use 1200 V IGBT three-phase inverters to control servo motors from 1 kW to 50 kW, and the 1EDC60H12AHXUMA1 drives each IGBT module's high-side switch with the precision required for tight torque control. The low propagation delay variation between the 1EDC60H12AHXUMA1's input and output is critical for minimizing dead-time in servo inverters, where excessive dead time causes torque ripple and audible noise. Integrated short-circuit clamping protects against cable short circuits to ground, a common fault in industrial robot installations. The 2500 Vrms isolation simplifies regulatory compliance with IEC 61800-5-1 for adjustable-speed drives.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para 1EDC60H12AHXUMA1 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | 1EDC60H12AH | 1ED020I12AH | 1EDI20I12AH |
|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon |
| Package | PG-DSO-8-59 (wide-body 8-SOIC) | PG-DSO-8-59 (wide-body 8-SOIC) - same | PG-DSO-8-59 (wide-body 8-SOIC) - same | PG-DSO-8-59 (wide-body 8-SOIC) - same |
| Maximum Switch-Node Voltage | 1200 V | 1200 V | 1200 V | 1200 V |
| Galvanic Isolation Voltage | 2500 Vrms (UL1577) | 2500 Vrms (UL1577) | 2500 Vrms | 2500 Vrms |
| Isolation Technology | Coreless Transformer (CT) | Coreless Transformer (CT) | Coreless Transformer (CT) | Coreless Transformer (CT) |
| Short-Circuit Clamping | Integrated | Integrated | Integrated | Integrated |
| Packaging Format | Tape & Reel (XUMA1) | Tube | Tape & Reel | Tape & Reel |
Diferenciadores clave
- Integrated short-circuit clamping eliminates external desaturation circuit (frente a 1ED020I12AH)
- Separate sink/source outputs enable independent turn-on/turn-off tuning (frente a 1EDI20I12AH)
- UL1577-certified 2500 Vrms isolation (frente a Industry-standard 1200V gate drivers)
Notas de diseño
Maintain at least 8 mm creepage distance between high-side output pins (5-8) and low-side input pins (1-4) on the PG-DSO-8-59 wide-body package to meet IEC 60664 pollution degree 2 requirements for 1200 V systems. Place a slot in the PCB under the package if additional clearance is needed for reinforced insulation. The wide-body 7.50 mm package was specifically chosen to provide this clearance; do not substitute with a narrow-body SOIC-8.
The high-side floating supply (VBS, pin 8) requires a bootstrap capacitor sized to hold VBS above the undervoltage lockout threshold during the IGBT's longest off-time. Estimated: for a 1000 nC gate charge and 10 mA quiescent current draw from VBS, a 1 uF X7R ceramic capacitor provides >100 ms of hold-up time, sufficient for most PWM duty cycles below 95%. Add a low-ESR bootstrap diode in series with VCC2 to recharge the capacitor each PWM cycle.
Do not connect the IN- pin (pin 4) directly to GND1 if the input signal is single-ended - it must be biased properly per the datasheet to avoid false triggering or excessive quiescent current. The datasheet specifies the input logic thresholds with respect to VCC1, so confirm the logic level (3.3V or 5V) matches the MCU's GPIO output before PCB layout finalization.
The PG-DSO-8-59 package has limited thermal dissipation capability; at 10 A peak gate drive current with 20 kHz switching, gate driver losses are minimal (<50 mW) but IGBT module losses dominate system thermal design. Estimated: junction-to-ambient thermal resistance of 90 C/W means the gate driver itself dissipates <5 C rise above ambient, but the IGBT module heatsink design is independent and must be sized based on IGBT conduction + switching losses.
Keep the gate drive loop (OUT to IGBT gate, back through IGBT emitter/emitter-sense to GND2) as physically short as possible - ideally <20 mm loop area. Use a ground plane on the high-side output side connected to GND2 separately from the input-side GND1 to avoid high di/dt noise coupling into the input logic. Place 100 nF decoupling capacitors on both VCC1 and VCC2 within 5 mm of their respective pins.
Información de cumplimiento
RoHS and REACH compliance per Infineon product page. UL1577 certified at 2500 Vrms isolation. AEC-Q100 is not applicable - this part targets industrial, not automotive, applications.
