AFT26HW050SR3 - 9W Asym Doherty LDMOS 2496-2690 MHz | NXP
N.º de pieza: AFT26HW050SR3 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $74.59 | $74,59 |
| 10 | $67.13 | $671,30 |
| 100 | $59.67 | $5.967,00 |
| 500 | $53.7 | $26.850,00 |
| 1.000 | $47.74 | $47.740,00 |
AFT26HW050SR3 Descripción general
An RF power LDMOS transistor is a lateral double-diffused metal-oxide-semiconductor field-effect transistor optimized for high-frequency, high-power operation. Within the broader taxonomy it is a power MOSFET, then a discrete semiconductor, and finally a building block of RF front-end modules. Airfast LDMOS specifically targets cellular base-station power amplifiers where linearity, gain, and thermal stability across instantaneous bandwidth are paramount. The AFT26HW050SR3 sits in NXP's Airfast 26-series lineup aimed at the 2.6 GHz TDD-LTE and emerging 5G NR bands.
Key features include operation from 2496 to 2690 MHz, 14.2 dB typical power gain, integrated asymmetrical Doherty input networks, an NI-780-4S4 air-cavity ceramic package for low thermal resistance, and RoHS-compliant construction. The wide instantaneous bandwidth supports multi-carrier LTE signals up to 60 MHz or wider without re-matching, simplifying radio unit design for carriers aggregating multiple LTE bands.
The transistor uses an N-channel enhancement-mode LDMOS structure with separate drain pads for the main and peak PA sections. Internal matching reduces external component count, and the integrated design shortens the Doherty combiner path, improving efficiency at 6–9 dB output back-off where LTE signals statistically operate most of the time.
Typical applications include 4G LTE and 5G NR TDD base-station power amplifiers, multi-carrier macro-cell transmitters, and Doherty amplifier reference designs for the 2.6 GHz band. It is also used in active antenna systems (AAS) and small-cell infrastructure where size, gain, and Doherty efficiency converge.
When designing with the AFT26HW050SR3, follow the reference PCB layout and bias network from the NXP application notes for Doherty operation. Adequate heatsinking and forced-air cooling are essential at full CW-rated output, and harmonic filtering must be sized for the selected LTE signal bandwidth.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the standalone manufacturer datasheet, providing engineers with a faster path to component selection for 2.6 GHz base-station PA designs.
Alternativas directas para AFT26HW050SR3 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con AFT26HW050SR3 (mismo factor de forma y huella) — difiere en Mounting Type, Manufacturer, Configuration, Device Type, Frequency Range.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
AFT26HW050GSR3
✅ Sustitución directa✓ En stock
$51.2 / unidad
Ver hoja de datos →AFT26H050W26SR3
✅ Sustitución directa✓ En stock
$23.95 / unidad
Ver hoja de datos →AFT26P100-4S2R6
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
AFT26HW050SR3 Valores máximos y características eléctricas
| Manufacturer | NXP Semiconductors |
| Part Family | Airfast AFT26HW050S Series |
| Device Type | RF Power LDMOS Transistor (Asymmetrical Doherty) |
| Transistor Polarity | N-Channel |
| Mode | Enhancement Mode |
| Frequency Range | 2496 MHz to 2690 MHz |
| Output Power (Average) | 9 W (Average) |
| Output Power (Peak) | 50 W (Peak) |
| Power Gain (Typical) | 14.2 dB |
| Drain Voltage (Operating) | 28 V |
| Quiescent Current (Test) | 100 mA |
| Encapsulado / Carcasa | NI-780-4S4 (Ceramic Air-Cavity) |
| Topología | Asymmetrical Doherty (Main + Peak) |
| Application Band | 2.6 GHz TDD-LTE / 5G NR |
| Estado RoHS | Compliant |
| Lead-Free | Yes |
| Tipo de montaje | Surface Mount (SMD RF Flange) |
| Series | Airfast RF Power |
Guía de configuración de pines de AFT26HW050SR3 ni-780-4s4 (ceramic air-cavity)
Configuración de pines para AFT26HW050SR3 (encapsulado ni-780-4s4 (ceramic air-cavity)). Este dispositivo de potencia presenta terminales de puerta, drenador y fuente. Para encapsulados no polarizados, consulte la hoja de datos del fabricante para conocer la orientación exacta del pin 1 y los detalles del footprint. Las aplicaciones habituales incluyen el diseño de fuentes de alimentación, el accionamiento de motores y la conmutación de cargas.
No hay datos detallados de patillaje disponibles para AFT26HW050SR3.
Consulte la hoja de datos para ver la configuración completa de patillas.
Área de funcionamiento seguro (DC)
Aplicaciones típicas
AFT26HW050SR3 es adecuado para 6 aplicacións: 4G LTE TDD Macro-Cell Base Station PA, 5G NR TDD Active Antenna System (AAS), Multi-Carrier Doherty Power Amplifier, Small-Cell / Pico-Cell Base Station, Digital Predistortion (DPD) Driver Stage, Private LTE / Industrial Network Radio.
4G LTE TDD Macro-Cell Base Station PA
The AFT26HW050SR3's 9 W average / 50 W peak output and 14.2 dB gain make it well suited to the final-stage Doherty PA of a 4G LTE TDD macro-cell base-station radio unit covering Band 38/40/41 (2496–2690 MHz). It is biased at 28 V and 100 mA quiescent, which is the canonical bias point for Airfast LDMOS Doherty operation in the 2.6 GHz band. Designers benefit from very wide instantaneous bandwidth—the part supports LTE carriers up to 60 MHz or wider without re-matching—simplifying multiband radio designs. The integrated main-and-peak architecture also reduces the BOM and PCB combiner complexity compared with discrete two-transistor Doherty implementations.
Recomendado
5G NR TDD Active Antenna System (AAS)
For 5G NR TDD active antenna systems operating in n38/n40/n41, the AFT26HW050SR3's wide instantaneous bandwidth and integrated Doherty structure map directly onto AAS radio-element requirements. Each antenna element needs a compact, efficient PA, and this part's NI-780-4S4 ceramic package fits behind element arrays where board height is constrained. Its 14.2 dB gain allows the device to be driven from a low-power DPD output stage without an extra gain block, reducing per-element power consumption. The 28 V bias point is also compatible with standard -48V-rectified AAS power rails, simplifying PSU design.
Recomendado
Multi-Carrier Doherty Power Amplifier
In multi-carrier Doherty power amplifiers used at the radio-unit output stage, the AFT26HW050SR3's asymmetrical Doherty topology enables high efficiency at the 6–9 dB output back-off where multi-carrier LTE and 5G NR signals statistically operate. Its 9 W average output rating is sized for typical macro-cell sectors handling 2–4 carriers, and the wide instantaneous bandwidth avoids retuning when carrier bandwidth changes. Compared with symmetric Doherty designs, the asymmetrical structure shifts the efficiency peak closer to the average operating point, lowering overall radio-unit energy consumption.
Recomendado
Small-Cell / Pico-Cell Base Station
For small-cell and pico-cell base stations operating in the 2.6 GHz TDD band, the AFT26HW050SR3 provides 9 W average output in a compact NI-780-4S4 footprint. This power level is appropriate for outdoor micro cells where 1–2 carriers per sector are aggregated and where efficiency at moderate back-off matters more than peak power. The 14.2 dB gain reduces the driver-stage power budget, and the integrated Doherty main/peak pair shortens the PCB combiner path—important in small-cell layouts where board area is limited.
Recomendado
Digital Predistortion (DPD) Driver Stage
The AFT26HW050SR3 can serve as the final-stage LDMOS in a DPD linearized transmitter chain for 2.6 GHz TDD radios. Its 14.2 dB gain and wide bandwidth support linear operation across multi-carrier LTE and 5G NR aggregated signals, allowing the upstream DPD engine to correct non-linearities without external filtering. The 28 V bias and integrated Doherty topology pair naturally with commercial DPD ASICs aimed at small-cell and macro-cell radio units, simplifying the overall RF lineup.
Recomendado
Private LTE / Industrial Network Radio
For private LTE and industrial network radios deployed in the 2.6 GHz CBRS-style allocations, the AFT26HW050SR3's 9 W average power and Doherty efficiency suit mid-power enterprise radio units. Its RoHS-compliant NI-780-4S4 package and wide bandwidth make it a flexible choice for industrial customers operating LTE or 5G NR in shared spectrum. Designers can reuse NXP's reference Doherty layouts, accelerating time-to-market for private-network equipment vendors.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para AFT26HW050SR3 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | AFT26HW050GSR3 | AFT26H050W26SR3 | AFT26P100-4S2R6 |
|---|---|---|---|---|
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Package | NI-780-4S4 | NI-780-4S4 (GSR3 outline) - same family | NI-780-4S4 - same | NI-780-4S2 - same family |
| Frequency Range | 2496–2690 MHz | 2496–2690 MHz | 2496–2690 MHz | 2496–2690 MHz |
| Output Power (Average) | 9 W | 9 W | 9 W | ~15 W |
| Power Gain | 14.2 dB | 14.2 dB | 14.2 dB | ~13 dB |
| Drain Voltage | 28 V | 28 V | 28 V | 28 V |
| Topology | Asymmetrical Doherty | Asymmetrical Doherty | Asymmetrical Doherty | Asymmetrical Doherty |
| RoHS | Compliant | Compliant | Compliant | Compliant |
Diferenciadores clave
- Very wide instantaneous bandwidth in 2.6 GHz band (frente a AFT26P100-4S2R6)
- Integrated asymmetrical Doherty main + peak in single package (frente a AFT26HW050GSR3)
- 14.2 dB typical gain eliminates external driver stage (frente a AFT26P100-4S2R6)
Notas de diseño
Estimated: at 9 W average CW output and 28 V drain with ~50% PA efficiency, internal dissipation is about 9 W. The NI-780-4S4 package is rated for low thermal resistance; mount the device on a copper-molybdenum carrier with a forced-air heatsink and follow NXP reference layout to keep junction temperature within safe limits for base-station duty cycles.
Use the NXP reference PCB stack-up for Doherty LDMOS in the 2.6 GHz band—typically Rogers RO4350B or equivalent low-loss substrate. Maintain 50 ohm controlled-impedance traces on input and output, place DC blocking and bypass capacitors per the reference design, and keep the main/peak combiner trace lengths matched to within the tolerance specified in the application note.
Do not substitute the SR3 flange with the GSR3 outline without verifying the PCB footprint against the NXP datasheet mechanical drawings. Both are NI-780-family packages but flange dimensions and lead pitch differ slightly. Also verify bias sequencing—Vgs must be applied before Vdd to prevent device damage during power-up.
Información de cumplimiento
RoHS compliance confirmed from NXP AFT26HW050S datasheet and distributor listings. AEC-Q100 not applicable for RF power LDMOS.
