AUIRS21811STR - 600V Half-Bridge Gate Driver 1.9A | Infineon
N.º de pieza: AUIRS21811STR ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $2.36 | $2,36 |
| 10 | $2.12 | $21,20 |
| 100 | $1.85 | $185,00 |
| 500 | $1.62 | $810,00 |
| 1.000 | $1.41 | $1.410,00 |
| 2.500 | $1.22 | $3.050,00 |
AUIRS21811STR Descripción general
A gate driver IC is a power-management semiconductor that translates low-power PWM control signals from a microcontroller or DSP into the high-current gate-drive signals required to switch discrete power MOSFETs, IGBTs, or GaN FETs. Gate drivers sit between the logic controller and the power stage in the system hierarchy: gate driver -> power management IC -> semiconductor -> discrete switch. By providing local high-current drive and level-shifting, they reduce switching losses, allow smaller gate resistors, and protect the controller from high-voltage transients on the switched node.
Key features of the AUIRS21811STR include 1.9 A source / 2.3 A sink peak output current, 600 V absolute maximum bootstrap high-side rail, 10 V to 20 V VCC range with integrated undervoltage lockout (UVLO) on both VCC and VBS rails, 60 ns typical rise time and 35 ns typical fall time into a 1 nF load, and 160 ns propagation delay (typical). The 8-SOIC footprint keeps the design compact while the high dV/dt immunity and negative VS transient tolerance simplify layout in half-bridge and full-bridge motor-drive topologies.
Architecturally, the AUIRS21811STR uses a level-shifted high-side channel with a floating bootstrap supply referenced to the switch node (VS), allowing continuous high-side drive up to the 600 V rail. The low-side channel is supplied directly from VCC. The input stage accepts 3.3 V/5 V CMOS or logic-level inputs with non-inverting polarity, and the matched propagation delays between channels simplify dead-time control in complementary PWM applications. AEC-Q100 grade-1 qualification and automotive-grade moisture sensitivity level (MSL3) make it suitable for underhood and chassis electronics.
Typical applications for the AUIRS21811STR include automotive 12 V/48 V motor drives (HVAC blowers, oil/water pumps, electric power steering auxiliary rails), DC-DC converter primary-side MOSFET driving, Class D audio amplifiers, and small industrial half-bridge inverters. The wide bootstrap tolerance also makes it usable in 230 V AC PFC and totempole PFC front ends when the topology calls for a 600 V driver.
When designing with this part, place the VCC bypass capacitor (typically 0.1 uF ceramic in parallel with 10 uF bulk) as close to pins 5 and 8 as possible, and keep the bootstrap diode and BST capacitor (typically 0.1 uF to 1 uF) loop tight to limit the high-side rail ringing. For applications above 1 kW per phase, verify that the 1.9 A source/2.3 A sink rating gives sufficient gate-charge headroom for the chosen MOSFET/IGBT; larger switches may require a dedicated gate-driver buffer stage.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that supplement the manufacturer datasheet and help engineers select, source, and lay out the AUIRS21811STR with confidence.
Alternativas directas para AUIRS21811STR — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con AUIRS21811STR (mismo factor de forma y huella) — difiere en Package, RoHS Status.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
AUIRS21811S
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
IRS21811STRPBF
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
IRS21811SPBF
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
NCP5181DR2G
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
IRS2104STRPBF
✅ Sustitución directa✓ En stock
$0.45 / unidad
Ver hoja de datos →AUIRS21811STR Valores máximos y características eléctricas
| Configuration | High and Low Side, Independent |
| Driver Type | Half-Bridge Gate Driver IC, Non-Inverting |
| Number of Drivers | 2 |
| Supply Voltage (VCC) | 10 V to 20 V |
| Bootstrap High-Side Voltage (Max) | 600 V |
| Peak Source Current | 1.9 A |
| Peak Sink Current | 2.3 A |
| Rise Time (Typ, 1 nF load) | 60 ns |
| Fall Time (Typ, 1 nF load) | 35 ns |
| Propagation Delay (Typ) | 160 ns |
| Input Logic Levels | VIL 0.8 V, VIH 2.5 V (CMOS/TTL compatible) |
| Input Type | Non-Inverting |
| Undervoltage Lockout (UVLO) | Yes, on VCC and VBS |
| Rango de temperatura de funcionamiento | -40 C to +125 C |
| Encapsulado | 8-SOIC (3.90 mm width) |
| Tipo de montaje | Surface Mount |
| Nivel de sensibilidad a la humedad (MSL) | MSL3 |
| Automotive Qualification | AEC-Q100 |
| Estado RoHS | Compliant |
Configuración de pines de AUIRS21811STR
| Pin 1 | VCC — Low-side and logic supply voltage (10 V to 20 V) |
| Pin 2 | HIN — Logic input for high-side gate driver output (HO), non-inverting |
| Pin 3 | LIN — Logic input for low-side gate driver output (LO), non-inverting |
| Pin 4 | GND — Ground reference for VCC and low-side channel |
| Pin 5 | LO — Low-side gate drive output |
| Pin 6 | VS — High-side floating supply return / switch node |
| Pin 7 | HO — High-side gate drive output |
| Pin 8 | VBOOT — Bootstrap supply for high-side driver (referenced to VS) |
Aplicaciones típicas
AUIRS21811STR es adecuado para 6 aplicacións: Automotive 12V/48V Motor Drives, DC-DC Converter Primary-Side Drive, Class D Audio Amplifier Output Stage, Industrial Half-Bridge Inverters, PFC and Totempole PFC Front-End, Auxiliary Power Supply Half-Bridge.
Automotive 12V/48V Motor Drives
The AUIRS21811STR drives the high-side and low-side MOSFETs in 12 V and 48 V automotive half-bridge motor stages, including HVAC blowers, electric water/oil pumps, and belt-starter-generator auxiliary rails. Its 600 V bootstrap tolerance gives substantial margin above 48 V buses, while the 1.9 A source / 2.3 A sink peak currents switch sub-100 A MOSFETs with 60 ns/35 ns edge times. AEC-Q100 grade-1 qualification supports underhood operation to +125 C. Compared to discrete push-pull drivers, the integrated UVLO and dV/dt immunity simplify PCB layout.
Recomendado
DC-DC Converter Primary-Side Drive
In isolated DC-DC converters and telecom brick power supplies, the AUIRS21811STR drives the primary-side MOSFETs of a half-bridge or push-pull topology. The 600 V bootstrap tolerance handles 380 V rectified bus rails with margin, while the 160 ns propagation delay supports switching frequencies up to ~500 kHz. The independent high-side and low-side inputs (HIN, LIN) enable complementary PWM with dead-time control, and the 10 V to 20 V VCC range is compatible with standard 12 V auxiliary rails. Designers pair it with synchronous-rectifier drivers on the secondary side.
Recomendado
Class D Audio Amplifier Output Stage
The AUIRS21811STR drives the output half-bridge MOSFETs in Class D audio amplifiers, where its 60 ns rise / 35 ns fall edge times minimize switching losses at 250-500 kHz PWM carrier frequencies. The 1.9 A source / 2.3 A sink current is sufficient for sub-200 W subwoofer stages using 100 V MOSFETs. The matched propagation delays between high-side and low-side channels reduce dead-time distortion, improving THD+N. The 8-SOIC footprint keeps the amplifier compact; for higher power the AUIRS2113STR provides 2 A/3 A peak drive in the same footprint.
Recomendado
Industrial Half-Bridge Inverters
Small industrial inverters in the 1-5 kW range for pumps, fans, and small servo drives use the AUIRS21811STR to drive their IGBT or super-junction MOSFET half-bridges. The 600 V rating supports 230 V AC rectified buses (peak ~325 V), and the 1.9 A/2.3 A peak drive handles 25-50 A class switches. The integrated UVLO on both VCC and VBS prevents partial-gate conduction during power-up brownouts, a common failure mode in industrial motor-drive designs. For higher-current stages, parallel the AUIRS21811STR outputs or upgrade to AUIRS2117STR.
Recomendado
PFC and Totempole PFC Front-End
In continuous-conduction-mode (CCM) PFC and bridgeless totempole PFC front-ends, the AUIRS21811STR drives the high-frequency half-bridge switching leg. The 600 V bootstrap tolerance handles the rectified 230 V AC bus (peak 325 V plus ringing), and the dV/dt immunity prevents high-side latch-up from fast MOSFET edges. The 10 V to 20 V VCC range allows direct connection to the PFC controller's 12 V or 15 V bias rail. For 400 V totem-pole designs, the AUIRS2113STR or silicon-carbide-optimized drivers are recommended for tighter timing.
Recomendado
Auxiliary Power Supply Half-Bridge
Auxiliary and standby power supplies in industrial equipment often use a small half-bridge topology for the 5 V to 24 V housekeeping rails. The AUIRS21811STR drives the primary-side MOSFETs from a 390 V bus with switching frequencies of 100-200 kHz, while the integrated bootstrap supply simplifies the high-side rail. The non-inverting 3.3 V/5 V logic inputs connect directly to the PWM controller without level shifters, and the 160 ns propagation delay supports tight regulation loops. This application benefits from the part's compact 8-SOIC footprint on densely populated control boards.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para AUIRS21811STR — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | AUIRS21811S | IRS21811STRPBF | IRS21811SPBF | NCP5181DR2G | IRS2104STRPBF |
|---|---|---|---|---|---|---|
| Package | 8-SOIC (3.90 mm) | 8-SOIC (3.90 mm) - same | 8-SOIC (3.90 mm) - same | 8-SOIC (3.90 mm) - same | 8-SOIC (3.90 mm) - same | 8-SOIC (3.90 mm) - same |
| Brand | Infineon | Infineon | Infineon | Infineon | onsemi | Infineon |
| Bootstrap Voltage (Max) | 600 V | 600 V | 600 V | 600 V | 600 V | 600 V |
| Peak Source Current | 1.9 A | 1.9 A | 1.9 A | 1.9 A | 3.0 A | 0.13 A |
| Peak Sink Current | 2.3 A | 2.3 A | 2.3 A | 2.3 A | 3.0 A | 0.27 A |
| VCC Supply Range | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V |
| Automotive Qualification | AEC-Q100 Grade-1 | AEC-Q100 Grade-1 | Commercial only | Commercial only | Commercial only | Commercial only |
Diferenciadores clave
- AEC-Q100 automotive qualification with same electrical specs as commercial IRS21811STR (frente a IRS21811STRPBF)
- Higher peak drive current (1.9 A/2.3 A) for fast switching edges (frente a IRS2104STRPBF)
- Matched propagation delay between high-side and low-side channels (frente a NCP5181DR2G)
- Negative VS transient tolerance and dV/dt immunity (frente a Generic half-bridge drivers)
Notas de diseño
Decouple VCC with a 0.1 uF X7R ceramic placed within 2 mm of pins 1 and 4, in parallel with a 10 uF X5R bulk capacitor. Add a 1 uF to 10 uF bulk capacitor on VBOOT referenced to VS; the bootstrap diode must be a fast-recovery or Schottky type with reverse recovery under 50 ns (UF4007 or ES1J work well). Estimated: at 100 kHz switching with 100 nC Qg, the bootstrap capacitor should be at least 10x the gate charge (i.e. >=1 uF) to keep ripple below 5% of VBS.
The 8-SOIC package has a thermal resistance (theta_JA) of approximately 80-100 C/W on a standard JEDEC 1 sq-in copper pour, rising to ~150 C/W with minimal copper. Estimated: at 200 kHz switching with 100 nC Qg total, gate-drive losses in the AUIRS21811STR reach approximately 0.2 W per phase, causing a 20-30 C junction rise on a 1 sq-in pour. For continuous 200 kHz operation above 0.5 W gate losses, increase the copper area to 2-3 sq-in or use thermal vias to an internal ground plane.
Keep the high-side gate-drive loop (HO -> gate resistor -> MOSFET gate -> source -> VS -> VBOOT bypass cap -> back to VBOOT) as small as physically possible - typically under 1 sq-cm. Place the bootstrap diode and VBOOT capacitor close to pins 6, 7, and 8. Route HIN, LIN, and GND away from the HO and LO switching nodes to avoid capacitive coupling that can inject glitches into the logic inputs. A 4-layer board with a continuous ground plane beneath the driver is strongly recommended to control the dV/dt-induced ground bounce.
Do not operate the AUIRS21811STR with VCC below 10 V or above 20 V - the integrated UVLO will shut down both channels, and excessive VCC stresses the internal gate-oxide. Verify the dead-time between HIN falling and LIN rising (and vice versa) to prevent shoot-through; the AUIRS21811STR does not include built-in dead-time control. For negative VS transients below -5 V, add a TVS clamp (e.g. SMBJ series) between VS and GND to protect the high-side return path.
Información de cumplimiento
AEC-Q100 grade-1 automotive qualified per Infineon product page. RoHS and REACH compliant. Halogen-free per industry-standard Infineon datasheet disclosure. Lead-free reflow-compatible.
