IRS2104STRPBF - 600V Half-Bridge Gate Driver | Infineon
MPN: IRS2104STRPBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.95 | $0.95 |
| 10 | $0.82 | $8.20 |
| 100 | $0.68 | $68.00 |
| 500 | $0.55 | $275.00 |
| 1,000 | $0.45 | $450.00 |
Drop-in alternatives for IRS2104STRPBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IRS2104SPBF
β Drop-Inπ Reference alternative (not in catalog)
IRS2110SPBF
β Drop-Inπ Reference alternative (not in catalog)
IRS2124SPBF
β Drop-Inπ Reference alternative (not in catalog)
IRS2186SPBF
β Drop-Inπ Reference alternative (not in catalog)
IRS2302STRPBF
β Drop-Inβ In Stock
$0.54 / Unit
View Datasheet βTPG2104
β Drop-Inπ Reference alternative (not in catalog)
IRS2104STRPBF Maximum Ratings & Electrical Characteristics
| Product Type | Half-Bridge Gate Driver IC |
| Topology | Half-Bridge (High-Side + Low-Side) |
| Number of Channels | 2 (HS + LS, dependent) |
| High-Side Offset Voltage (VS) | -5 V to +600 V |
| Logic Supply Voltage (VCC) | 10 V to 20 V |
| Source Current (typ.) | 0.29 A |
| Sink Current (typ.) | 0.6 A |
| Propagation Delay (typ.) | 150 ns |
| Rise Time (typ.) | 35 ns |
| Fall Time (typ.) | 70 ns |
| Quiescent Current (typ.) | 150 uA |
| Undervoltage Protection | Yes (VCC and VBS UVLO) |
| Shutdown Pin | Yes (SD, active-low per typical usage) |
| Logic Input Compatibility | Standard CMOS / LSTTL |
| Operating Junction Temperature | -40C to +150C |
| Package | 8-Lead SOIC (SOIC-8) |
| Mounting Type | Surface Mount |
| MSL Level | 2 (1 year floor life per datasheet) |
| Qualification Level | Industrial |
| RoHS Status | Compliant (PbF suffix) |
IRS2104STRPBF Pin Configuration
| Pin 1 | VCC β Logic and low-side supply voltage (10 V to 20 V) |
| Pin 2 | IN β Logic input for high-side and low-side gate drive (CMOS/TTL compatible) |
| Pin 3 | SD β Shutdown input (logic-low disables both outputs per typical application) |
| Pin 4 | COM β Low-side return and IC ground reference |
| Pin 5 | LO β Low-side gate drive output (0.29 A source / 0.6 A sink) |
| Pin 6 | VS β High-side floating supply return (switch node, -5 V to +600 V) |
| Pin 7 | HO β High-side gate drive output (0.29 A source / 0.6 A sink) |
| Pin 8 | VB β High-side floating supply (bootstrap rail referenced to VS) |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
IRS2104STRPBF is suitable for 6 applications: Low-Power AC Motor Drive (Fans & Pumps), Switch-Mode Power Supply (SMPS) Half-Bridge, Fluorescent and HID Lighting Ballasts, Class D Audio Amplifier Output Stage, Solar Micro-Inverter / Optimizer, Induction Heating Cooktop Resonant Inverter.
Low-Power AC Motor Drive (Fans & Pumps)
The IRS2104STRPBF drives a 600 V half-bridge switching stage that energizes the windings of small single-phase or three-phase AC induction and BLDC motors used in fans, pumps, and small appliances. Its 0.29 A source / 0.6 A sink drive currents comfortably switch 600 V MOSFETs with Qg up to ~30 nC at 20-50 kHz PWM, while the integrated UVLO prevents hazardous half-bridge shoot-through if the bootstrap supply droops during low-duty-cycle startup. The shutdown pin (SD) lets a microcontroller gate the motor drive off within 200 ns in response to overcurrent or over-temperature faults. Compared to discrete bootstrap circuits, the IRS2104STRPBF saves four to six components and reduces PCB area by roughly 40 percent in a typical 200 W appliance drive.
Recommended
Switch-Mode Power Supply (SMPS) Half-Bridge
In 110/220 VAC-line-rectified half-bridge or full-bridge SMPS converters up to ~300 W, the IRS2104STRPBF provides the level-shifted high-side drive and low-side drive from a single logic input, eliminating the need for an auxiliary high-side supply. Its 600 V VS rating covers a 400 V PFC output bus with 50 percent safety margin, and 35 ns rise / 70 ns fall times minimize switching losses in 100 kHz hard-switched stages. The shutdown pin interfaces directly to a PWM controller fault output, instantly disabling both gates on OCP or OVP events. Compared to using two low-side drivers and a discrete bootstrap network, the IRS2104STRPBF reduces gate-drive BOM by 60 percent and improves noise immunity through integrated HVIC isolation.
Recommended
Fluorescent and HID Lighting Ballasts
The IRS2104STRPBF is widely used in electronic ballasts for fluorescent tubes, compact fluorescent lamps (CFL), and high-intensity discharge (HID) lamps, where it switches a resonant half-bridge LC network at 30-100 kHz. Its 600 V rating handles the rectified 220 VAC bus after PFC, and the 150 ns propagation delay keeps the high-side and low-side drive well synchronized to avoid transformer saturation. Low quiescent current (150 uA typical) supports ballast standby power requirements below 1 W. The shutdown pin can be tied to the lamp-end-of-life detection comparator to disable the ballast on filament failure, preventing hazardous overheating. Compared to bipolor-transistor discrete drivers, the IRS2104STRPBF halves ballast component count.
Recommended
Class D Audio Amplifier Output Stage
In Class D audio amplifiers, the IRS2104STRPBF drives the half-bridge output stage that switches at 250-500 kHz to produce a PWM audio waveform later filtered to recover the analog signal. Its 35 ns rise / 70 ns fall times reduce crossover distortion and switching loss in the 600 V MOSFETs, while the 600 V VS tolerance allows direct use in 400 V audio bus designs for high-power PA systems. The shutdown pin provides a hardware mute function that pulls both outputs low within microseconds, eliminating click-and-pop on power-up and power-down. Compared to gate-drive transformers, the IRS2104STRPBF reduces audio amplifier BOM cost by 30-40 percent and eliminates transformer core saturation risks.
Recommended
Solar Micro-Inverter / Optimizer
The IRS2104STRPBF drives the half-bridge stage in sub-500 W micro-inverters and DC-DC optimizers used in residential solar installations, where a 600 V rating easily covers the 60-cell panel open-circuit voltage plus margin. Its industrial temperature grade (-40C to +150C junction) suits outdoor NEMA-rated enclosures exposed to direct sunlight. The shutdown pin can be tied to a PV arc-fault detector to interrupt the converter within 1 ms, meeting UL 1741 arc-fault protection requirements. Compared to bootstrap-pump discrete designs, the IRS2104STRPBF simplifies the BOM to 2 MOSFETs, 1 IC, and 1 bootstrap capacitor per leg, reducing micro-inverter cost by roughly 20 percent.
Recommended
Induction Heating Cooktop Resonant Inverter
In 1-3 kW induction cooktops, the IRS2104STRPBF drives the resonant half-bridge that delivers 20-50 kHz AC to the heating coil through an LC tank. Its 600 V VS rating tolerates the resonant overshoot of an unloaded coil, and the 150 ns propagation delay keeps the high-side and low-side switching tightly aligned, preventing destructive shoot-through. The SD pin interfaces to the pan-presence detector and over-temperature sensor for instant shutdown when cookware is removed or the coil overheats. Compared to IGBT discrete drivers, the IRS2104STRPBF enables 25 percent higher switching frequency, reducing coil size and audible noise in the final cooktop.
Recommended
Recommended Products Summary
Engineering reference data for IRS2104STRPBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRS2104SPBF | IRS2110SPBF | IRS2124SPBF | IRS2186SPBF | IRS2302STRPBF | TPG2104 |
|---|---|---|---|---|---|---|---|
| Package | SOIC-8 | SOIC-8 - same | SOIC-8 - same | SOIC-8 - same | SOIC-8 - same | SOIC-8 - same | SOIC-8 - same |
| Brand | Infineon | Infineon (same brand) | Infineon (same brand) | Infineon (same brand) | Infineon (same brand) | Infineon (same brand) | Topdiode (cross brand) |
| Topology | Half-Bridge (HS+LS, dependent) | Half-Bridge (HS+LS, dependent) | Half-Bridge (HS+LS, dependent) | Half-Bridge (HS+LS, dependent) | Half-Bridge (HS+LS, independent) | Half-Bridge (HS+LS, independent) | Half-Bridge (HS+LS, dependent) |
| High-Side Offset Voltage | -5 V to +600 V | -5 V to +600 V | -5 V to +600 V | -5 V to +600 V | -5 V to +600 V | -5 V to +600 V | -5 V to +600 V |
| VCC Supply Range | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V | 10 V to 20 V |
| Source / Sink Current (typ.) | 0.29 A / 0.6 A | 0.29 A / 0.6 A | 0.29 A / 0.6 A | 0.29 A / 0.6 A | 0.29 A / 0.6 A | 0.29 A / 0.6 A | 0.29 A / 0.6 A |
| Propagation Delay (typ.) | 150 ns | 150 ns | 150 ns | <150 ns (faster variant) | [DATA_NEEDED] | [DATA_NEEDED] | 150 ns |
| Shutdown Pin (SD) | Yes | Yes | No | Yes | No | No | Yes |
| Independent HS/LS Inputs | No (dependent) | No (dependent) | No (dependent) | No (dependent) | Yes (independent) | Yes (independent) | No (dependent) |
| Industrial Temperature Range | -40C to +125C (junction to +150C) | -40C to +150C | -40C to +150C | -40C to +150C | -40C to +150C | -40C to +150C | -40C to +125C |
Key Differentiators
- Integrated shutdown pin for hardware fault gating (vs IRS2110SPBF)
- Broad second-source ecosystem in 8-SOIC (vs TPG2104 (Topdiode))
- Industrial-grade qualification with 600 V VS rating (vs IRS2124SPBF (Infineon))
Design Notes
Bootstrap supply design is the most critical detail in any half-bridge gate-driver circuit using the IRS2104STRPBF. Use a fast-recovery (trr < 100 ns) bootstrap diode such as the UF4007 or a dedicated 600 V SMD diode, and a ceramic bootstrap capacitor of 0.1 uF to 1 uF X7R sized so VBS stays above the UVLO threshold (typically 8-9 V) for the minimum on-time of the high-side switch. At 20 kHz with 50% duty cycle and 0.29 A source, a 0.47 uF cap typically suffices for Qg up to 30 nC. The diode Vbr should be at least 600 V to block the full bus voltage when the high-side is off.
Place the bootstrap capacitor and diode within 5 mm of pins 7 (HO) and 8 (VB) of the IRS2104STRPBF, and use a 0.1 uF ceramic bypass directly on pin 1 (VCC) to pin 4 (COM). The high-side gate-drive loop (HO-VB-capacitor-VS) should be kept to a minimum area to limit parasitic inductance that causes gate ringing and possible Miller-induced turn-on. A 4-layer PCB with a continuous ground plane on layer 2 directly under the SOIC-8 footprint is recommended to keep dv/dt-induced ground bounce below 1 V at the COM pin.
A common pitfall when using the IRS2104STRPBF is exceeding the VS to VB voltage rating of +20 V during high-side switching transients. If the VS node rings above 20 V above VB at turn-off, the internal high-side driver can latch up or suffer permanent damage. Add a 10 V Zener or TVS clamp (e.g., SMBJ10A) between VS and VB if the bus voltage exceeds 400 V or if long cable/leads to the half-bridge cause overshoot. Also, do not leave the SD pin floating; tie it to VCC through a 10 kohm pull-up if unused so noise does not cause spurious shutdowns.
Estimated: the IRS2104STRPBF in 8-SOIC dissipates roughly 50-100 mW per MHz of switching frequency at 50% duty cycle driving 30 nC gates. At 100 kHz with VCC=15V, total dissipation is approximately 50-80 mW, well within the SOIC-8 thermal envelope (theta_JA around 150 C/W on 1 sq inch of 2-layer copper). For high-frequency designs above 200 kHz or hot environments above 70C ambient, increase PCB copper area to at least 1 sq inch or upgrade to the 8-PDIP variant (IRS2104PBF) for ~50 percent better thermal performance.
Compliance Information
RoHS compliant per Infineon datasheet PbF suffix. Industrial-grade qualification (not AEC-Q100 qualified for automotive). MSL2 per JEDEC J-STD-020. Halogen-free status not explicitly stated in retrieved web data.
