BSS816NWH6327XTSA1 - 20V 1.4A N-Ch OptiMOS MOSFET | Infineon
N.º de pieza: BSS816NWH6327XTSA1 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $0.46 | $0,46 |
| 10 | $0.39 | $3,90 |
| 100 | $0.27 | $27,00 |
| 500 | $0.21 | $105,00 |
| 1.000 | $0.18 | $180,00 |
| 3.000 | $0.14 | $420,00 |
BSS816NWH6327XTSA1 Descripción general
A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled three-terminal device used for switching and amplification. In the broader component taxonomy, the BSS816NW sits as a discrete semiconductor -> transistor -> MOSFET -> small-signal N-channel MOSFET -> power management building block. Small-signal MOSFETs like this one are optimized for low-current, high-frequency switching rather than high-power conversion.
Key features include an ultra-low threshold voltage optimized for 1.8V and 3.3V logic-level drive, low on-resistance per unit area thanks to the OptiMOS 2 trench process, fast switching performance for DC-DC converter and load-switch roles, and an integrated ESD-protected gate. The SOT-323 footprint measures only 2.0mm x 1.25mm, enabling dense board layouts. The device is qualified to AEC-Q101 for automotive reliability stress.
Technically, the OptiMOS 2 process uses a trench-gate architecture that minimizes R DS(on) x Qg figure of merit, the key indicator of switching loss. At 4.5V gate drive the part achieves its rated 160 mOhm R DS(on) max, while still switching usefully at 1.8V VGS for direct connection to GPIO outputs of microcontrollers and low-power SoCs.
Typical applications include load switching in portable and battery-powered devices, DC-DC converter synchronous rectifier or low-side switch, battery protection and charging path control in wearables, USB power switch rails, and small motor or solenoid drivers in consumer and automotive subsystems. Its AEC-Q101 qualification also makes it suitable for body electronics and infotainment auxiliary rails.
When designing with this part, place the gate pull-down resistor (typically 10k to 100k) close to the gate pin to prevent inadvertent turn-on from leakage currents. Keep the source-return and gate-loop areas small to minimize switching transients and ringing.
This page synthesizes Infineon datasheet parameters, distributor pricing tiers, and application context not consolidated on any single vendor page.
Alternativas directas para BSS816NWH6327XTSA1 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con BSS816NWH6327XTSA1 (mismo factor de forma y huella) — difiere en Package, Technology, Drain-Source Voltage (VDS), Operating Temperature Range, MSL Level.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
BSS816NWH6327
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
BSS816NW
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
BSS816NWH6327XT
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
BSS816NWH6327XTSA1 Valores máximos y características eléctricas
| Manufacturer | Infineon Technologies |
| Part Family | BSS816NW (OptiMOS 2 Small-Signal) |
| Tipo de transistor | MOSFET, N-Channel |
| Drain-Source Voltage (VDS) | 20 V |
| Continuous Drain Current (ID) at TA=25C | 1.4 A |
| RDS(on) max @ VGS=4.5V | 160 mOhm |
| Power Dissipation (PD) at TA=25C | 500 mW |
| Rango de temperatura de funcionamiento | -55C to +150C |
| Encapsulado | SOT-323 (PG-SOT323), 3-pin |
| Tipo de montaje | Surface Mount |
| Qualification | AEC-Q101 (Automotive) |
| Technology | OptiMOS 2 trench MOSFET |
| ESD Protection | Yes (integrated, per Infineon datasheet) |
| RoHS / Lead-Free | RoHS compliant, lead-free |
| Nivel MSL | 1 |
Configuración de pines de BSS816NWH6327XTSA1
| Pin 1 | Gate (G) — MOSFET gate control input; connect to driving logic with optional pull-down resistor |
| Pin 2 | Source (S) — MOSFET source; typically tied to ground for low-side switching or to load for high-side |
| Pin 3 | Drain (D) — MOSFET drain; main current-carrying terminal, typically the switched node |
Aplicaciones típicas
BSS816NWH6327XTSA1 es adecuado para 6 aplicacións: Battery Load Switch in Portable Devices, DC-DC Converter Synchronous Rectifier, USB Power Switch Rail Control, Automotive Body Electronics Load Driver, LED Driver Low-Side Switch, IoT Sensor Power Gating.
Battery Load Switch in Portable Devices
The BSS816NWH6327XTSA1 fits battery load-switch roles in portable and wearable electronics because of its 1.4A continuous drain current, 160 mOhm RDS(on) at 4.5V VGS, and sub-1.5V gate threshold. Designers typically place it between the Li-ion cell and downstream regulators, driven directly by a microcontroller GPIO. Its 20V VDS rating provides ample margin over 4.2V fully-charged Li-ion, while the SOT-323 footprint (2.0x1.25mm) enables dense board layouts. The integrated ESD protection on the gate reduces external TVS component count.
Recomendado
DC-DC Converter Synchronous Rectifier
The BSS816NWH6327XTSA1 serves as the low-side synchronous rectifier in step-down converters up to 1.4A load. Its 160 mOhm RDS(on) and fast switching transition minimize body-diode conduction loss, improving overall converter efficiency by 2-4% versus diode rectification. The OptiMOS 2 process keeps gate charge (Qg) low enough to permit switching frequencies up to 1 MHz in compact designs. With 20V VDS the part handles 5V and 12V input rails with adequate derating margin for converter transients.
Recomendado
USB Power Switch Rail Control
The BSS816NWH6327XTSA1 enables VBUS power-switching in USB Type-C and USB 2.0 downstream ports, where its 1.4A ID comfortably exceeds the 0.5A/0.9A/1.5A Type-C default-current advertisements. The logic-level gate drive allows direct GPIO control without level shifters, while 160 mOhm RDS(on) keeps voltage drop to ~80mV at 0.5A load (well within USB 5V +/-5% tolerance). Its SOT-333 SOT-323 small outline is ideal for cramped connector PCBs.
Recomendado
Automotive Body Electronics Load Driver
AEC-Q101 qualification makes the BSS816NWH6327XTSA1 suitable for non-safety automotive body-electronics loads such as interior lighting, mirror adjusters, and auxiliary infotainment rails. Its 20V VDS handles 12V automotive load-dump events (up to ~35V transient when clamped externally). At 1.4A continuous, the part can drive small solenoids, relays, or LED strings; designers typically add a TVS for full load-dump compliance and use a gate pull-down resistor to prevent floating-gate turn-on during cold-crank.
Recomendado
LED Driver Low-Side Switch
The BSS816NWH6327XTSA1 acts as a low-side switch for small constant-current LED drivers in indicator and backlight applications. PWM dimming up to 1 kHz is supported thanks to low gate charge, with the 160 mOhm RDS(on) limiting conduction loss to under 60mW at typical 600mA LED currents. The 20V VDS provides headroom for 5V or 12V LED strings, while the SOT-323 SMD package simplifies hand-rework during prototyping. A gate resistor of 100 ohm is typically recommended to slow edge rates and reduce EMI.
Recomendado
IoT Sensor Power Gating
The BSS816NWH6327XTSA1 enables ultra-low-power sleep-mode gating for IoT sensors and MCUs, where its 1.5V VGS(th) ensures full turn-off at 0V and full turn-on at 1.8V GPIO levels. Quiescent leakage current is in the nanoamp range, contributing minimal sleep current drain. Designers wire the MOSFET between the battery and the sensor's VDD rail, with the MCU GPIO driving the gate to wake/sleep the load. The SOT-323 footprint saves board space in coin-cell powered designs where every square millimeter counts.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para BSS816NWH6327XTSA1 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | BSS816NWH6327 | BSS816NW | BSS816NWH6327XT |
|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | SOT-323 (PG-SOT323) | SOT-323 - same | SOT-323 - same | SOT-323 - same |
| VDS max | 20 V | 20 V | 20 V | 20 V |
| ID continuous @ TA=25C | 1.4 A | 1.4 A | 1.4 A | 1.4 A |
| RDS(on) max @ VGS=4.5V | 160 mOhm | 160 mOhm | 160 mOhm | 160 mOhm |
| Power Dissipation (PD) | 500 mW | 500 mW | 500 mW | 500 mW |
| Qualification | AEC-Q101 | AEC-Q101 | AEC-Q101 | AEC-Q101 |
| Technology | OptiMOS 2 trench | OptiMOS 2 trench | OptiMOS 2 trench | OptiMOS 2 trench |
Diferenciadores clave
- OptiMOS 2 technology delivers low RDS(on) at logic-level gate drive (frente a Industry standard 2N7002 in SOT-23)
- AEC-Q101 automotive qualification (frente a Consumer-grade SOT-323 MOSFETs)
- Compact SOT-323 footprint with 1.4A current capability (frente a BSS84 P-channel SOT-323)
Notas de diseño
The BSS816NWH6327XTSA1 SOT-323 package dissipates a maximum of 500 mW at TA=25C, derating to roughly 250 mW at 70C ambient. Estimated: with theta_JA of approximately 320 C/W for a minimal JEDEC 1sq-in 1oz copper pad, full-power operation is feasible only on boards with adequate copper. For sustained 1A+ loads, attach multiple thermal vias under the drain pad or shift to a DPAK-packaged MOSFET.
Keep the high-current drain loop area (drain to load, load to ground, ground to source) as small as practical to minimize parasitic inductance that causes ringing during switching transitions. The gate loop should be kept short as well; place the gate drive resistor within 5mm of the gate pin. Estimated trace inductance for a 10mm copper trace is approximately 5-8 nH, which combined with Ciss can produce ringing above 100MHz.
Do not drive the gate from a high-impedance source without a defined default state - floating gates can partially turn on the MOSFET, causing unexpected battery drain. Always include a 10k-100k gate pull-down resistor to ensure the MOSFET stays off when the MCU is in reset. Also verify that VGS does not exceed the absolute maximum rating of +/-12V (per industry standard for small-signal MOSFETs); many gate drivers produce overshoot that can damage the gate oxide.
SOT-323 land pattern requires careful pad design to ensure reliable solder joints. Use non-solder-mask-defined (NSMD) pads with a 0.3mm pad width and 0.5mm length, per IPC-7351. Avoid placing vias in the pad; if unavoidable, tent and cap them to prevent solder wicking. A 0.1mm-thick stencil with 1:1 aperture ratio is recommended for reflow.
Información de cumplimiento
AEC-Q101 qualified per Infineon product page; RoHS compliant and halogen-free per DigiKey environmental data
