BSS816NWH6327XTSA1 vs BSS806NH6327XTSA1 Comparación
Comparación detallada lado a lado de BSS816NWH6327XTSA1 por Infineon y BSS806NH6327XTSA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
BSS806NH6327XTSA1 - 20V N-Ch OptiMOS 2 MOSFET, SOT-23 | Infineon
BSS806NH6327XTSA1 ✓ ActivoComparación de especificaciones
| Parámetro | BSS816NWH6327XTSA1 | BSS806NH6327XTSA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,14 | $0,19 |
| Manufacturer | Infineon Technologies | — |
| Part Family | BSS816NW (OptiMOS 2 Small-Signal) | — |
| Tipo de transistor | MOSFET, N-Channel | — |
| Drain-Source Voltage (VDS) | 20 V | 20 V |
| Continuous Drain Current (ID) at TA=25C | 1.4 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | — |
| RDS(on) max @ VGS=4.5V | 160 mOhm | — |
| RDS(on) max @ VGS=2.5V | [DATA_NEEDED: RDS(on) at 2.5V] | — |
| Power Dissipation (PD) at TA=25C | 500 mW | — |
| Rango de temperatura de funcionamiento | -55C to +150C | -55 C to +150 C (junction) |
| Encapsulado | SOT-323 (PG-SOT323), 3-pin | PG-SOT23-3 (SOT-23-3) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 (Automotive) | — |
| Technology | OptiMOS 2 trench MOSFET | OptiMOS 2 (trench MOSFET) |
| ESD Protection | Yes (integrated, per Infineon datasheet) | — |
| RoHS / Lead-Free | RoHS compliant, lead-free | — |
| Nivel MSL | 1 | 1 (per JEDEC J-STD-020) |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID, Ta) | — | 2.3 A |
| Drain-Source On-Resistance (RDS(on) max) | — | 57 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | — | 1.8 V rated (logic level) |
| Gate Drive (recommended VGS) | — | 1.8 V to 10 V |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: typical Qg] |
| Power Dissipation (PD, Ta) | — | 500 mW |
| Estado RoHS | — | Compliant (Pb-free plating) |
| Automotive Qualification | — | AEC-Q101 qualified |