BSZ340N08NS3GATMA1 - 80V 23A OptiMOS 3 | Infineon
N.º de pieza: BSZ340N08NS3GATMA1 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $0 | $0,00 |
| 10 | $0 | $0,00 |
| 100 | $0 | $0,00 |
| 500 | $0 | $0,00 |
| 1.000 | $0 | $0,00 |
BSZ340N08NS3GATMA1 Descripción general
A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate to control current between its drain and source. This N-channel device belongs to the MOSFET, discrete semiconductor, and power-switch hierarchy. Low RDS(on) reduces conduction loss, while the 80 V drain-source rating supports common low-voltage power-conversion, load-switch, and motor-control circuits.
Key verified features include a maximum drain-source voltage of 80 V, maximum drain current of 6 A at Ta and 23 A at Tc, and RDS(on) of 34 mOhm at VGS = 10 V and ID = 12 A. The listed gate threshold is 3.5 V at 12 uA, total gate charge is 9.1 nC at 10 V, and output capacitance is 630 pF at 40 V. Its junction-temperature range is -55C to +150C.
The OptiMOS 3 process targets low resistance and high switching efficiency in compact power stages. The PG-TSDSON-8 construction provides a small surface-mount footprint, but the exposed thermal pad and PCB copper must be used to remove heat. The listed ambient and case power dissipation values are 2.1 W at Ta and 32 W at Tc, subject to the manufacturer’s specified test conditions.
Typical applications include DC-DC converters, synchronous rectifiers, motor drivers, battery power paths, load switches, and compact consumer or industrial equipment. The 80 V rating is appropriate for low-voltage rails, but designers must account for switching transients, gate drive voltage, current pulses, and junction temperature.
Layout is critical in high-current switching circuits. Place the gate resistor and driver close to the gate, provide a low-induction source return, use multiple PCB vias for the exposed pad, and keep the switching loop small. Confirm RDS(on) at the actual gate voltage rather than assuming the 10 V condition applies to a 4.5 V or 5 V drive.
This product page combines verified distributor and manufacturer data with application guidance, replacement criteria, and design notes. It emphasizes the distinction between a datasheet replacement and a truly pin-compatible, thermally valid drop-in MOSFET.
Alternativas directas para BSZ340N08NS3GATMA1 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con BSZ340N08NS3GATMA1 (mismo factor de forma y huella) — difiere en Channel Type, Package, Technology.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
BSZ340N08NS3-G
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
BSC340N08NS3GATMA1
✅ Sustitución directa✓ En stock
$0.81 / unidad
Ver hoja de datos →BSZ340N08NS3GATMA1 Valores máximos y características eléctricas
| Channel Type | N-channel |
| Drain-Source Voltage VDS | 80 V maximum |
| Continuous Drain Current ID | 6 A at Ta; 23 A at Tc |
| RDS(on) | 34 mOhm maximum at VGS = 10 V, ID = 12 A |
| Technology | OptiMOS 3 |
| Tensión umbral de puerta | 3.5 V at 12 uA |
| Total Gate Charge Qg | 9.1 nC at 10 V |
| Output Capacitance Coss | 630 pF at 40 V |
| Power Dissipation at Ta | 2.1 W |
| Power Dissipation at Tc | 32 W |
| Junction Temperature Range | -55C to +150C |
| Encapsulado | PG-TSDSON-8, 3.3 x 3.3 mm PQFN family package |
| Tipo de montaje | Surface mount |
| Manufacturer | Infineon Technologies |
| Estado RoHS | RoHS compliant |
Guía de configuración de pines de BSZ340N08NS3GATMA1 pg-tsdson-8, 3.3 x 3.3 mm pqfn family package
Configuración de pines para BSZ340N08NS3GATMA1 (encapsulado pg-tsdson-8, 3.3 x 3.3 mm pqfn family package). Este dispositivo de potencia presenta terminales de puerta, drenador y fuente. Para encapsulados no polarizados, consulte la hoja de datos del fabricante para conocer la orientación exacta del pin 1 y los detalles del footprint. Las aplicaciones habituales incluyen el diseño de fuentes de alimentación, el accionamiento de motores y la conmutación de cargas.
No hay datos detallados de patillaje disponibles para BSZ340N08NS3GATMA1.
Consulte la hoja de datos para ver la configuración completa de patillas.
Área de funcionamiento seguro
Aplicaciones típicas
BSZ340N08NS3GATMA1 es adecuado para 6 aplicacións: Low-Voltage DC-DC Converter, Synchronous Rectifier, Motor Drive and Low-Voltage Power Stage, Battery-Power Load Switch, Consumer Power Conversion, Automotive Low-Voltage Power Module.
Low-Voltage DC-DC Converter
The BSZ340N08NS3GATMA1 fits a low-voltage synchronous DC-DC switching stage because its verified 80 V VDS rating leaves margin for common 12 V, 24 V, and lower bus transients, while its maximum RDS(on) is 34 mOhm at VGS = 10 V. That resistance supports lower conduction loss when the device is used as a high-side or low-side switch. The 3.5 V gate-threshold listing does not itself guarantee full enhancement at the chosen drive voltage, so the gate-driver waveform should be checked against the manufacturer’s transfer characteristics. With 9.1 nC total gate charge at 10 V, switching loss and driver current also need to be included in efficiency calculations.
Recomendado
Synchronous Rectifier
The BSZ340N08NS3GATMA1 can serve in a synchronous rectifier when the converter’s drain voltage, current pulses, and switching frequency stay within the verified 80 V rating and thermal conditions. Its 34 mOhm maximum RDS(on) at 10 V is useful for reducing conduction loss during the conduction interval, while the 630 pF output capacitance at 40 V and 9.1 nC gate charge influence switching transitions. The design must prevent reverse current during dead time and account for package dissipation. Because the supplied excerpts do not include avalanche, body-diode, or complete dynamic specifications, those parameters should be verified in the official datasheet before production use.
Recomendado
Motor Drive and Low-Voltage Power Stage
The BSZ340N08NS3GATMA1 is a candidate for low-voltage motor-drive switching where the MOSFET must handle repetitive current pulses and an 80 V maximum drain-source voltage. Its verified ratings distinguish 6 A at Ta from 23 A at Tc, so motor startup and stall conditions must be checked against both electrical and thermal limits rather than treated as continuous ratings. The 34 mOhm maximum RDS(on) can reduce conduction loss when driven at 10 V, but gate-drive voltage, dead time, current slew rate, and board inductance determine actual switching performance. Use a low-induction layout and a gate-driver supply compatible with the device’s required enhancement behavior.
Recomendado
Battery-Power Load Switch
The BSZ340N08NS3GATMA1 can be evaluated for battery-powered load switches where a compact surface-mount MOSFET is needed and the switched node remains below 80 V including transients. Its PG-TSDSON-8 construction helps reduce board area, but the exposed thermal pad and multiple PCB vias are necessary to transfer heat from the 2.1 W Ta and 32 W Tc dissipation figures under their specified conditions. The 3.5 V threshold at 12 uA is not a substitute for a complete transfer-characteristic check, particularly in battery systems that may use a restricted gate-drive range. Evaluate inrush current, reverse discharge, and short-circuit behavior before treating it as a load-switch replacement.
Recomendado
Consumer Power Conversion
The BSZ340N08NS3GATMA1 is suitable for compact consumer power-conversion stages when the design prioritizes low conduction resistance and a small surface-mount footprint. The verified 80 V rating is useful for systems that include elevated bus voltage or switching overshoot, while the maximum RDS(on) of 34 mOhm is specified at a clear 10 V, 12 A test condition. The 9.1 nC gate charge at 10 V must be balanced against the gate-driver capability and switching frequency. Thermal performance depends strongly on PCB copper around the PG-TSDSON-8 package, so evaluate the actual ambient temperature and enclosure rather than relying only on the catalog current ratings.
Recomendado
Automotive Low-Voltage Power Module
The BSZ340N08NS3GATMA1 may be considered for low-voltage automotive or industrial power modules only after qualification and transient validation. Its -55C to +150C junction-temperature specification and 80 V VDS rating provide useful starting limits, but the supplied data does not verify AEC-Q100 qualification. The 6 A Ta and 23 A Tc current ratings also need to be reconciled with load transients, wiring inductance, and automotive operating temperature. Use the manufacturer’s official automotive documentation when available, confirm the exact orderable suffix, and validate avalanche, switching, and thermal performance in the final module.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para BSZ340N08NS3GATMA1 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | BSZ340N08NS3-G | BSC340N08NS3GATMA1 |
|---|---|---|---|
| Drain-Source Voltage | 80 V maximum | 80 V maximum | 80 V maximum |
| Drain Current at Tc | 23 A | 23 A | 23 A |
| Technology | OptiMOS 3 | OptiMOS 3 | OptiMOS 3 |
| Package | PG-TSDSON-8 | PQFN 3.3 x 3.3 mm | PG-TDSON-8-5; exact footprint compatibility must be confirmed |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies |
Diferenciadores clave
- Verified Infineon OptiMOS 3 platform (frente a BSC340N08NS3GATMA1)
- 23 A case-current rating (frente a BSC340N08NS3GATMA1)
- Verified target-package identity (frente a BSC340N08NS3GATMA1)
- Clear 10 V RDS(on) condition (frente a BSC340N08NS3GATMA1)
Notas de diseño
Use the exposed pad as the primary heat path and connect it to a sufficiently large copper area with multiple thermal vias. The verified values list 2.1 W dissipation at Ta and 32 W at Tc, but neither value guarantees safe operation without the manufacturer’s test-board conditions. Estimated conduction loss for a chosen operating point is P = I²RDS(on); use the actual RDS(on) at the selected gate voltage rather than the 34 mOhm catalog maximum alone.
Place the gate driver and gate resistor close to the MOSFET gate, keep the drain and source current paths short, and provide a low-induction return through the source pins. The switching loop should be minimized because package inductance contributes to overshoot and ringing. Verify the exposed-pad connection against the official package drawing because the verified excerpts do not provide a complete pin map.
Do not select the part using only its 80 V rating or 23 A Tc current rating. Check VDS overshoot, SOA, avalanche capability, gate-drive amplitude, switching frequency, and thermal derating. The 3.5 V threshold at 12 uA is not proof of low RDS(on) at 3.5 V; the stated 34 mOhm maximum is specified at VGS = 10 V.
Keep high-current copper paths away from sensitive signal nodes and use a compact gate-drive loop. Add local input and output decoupling according to the converter topology, and route the exposed-pad thermal current path directly into the board copper. For replacement designs, compare land pattern, pin numbering, source connections, and thermal-pad geometry before treating a device as drop-in.
Información de cumplimiento
The verified distributor result includes a RoHS indication. REACH, AEC-Q100, lead-free, halogen-free, and conflict-minerals status are not established by the supplied data. Compliance should be confirmed against the exact manufacturer ordering code and current documentation.
