BSZ340N08NS3GATMA1 vs BSC340N08NS3GATMA1 Comparación
Comparación detallada lado a lado de BSZ340N08NS3GATMA1 por Infineon y BSC340N08NS3GATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | BSZ340N08NS3GATMA1 | BSC340N08NS3GATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,00 | $0,81 |
| Channel Type | N-channel | Single N-Channel |
| Drain-Source Voltage VDS | 80 V maximum | — |
| Continuous Drain Current ID | 6 A at Ta; 23 A at Tc | — |
| RDS(on) | 34 mOhm maximum at VGS = 10 V, ID = 12 A | — |
| Technology | OptiMOS 3 | OptiMOS 3 (N-Channel Trench) |
| Tensión umbral de puerta | 3.5 V at 12 uA | — |
| Total Gate Charge Qg | 9.1 nC at 10 V | — |
| Output Capacitance Coss | 630 pF at 40 V | — |
| Power Dissipation at Ta | 2.1 W | — |
| Power Dissipation at Tc | 32 W | — |
| Junction Temperature Range | -55C to +150C | — |
| Encapsulado | PG-TSDSON-8, 3.3 x 3.3 mm PQFN family package | PG-TDSON-8-5 (SuperSO8 5x6) |
| Tipo de montaje | Surface mount | Surface Mount |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Estado RoHS | RoHS compliant | — |
| Automotive Qualification | [DATA_NEEDED: automotive qualification status] | — |
| Lead-Free Status | [DATA_NEEDED: lead-free status] | — |
| REACH Status | [DATA_NEEDED: REACH status] | — |
| Pinout | [DATA_NEEDED: complete manufacturer pin mapping] | — |
| Safe Operating Area | [DATA_NEEDED: safe operating area graph] | — |
| Part Number | — | BSC340N08NS3GATMA1 |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID, Tc) | — | 23 A |
| Continuous Drain Current (ID, Ta) | — | 7 A |
| Pulsed Drain Current (IDM) | — | 92 A |
| On-State Resistance RDS(on) max @ VGS=10V | — | 34 mOhm |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) typical] |
| Gate-Source Voltage VGS max | — | +/- 20 V |
| Power Dissipation (Tc) | — | 32 W |
| Power Dissipation (Ta) | — | 2.5 W |
| Rango de temperatura de funcionamiento | — | -55C to +150C |
| Nivel MSL | — | 1 |
| RoHS / Lead-Free | — | RoHS compliant, lead-free |
| Total Gate Charge Qg typ | — | [DATA_NEEDED: Qg typical] |
| Avalanche Rating | — | Repetitive avalanche rated |