DMT10H015LCG-7 - 100V N-Channel MOSFET, 34A, V-DFN3333-8 | Diodes Inc
N.º de pieza: DMT10H015LCG-7 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $1.83 | $1,83 |
| 10 | $1.65 | $16,50 |
| 100 | $1.42 | $142,00 |
| 500 | $1.18 | $590,00 |
| 1.000 | $0.98 | $980,00 |
| 3.000 | $0.82 | $2.460,00 |
DMT10H015LCG-7 Descripción general
An N-Channel Enhancement Mode MOSFET (often abbreviated N-FET or NMOS) is a voltage-controlled switching transistor that conducts current between drain and source when a positive gate-to-source voltage exceeding the threshold is applied. Within the discrete components taxonomy, MOSFETs are a sub-category of transistors (MOS transistor -> transistor -> discrete semiconductor -> electronic component). N-Channel enhancement-mode parts are the dominant polarity in modern switching converters because they offer roughly 2-3x lower RDS(ON) per unit silicon area than equivalent P-Channel devices, which directly improves efficiency and thermal performance.
Key features of the DMT10H015LCG-7 include an industry-standard 100V drain-to-source breakdown voltage (BVDSS) covering the 61V-100V MOSFET class, low on-state resistance for reduced conduction losses, fast switching characteristics suitable for high-frequency DC-DC converters, and a thermally enhanced DFN package with an exposed die-attach pad that lowers junction-to-ambient thermal resistance. The 3.3mm x 3.3mm outline with a central thermal pad enables high current handling in space-constrained PCB layouts.
Technically, the device uses Diodes Incorporated's latest-generation trench MOSFET process to balance low RDS(ON) with low gate charge (Qg). This combination matters in switching applications because total switching loss scales with Qg x Vdrive x Fsw; a low Qg keeps the gate-drive burden on the controller manageable and allows higher switching frequencies without excessive driver losses. The V-DFN3333-8 footprint is JEDEC-compatible with standard DFN3333 land patterns used across the industry.
Typical applications include notebook battery power management (load switch, battery protection, OVP/OCP disconnect), synchronous rectification in isolated and non-isolated DC-DC converters, hot-swap circuits on 48V telecom rails, motor drive H-bridges for low-voltage brushless DC fans and small pumps, and high-side load switching in industrial 24V systems. The 100V rating provides ample derating margin on 24V industrial and 48V telecom buses.
When designing with this MOSFET, ensure the gate-drive voltage meets the Vgs(th) and plateau requirements of the controller; insufficient gate drive dramatically increases RDS(ON) and conduction loss. Place the gate-driver loop area and the power loop (input cap -> high-side FET -> low-side FET -> GND) as small as possible to minimize parasitic inductance that causes voltage overshoot and switching losses.
This page synthesizes distributor pricing (as of 2026-10-05), drop-in alternatives from the manufacturer portfolio, and practical design notes that go beyond the bare spec table found in the manufacturer datasheet.
Alternativas directas para DMT10H015LCG-7 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con DMT10H015LCG-7 (mismo factor de forma y huella) — difiere en FET Type, Package, Technology.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
DMT10H015LCG-13
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
DMT10H010LCG-7
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
DMT10H015LFG-7
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
NTMFS5C628NLT1G
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
BSZ0901NSIATMA1
✅ Sustitución directa✓ En stock
$0.34 / unidad
Ver hoja de datos →SiRA14DP
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
DMT10H015LCG-7 Valores máximos y características eléctricas
| FET Type | N-Channel Enhancement Mode |
| Drain-to-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (Ta) | 9.4 A |
| Continuous Drain Current (Tc) | 34 A |
| Power Dissipation (Ta) | 1 W |
| Encapsulado | V-DFN3333-8 (3.3 mm x 3.3 mm) |
| Tipo de montaje | Surface Mount |
| Temperatura de funcionamiento | -55C to +150C (junction, typical) |
| Technology | Trench MOSFET |
| Channel Polarity | N-Channel |
| Recuento de pines | 8 |
| Estado RoHS | Compliant |
| Manufacturer Part Family | DMT10H015LCG |
Configuración de pines de DMT10H015LCG-7
| Pin 1 | GATE — Gate drive input - apply VGS > VGS(th) to turn on |
| Pin 2 | SOURCE — Source terminal (low-side return) |
| Pin 3 | SOURCE — Source terminal (low-side return) |
| Pin 4 | SOURCE — Source terminal (low-side return) |
| Pin 5 | SOURCE — Source terminal (low-side return) |
| Pin 6 | SOURCE — Source terminal (low-side return) |
| Pin 7 | SOURCE — Source terminal (low-side return) |
| Pin 8 | DRAIN — Drain terminal (high-voltage switching node) |
Área de funcionamiento seguro (DC) - DMT10H015LCG-7
Aplicaciones típicas
DMT10H015LCG-7 es adecuado para 6 aplicacións: Notebook Battery Power Management, Load Switch and Hot-Swap Controller, Synchronous Rectification in DC-DC Converters, Motor Drive H-Bridge (Low-Voltage BLDC), High-Side Load Switch in Industrial 24V Systems, Battery Protection and ORing in UPS Systems.
Notebook Battery Power Management
The DMT10H015LCG-7 is purpose-built for notebook battery power management per Diodes Incorporated's product page description. Its 100V BVDSS provides generous derating on 19V adapter rails and protects against hot-plug transients, while the 9.4A continuous drain current at Ta handles battery protection FET and load-disconnect duty cycles. The V-DFN3333-8 (3.3mm x 3.3mm) footprint is thin enough for sub-20 inch z notebooks, and the exposed thermal pad maintains low junction temperature during sustained discharge. Low RDS(ON) directly extends battery run-time by reducing conduction loss on the order of hundreds of milliwatts compared to older 60V parts. Fast switching enables high-frequency buck/boost operation around the battery management IC, reducing the overall power-management BOM area.
Recomendado
Load Switch and Hot-Swap Controller
The DMT10H015LCG-7 functions as the high-current load-switch or hot-swap pass element in 24V industrial and 48V telecom rails. With 100V BVDSS it tolerates the inductive transients of long backplane traces, while its 34A Tc rating supports inrush currents during card insertion into a live backplane. The fast switching speed (driven by low Qg typical of trench MOSFETs) lets the upstream hot-swap controller regulate dV/dt to within eFuse or AMC specifications. The V-DFN3333-8 footprint matches standard 3.3mm x 3.3mm land patterns used across telecom ORing and power-distribution modules, simplifying PCB reuse between designs that span telecom, server, and industrial markets.
Recomendado
Synchronous Rectification in DC-DC Converters
In isolated and non-isolated buck/boost converters, the DMT10H015LCG-7 is used as either the synchronous rectifier or the high-side switch on the primary side. Its 100V breakdown supports 48V-input telecom bus converters with 2:1 step-down, where Vds transients stay well below the 100V limit. Low RDS(ON) reduces conduction loss proportional to load current - at 5A output the synchronous FET loss is typically below 100 mW, a substantial efficiency gain over diode rectification. The trench process delivers competitive FOM (RDS(ON) x Qg) which lets designers increase switching frequency to 500 kHz - 1 MHz and shrink magnetics, reducing overall converter footprint and BOM cost.
Recomendado
Motor Drive H-Bridge (Low-Voltage BLDC)
The DMT10H015LCG-7 forms one half of an H-bridge driving low-voltage brushless DC fans, small pumps, and 12V/24V motor loads. Its 9.4A Ta continuous rating covers most sub-30W BLDC applications, and the 100V VDS rating tolerates the back-EMF spikes of inductive loads. Fast body-diode reverse recovery (typical of trench MOSFETs) prevents shoot-through losses in complementary high-side and low-side switching. The DFN3333-8 footprint supports four FETs plus gate drivers on a 25mm x 25mm PCB for small form-factor motor modules, useful in robotics, appliance, and HVAC fan-control subsystems.
Recomendado
High-Side Load Switch in Industrial 24V Systems
In industrial 24V PLC and sensor systems, the DMT10H015LCG-7 is used as a high-side load switch protected by a charge-pump gate driver IC. Its 100V VDS rating tolerates 24V industrial bus spikes up to ~80V transient per IEC 61131-2 with margin to spare. The low RDS(ON) keeps conduction loss below 0.5W at typical 3A solenoid or actuator loads, which is critical for thermally constrained sealed enclosures. The V-DFN3333-8 footprint enables high-density channel-per-inch designs for multi-channel digital output modules in PLC racks.
Recomendado
Battery Protection and ORing in UPS Systems
The DMT10H015LCG-7 is used as the ORing FET or battery disconnect switch in low-to-medium power UPS and battery-backup modules. Its 100V VDS rating supports stacked battery packs up to 36V nominal, and the 34A Tc rating handles brief overload conditions during battery-to-inverter transfer. Low RDS(ON) minimizes voltage drop and heat dissipation, which is important for sealed UPS enclosures with limited airflow. The V-DFN3333-8 footprint fits in compact PCB modules alongside a battery monitor IC such as the AP9101, and the part is well-suited to fast switching needed for seamless transfer between mains and battery in on-line UPS topologies.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para DMT10H015LCG-7 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | DMT10H015LCG-13 | DMT10H010LCG-7 | DMT10H015LFG-7 | BSZ0901NS | NTMFS5C628NLT1G | SiRA14DP |
|---|---|---|---|---|---|---|---|
| Package | V-DFN3333-8 | V-DFN3333-8 - same | V-DFN3333-8 - same | V-DFN3333-8 - same | V-DFN3333-8 - same (Infineon PQFN 3.3x3.3) | V-DFN3333-8 - same (ON Semi DFN3333) | V-DFN3333-8 - same (Vishay PowerPAK 1212) |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated | Infineon | onsemi | Vishay Intertechnology |
| Drain-to-Source Voltage VDS (max) | 100 V | 100 V - same | 100 V - same | 100 V - same | 100 V - same | 60 V (lower rating, -40%) | 40 V (lower rating, -60%) |
| Continuous Drain Current (Ta) | 9.4 A | 9.4 A - same | Higher current (lower RDS(ON) variant) | 9.4 A - same | ~Comparable | Lower (60V rating, smaller die) | Lower (40V rating) |
| Polarity | N-Channel | N-Channel - same | N-Channel - same | N-Channel - same | N-Channel - same | N-Channel - same | N-Channel - same |
Diferenciadores clave
- Same-family drop-in options in identical V-DFN3333-8 footprint (frente a DMT10H015LCG-13)
- 100V breakdown covers 48V telecom bus with derating margin (frente a NTMFS5C628NLT1G (ON Semi, 60V))
- Diodes Incorporated design-win in notebook battery management (frente a BSZ0901NS (Infineon))
Notas de diseño
Estimated: at 9.4A continuous drain current and 1W Ta power dissipation, the V-DFN3333-8 thermal pad must be soldered to a copper land pattern of at least 25mm x 25mm on the top layer plus thermal vias to inner planes to keep junction temperature within the 150C maximum. Insufficient copper area is the most common cause of MOSFET thermal failure in production designs; always verify thermal performance with a real PCB, not a bare-device datasheet curve. Reference: Diodes Incorporated DFN3333 application note on PCB thermal design.
Place the gate-drive loop (gate resistor -> driver IC -> gate -> source return) and the power loop (input cap -> drain -> source -> input cap) as physically small and non-overlapping as possible to minimize parasitic inductance. In a buck converter, route the high-side drain via short and wide copper to the input cap; use the inner power plane as the source return instead of a long trace. Estimated: every additional 1 nH of power-loop inductance adds roughly 5V of Vds overshoot at 100A/us turn-off edge, which can exceed the 100V VDS rating.
Do not assume the V-DFN3333-8 pinout is identical across all manufacturers - the central exposed pad is sometimes source, sometimes drain depending on the part. Verify pin 1 location and gate pin against the specific datasheet mechanical drawing before PCB layout because a wrong pinout will short the gate driver on first power-up. Reference: Diodes Incorporated DMT10H015LCG datasheet mechanical drawing section.
Estimated: at 100V VDS and 9.4A continuous current, the theoretical maximum conduction loss with a typical RDS(ON) of ~25 mohm at 25C is roughly P = I^2 x RDS(ON) = 9.4^2 x 0.025 = 2.2W, which exceeds the 1W Ta power dissipation rating. This part must therefore be operated below 9.4A continuous in Ta conditions or with substantial PCB coppering to reduce thermal resistance. In switching applications, average switching loss is approximately 0.5 x Vds x Ids x (tr+tf) x Fsw; with tr+tf ~ 30 ns and Fsw 500 kHz, switching loss is about 0.75W at full current, again requiring PCB thermal management.
Información de cumplimiento
RoHS and REACH compliance per Diodes Incorporated product page. AEC-Q100 not applicable - this is a commercial/industrial grade part, not automotive qualified. Lead-free confirmed by Tape & Reel designation. Halogen-free status and MSL rating were not present in the provided web data and are marked [DATA_NEEDED].
