DMT10H015LCG-7 vs BSZ0901NSIATMA1 Comparación
Comparación detallada lado a lado de DMT10H015LCG-7 por Diodes Incorporated y BSZ0901NSIATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Diodes Incorporated
DMT10H015LCG-7 - 100V N-Channel MOSFET, 34A, V-DFN3333-8 | Diodes Inc
DMT10H015LCG-7 ✓ Activo
Comparación de especificaciones
| Parámetro | DMT10H015LCG-7 | BSZ0901NSIATMA1 |
|---|---|---|
| Marca | Diodes Incorporated | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,82 | $0,34 |
| FET Type | N-Channel Enhancement Mode | N-Channel |
| Drain-to-Source Voltage (VDS) | 100 V | — |
| Continuous Drain Current (Ta) | 9.4 A | — |
| Continuous Drain Current (Tc) | 34 A | — |
| Power Dissipation (Ta) | 1 W | — |
| Encapsulado | V-DFN3333-8 (3.3 mm x 3.3 mm) | PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Temperatura de funcionamiento | -55C to +150C (junction, typical) | — |
| Technology | Trench MOSFET | OptiMOS trench N-channel MOSFET |
| Channel Polarity | N-Channel | — |
| Recuento de pines | 8 | 8 |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | [DATA_NEEDED: MSL rating] | — |
| RDS(ON) at 10V VGS | [DATA_NEEDED: typical on-resistance value] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) value] | — |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Manufacturer Part Family | DMT10H015LCG | — |
| Manufacturer | — | Infineon Technologies |
| Part Number | — | BSZ0901NSIATMA1 |
| Series | — | OptiMOS 25V |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Ta=25C | — | 25 A |
| Continuous Drain Current (ID) at Tc=25C | — | 40 A |
| Power Dissipation (PD) at Ta=25C | — | 2.1 W |
| Power Dissipation (PD) at Tc=25C | — | 69 W |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| On-Resistance RDS(on) max @ VGS=10V | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) max @ VGS=4.5V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge Qg] |
| Rango de temperatura de funcionamiento | — | -55 C to +150 C (typical MOSFET range) |
| Packaging | — | Tape & Reel (ATMA1 suffix = 13-inch reel) |