FDD8424H - 40V Dual N&P-Ch PowerTrench MOSFET | onsemi
N.º de pieza: FDD8424H ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $1.12 | $1,12 |
| 10 | $0.96 | $9,60 |
| 100 | $0.74 | $74,00 |
| 500 | $0.58 | $290,00 |
| 1.000 | $0.45 | $450,00 |
| 3.000 | $0.39 | $1.170,00 |
FDD8424H Descripción general
What is a dual PowerTrench MOSFET? A PowerTrench MOSFET is an N-channel or P-channel enhancement-mode power MOSFET built on a trench-gate process that creates an undercut-effect channel under the gate oxide to lower on-state resistance. Dual PowerTrench MOSFETs integrate two dice - one N-channel and one P-channel - in one package, belonging to the power MOSFET family which itself is a sub-category of discrete semiconductors used in power conversion. Combining both polarities in a single DPAK footprint saves PCB area, simplifies gate drive routing, and is common in half-bridge and synchronous-rectifier topologies.
Key features include a 20 nC typical gate charge on the N-channel die at VGS = 10 V, a maximum gate threshold of 2.5 V (typical 1.8 V), and operation from a VGS range of ±20 V. The advanced PowerTrench process minimizes on-state resistance while maintaining superior switching performance, making the part well suited to high-frequency DC-DC converter and motor-driver half-stages.
The FDD8424H is built on an advanced PowerTrench process that minimizes on-state resistance per unit silicon area while keeping gate charge and switching losses low. The two dice share a common drain-tap on the DPAK tab, which simplifies PCB layout in half-bridge and synchronous-rectifier applications. According to the onsemi datasheet, the N-channel's figure of merit (RDS(on) × Qg) is balanced for high-frequency buck converter low-side switch operation.
Typical applications include synchronous buck converter low-side switches, DC motor H-bridge half-bridges, battery protection and load switching, and power-OR-ing circuits. The 40 V rating on both dice makes the FDD8424H well matched to 12 V automotive, 19 V adapter, and 24 V industrial rails where both high-side and low-side switching occur within the same half-bridge.
When designing with this device, calculate junction temperature using θJA of 50 °C/W on the JEDEC 1-square-inch test board and ensure the tab copper area exceeds the minimum footprint. The P-channel die shares the same drain tab as the N-channel, which simplifies thermal vias but constrains high-current ground-return routing.
This page synthesizes distributor pricing, drop-in alternatives, and practical half-bridge design notes not collected in the manufacturer datasheet, supporting cross-referencing with FDD8424H_F085A, FDD8424HF085A, and equivalent DPAK parts.
Alternativas directas para FDD8424H — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con FDD8424H (mismo factor de forma y huella) — difiere en Configuration, Operating Junction Temperature.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
FDD8424H_F085A
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
FDD8424HF085A
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
SUD50NP04-94-E3
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
SUD50NP04-94-T4-E3
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
DMC2400UV-7
✅ Sustitución directa✓ En stock
$0.14 / unidad
Ver hoja de datos →FDD8424H Valores máximos y características eléctricas
| Manufacturer | onsemi (formerly Fairchild Semiconductor) |
| Product Type | Dual N-Channel and P-Channel MOSFET |
| Process Technology | PowerTrench (advanced trench-gate) |
| Configuration | N-Channel and P-Channel, independent dice |
| Package Type | TO-252 (DPAK), surface mount |
| N-Channel VDS (Drain-Source Voltage) | 40 V |
| N-Channel Continuous Drain Current | 20 A |
| N-Channel RDS(on) max at VGS=10V | 24 mΩ |
| P-Channel VDS (Drain-Source Voltage) | -40 V |
| P-Channel Continuous Drain Current | -20 A |
| P-Channel RDS(on) max at VGS=-10V | 54 mΩ |
| Gate Charge N-Ch (Qg) typ at VGS=10V | 20 nC |
| Input Capacitance Ciss max | 1000 pF |
| Total Power Dissipation (Pd) | 1.3 W |
| Temperatura de unión de funcionamiento | -55 °C to +150 °C |
| Gate-Source Voltage (VGS) max | ±20 V |
| Tipo de montaje | Surface Mount |
| Estado RoHS | Compliant |
| Sin halógenos | Compliant per GlobalSpec listing |
| ECCN | EAR99 |
Configuración de pines de FDD8424H
| Pin 1 | G1 — Gate of N-Channel MOSFET |
| Pin 2 | G2 — Gate of P-Channel MOSFET |
| Pin 3 | S — Source (common source connection for both dice on certain layouts) |
| Pin 4 | D (Tab) — Drain tab - common Drain connection for both dice (N-Ch Drain and P-Ch Drain) |
Área de funcionamiento seguro - DC (DPAK, 25°C)
Aplicaciones típicas
FDD8424H es adecuado para 6 aplicacións: Synchronous Buck Converter Half-Bridge, DC Motor H-Bridge Half-Stage, Battery Protection and Load Switching, Automotive 12 V Load Switching, Power OR-ing and Hot-Swap Controller, Solar Charge Controller Load Stage.
Synchronous Buck Converter Half-Bridge
The FDD8424H is well-suited as the low-side and high-side switch pair in a 12 V-to-3.3 V / 5 V synchronous buck converter. The N-channel die handles the low-side synchronous rectification at 20 A continuous current and 24 mΩ RDS(on) at VGS=10 V, minimizing conduction loss at full load. The P-channel die, at -40 V VDS and 54 mΩ RDS(on), is suitable for high-side switching in low-duty-cycle or P-MOSFET high-side topologies, especially where a simple gate-drive referenced to VCC is preferred over a bootstrap N-MOSFET high-side drive. The DPAK footprint allows both dice to share a single thermal tab, simplifying PCB layout and using one heatsink. The N-Ch's 20 nC gate charge at VGS=10 V supports switching frequencies of 200-500 kHz typical for point-of-load converters without exceeding the SOA curves specified in the onsemi datasheet.
Recomendado
DC Motor H-Bridge Half-Stage
In a brushed DC motor H-bridge, the FDD8424H's matched N-channel and P-channel dice allow a compact half-bridge topology that drives the motor with only two gate signals referenced to the same supply rail. The N-Ch 20 A / 40 V die handles the low-side return path with 24 mΩ RDS(on), while the P-Ch -20 A / -40 V die handles the high-side path with 54 mΩ RDS(on), forming a complementary push-pull stage. Power dissipation at 5 A continuous motor current stays well within the 1.3 W package rating, and the 50 °C/W θJA on the JEDEC test board supports continuous operation without an external heatsink for sub-3 A loads. Designers must observe SOA for pulsed motor stall currents that can briefly exceed the DC rating, and use gate resistors to suppress ringing from the motor's inductive load.
Recomendado
Battery Protection and Load Switching
The FDD8424H is well-suited to battery protection circuits in 1S-2S lithium packs and load-disconnect switches in portable equipment. The N-channel die provides low-loss switching with 24 mΩ RDS(on), keeping voltage drop during 10 A discharge below 240 mV - acceptable for most battery management circuits. The P-channel die enables reverse-disconnect and over-discharge protection on the high side without requiring a charge pump, thanks to its 1.8 V typical gate threshold that is fully enhanced at 5 V VGS. Both dice at 40 V VDS provide sufficient margin against load-dump transients on 12 V lead-acid and 4S Li-ion systems. Designers must verify reverse-polarity protection through external blocking diodes, and use Kelvin-source PCB layout to mitigate current-sense errors from bond-wire inductance.
Recomendado
Automotive 12 V Load Switching
The FDD8424H_F085A (automotive-qualified F085A suffix variant) is intended for 12 V automotive body-electronics load switching - driving lamps, solenoids, and small motors. The N-channel 40 V VDS rating withstands ISO 7637-2 load-dump pulses up to 35 V on 12 V systems, and the P-channel -40 V die provides high-side switch capability for LED driver and relay drive circuits. The AEC-Q101 qualification on the F085A variant confirms reliability across the -40 °C to +125 °C automotive temperature range. The DPAK footprint supports wave-solderable and reflow-compatible manufacturing, and the 50 °C/W θJA allows continuous operation at moderate currents without external heatsinking. Per onsemi's F085A datasheet, the automotive variant includes additional process screening and traceability required by automotive OEMs.
Recomendado
Power OR-ing and Hot-Swap Controller
In redundant power OR-ing applications where two supplies share a load, the FDD8424H can be used as the OR-ing switch on the N-channel die, with the P-channel die providing reverse-current blocking. The N-Ch's 24 mΩ RDS(on) keeps voltage drop across the OR-ing path under 240 mV at 10 A, well within OR-ing controller requirements. The P-channel die's body-diode orientation can be used to block reverse current during supply failover, with the gate driven low to disconnect the failed rail. The 40 V VDS on both dice supports 24 V industrial bus OR-ing. Designers must choose controllers with proper turn-on delay to avoid simultaneous-conduction cross-conduction, and ensure SOA is respected during the failover transient window.
Recomendado
Solar Charge Controller Load Stage
The FDD8424H is suitable for the load-switch and PWM stage of small solar charge controllers in off-grid 12 V / 24 V photovoltaic systems. The N-channel 40 V die handles 20 A solar-array input switching with 24 mΩ RDS(on), minimizing conduction loss during peak solar hours. The P-channel die can be used for low-side load disconnect when the battery enters over-discharge, controlled directly by an MCU GPIO without a charge-pump supply. The 40 V VDS rating tolerates 24 V open-circuit solar panel voltages with margin, and the DPAK package is thermally robust enough to handle continuous sun-side dissipation with modest copper area. Designers must add reverse-blocking diodes to prevent night-time battery back-feed through the MOSFET body diodes.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para FDD8424H — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | FDD8424H_F085A | FDD8424HF085A | SUD50NP04-94-E3 | SUD50NP04-94-T4-E3 | DMC2400UV-7 |
|---|---|---|---|---|---|---|
| Brand | onsemi | onsemi | onsemi | Vishay | Vishay | Diodes Incorporated |
| Package | TO-252 (DPAK) | TO-252 (DPAK) - same | TO-252 (DPAK) - same | TO-252 (DPAK) - same | TO-252 (DPAK) - same | TO-252 (DPAK) - same |
| Configuration | Dual N+P-Channel | Dual N+P-Channel (same die) | Dual N+P-Channel (same die) | Single N-Channel | Single N-Channel | Dual N+P-Channel |
| N-Ch VDS (V) | 40 V | 40 V | 40 V | 40 V | 40 V | 20 V |
| P-Ch VDS (V) | -40 V | -40 V | -40 V | N/A (single N-Ch) | N/A (single N-Ch) | -20 V |
Diferenciadores clave
- Dual N+P-channel dice in single DPAK footprint (frente a SUD50NP04-94-E3)
- Higher voltage rating for 24V industrial rails (frente a DMC2400UV-7)
- Lower on-resistance at 40V rating tier (frente a DMC2400UV-7)
- Identical die available with AEC-Q101 qualification (frente a SUD50NP04-94-E3)
Notas de diseño
The DPAK package has θJA of approximately 50 °C/W on the JEDEC 1-square-inch 2-oz copper test board, per the onsemi FDD8424H datasheet. Estimated: at 20 A continuous drain current with VDS=20 V (worst-case SOA corner), dissipation is 1.3 W (matches the package rating); derate linearly for higher ambient temperatures above 25 °C. For continuous 20 A operation, expand copper area to at least 2 square inches or use a topside DPAK heatsink to keep Tj below 150 °C. The dual-die structure means both dice share the same drain tab, so thermal vias under the tab carry heat from both dice.
For best switching performance, place the gate-drive resistors within 5 mm of the G1 and G2 pins and use a small gate-source resistor (10-100 kΩ) on each gate to hold the MOSFET off during MCU reset. Use a 4-layer PCB with a dedicated ground plane to provide a low-impedance return for the high-di/dt source current during switching. Per onsemi layout guidelines, keep the high-current loop area (drain tab → load → source) small to minimize parasitic ringing that may exceed VDS ratings.
Do not exceed the maximum VGS rating of ±20 V - use a gate-source zener clamp or driver supply limit if bounce could push VGS beyond 20 V. Avoid driving the N-channel with VGS below 4.5 V at high load, as the 24 mΩ RDS(on) rating is specified at VGS=10 V and increases substantially at lower gate drive. In high-side P-channel applications, ensure the gate is actively pulled to source during off-state - floating gates can cause partial turn-on from drain dv/dt, leading to shoot-through losses in half-bridge topologies.
The 1000 pF input capacitance (Ciss max at VDS=20 V) means gate-drive circuits must source/sink peak currents of 1-2 A during switching transients. Use a dedicated gate driver IC rather than a microcontroller GPIO for switching frequencies above 50 kHz, and add a small series gate resistor (10-33 Ω) to damp ringing with the gate-driver output inductance. For 1 MHz+ switching, source-terminated gate-drive traces may be necessary to prevent transmission-line reflections.
Información de cumplimiento
Per GlobalSpec listing the FDD8424H is halogen-free and lead-free. The FDD8424H_F085A variant is AEC-Q101 automotive qualified. The standard FDD8424H is not AEC-Q100/Q101 qualified - choose the F085A suffix variant for automotive designs.
