DMC2400UV-7 - 20V Complementary N/P MOSFET Array | Diodes Inc
N.º de pieza: DMC2400UV-7 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $0.42 | $0,42 |
| 10 | $0.36 | $3,60 |
| 100 | $0.28 | $28,00 |
| 500 | $0.22 | $110,00 |
| 1.000 | $0.18 | $180,00 |
| 3.000 | $0.14 | $420,00 |
DMC2400UV-7 Descripción general
What is a MOSFET array? A MOSFET array is a single package that contains two or more discrete MOSFET transistors, often configured as a complementary pair (N-channel + P-channel) or as dual N-channel or dual P-channel devices. MOSFET arrays sit within the discrete semiconductor hierarchy of MOSFET -> transistor -> semiconductor device. By co-packaging both polarities, designers can build H-bridges, level shifters, and bidirectional load switches with a single IC footprint, reducing BOM count, parasitic inductance, and PCB area versus using two separate SOT-23 MOSFETs.
Key features include low on-state resistance (RDS(on) of 480 mOhm max at VGS = 4.5V, 200mA per the verified web data), low gate threshold voltage below 1V, low input capacitance, fast switching speed, and minimal input/output leakage. The SOT-563 package measures approximately 1.6mm x 1.6mm, making this part suitable for ultra-compact designs. Total package power dissipation is rated at 450mW under standard test conditions, and the device operates across the standard -55C to +150C junction temperature range.
The DMC2400UV uses trench MOSFET technology optimized for low RDS(on) while preserving switching performance, making it efficient for high-frequency DC-DC converter stages. The N-channel and P-channel devices share the same die platform, simplifying thermal management and ensuring matched switching characteristics for synchronous-rectifier topologies.
Typical applications include load switching in portable electronics, power management in battery chargers, signal-level shifting between rails, audio cross-over switching networks, and miniature DC motor driver stages. The complementary configuration is also commonly used in low-power H-bridge motor drivers and USB load-switch circuits.
When designing with this part, pay close attention to gate-drive voltage. Because the gate threshold is below 1V, a 3.3V GPIO can fully enhance the N-channel device; however, designers should confirm adequate VGS for the P-channel at the chosen load current. Place a 100nF ceramic bypass capacitor as close as possible to the common source node to suppress switching transients.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, helping engineers select and source the DMC2400UV-7 efficiently.
Alternativas directas para DMC2400UV-7 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con DMC2400UV-7 (mismo factor de forma y huella) — difiere en Configuration, Operating Junction Temperature.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
DMC2400UV-13
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
DMC2400UV-7R
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
DMC2400UV-7 Valores máximos y características eléctricas
| FET Type | N and P-Channel Complementary Pair |
| Drain-to-Source Voltage (Vdss) | 20 V |
| Continuous Drain Current (N-Ch) @ 25C | 1.03 A |
| Continuous Drain Current (P-Ch) @ 25C | 700 mA |
| RDS(on) Max @ VGS=4.5V, Id=200mA | 480 mOhm |
| Gate Threshold Voltage (Vgs(th)) | <1 V (low threshold) |
| Total Package Power Dissipation | 450 mW |
| Capacitancia de entrada | Low (per datasheet) |
| Switching Speed | Fast |
| Input/Output Leakage | Low |
| Temperatura de unión de funcionamiento | -55C to +150C |
| Tipo de montaje | Surface Mount |
| Encapsulado | SOT-563 |
| Configuration | Complementary Pair (N + P) |
| Estado RoHS | Compliant |
Configuración de pines de DMC2400UV-7
| Pin 1 | Source1 — Source of N-channel MOSFET (S1) |
| Pin 2 | Gate1 — Gate of N-channel MOSFET (G1) |
| Pin 3 | Drain1 — Drain of N-channel MOSFET (D1) |
| Pin 4 | Drain2 — Drain of P-channel MOSFET (D2) |
| Pin 5 | Gate2 — Gate of P-channel MOSFET (G2) |
| Pin 6 | Source2 — Source of P-channel MOSFET (S2) |
Área de funcionamiento seguro (N-Channel, DC)
Aplicaciones típicas
DMC2400UV-7 es adecuado para 7 aplicacións: Portable Load Switch, Battery Charger Power Path, Bidirectional Level Shifter, Miniature DC Motor Driver (H-Bridge), Audio Cross-Over Switching, USB Load Switch / Power Mux, LED Driver High-Side Switch.
Portable Load Switch
The DMC2400UV-7's complementary N+P configuration makes it well-suited for portable load-switch circuits that must turn a rail on/off while blocking reverse current. With a 20V VDS rating and 1.03A continuous drain current on the N-channel, it can switch 5V rails up to 1A with minimal voltage drop thanks to the 480 mOhm RDS(on). The sub-1V gate threshold allows direct 3.3V GPIO drive without a charge pump, reducing BOM in battery-powered designs.
Recomendado
Battery Charger Power Path
The DMC2400UV-7 fits battery charger power-path management because its integrated P-channel can block reverse current from the battery to the adapter, while the N-channel handles the active load path. Rated for 20V and 700mA continuous drain current on the P-channel, it supports 1S and small 2S Li-Ion/Li-Po charging architectures. The complementary topology simplifies the bill of materials and shrinks the charger footprint.
Recomendado
Bidirectional Level Shifter
In bidirectional logic level shifters between 1.8V and 5V rails, the DMC2400UV-7's complementary pair enables push-pull drive with a single IC. The low RDS(on) of 480 mOhm ensures sharp edges even at high data rates, while the sub-1V threshold supports low-voltage GPIO. Designers commonly use this topology for I2C, UART, and SPI bridging in mixed-voltage SoCs.
Recomendado
Miniature DC Motor Driver (H-Bridge)
The DMC2400UV-7 is well-suited for miniature H-bridge motor drivers driving small brushed DC motors under 700mA. The N-channel forms the low-side switches (1.03A rating) while the P-channel forms the high-side switches (700mA rating). Combined in one SOT-563 package, the array halves the PCB area of a discrete implementation. Add external flyback diodes for inductive kickback protection.
Recomendado
Audio Cross-Over Switching
The DMC2400UV-7's fast switching speed and complementary topology make it a candidate for low-power audio cross-over switching networks, where signals route between drivers or filter stages. The 20V VDS rating comfortably handles audio line levels, while the low RDS(on) preserves signal integrity. This application benefits from the matched switching characteristics of the integrated pair.
Recomendado
USB Load Switch / Power Mux
In USB load-switch and power-mux circuits, the DMC2400UV-7's N-channel acts as the main switch controlled by an enable signal, while the P-channel can implement reverse-current blocking to meet USB specification requirements. With 1.03A continuous drain current, it supports USB 2.0 high-power ports up to 500mA natively. The compact SOT-563 footprint is ideal for ultra-thin mobile and wearable designs.
Recomendado
LED Driver High-Side Switch
The DMC2400UV-7's P-channel half can serve as a high-side LED switch, enabling PWM dimming with a logic-level GPIO driving the gate. With 700mA continuous drain current and 20V VDS, it supports single-LED strings or small multi-LED arrays up to a few hundred milliamps. The matched switching characteristics of the integrated array ensure clean PWM edges without shoot-through.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para DMC2400UV-7 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | DMC2400UV-13 | DMC2400UV-7R |
|---|---|---|---|
| Package | SOT-563 | SOT-563 (same) | SOT-563 (same) |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| VDS Rating | 20 V | 20 V | 20 V |
| Continuous Drain Current (N-Ch) | 1.03 A | 1.03 A | 1.03 A |
| Continuous Drain Current (P-Ch) | 700 mA | 700 mA | 700 mA |
| RDS(on) Max @ 4.5V | 480 mOhm | 480 mOhm | 480 mOhm |
| Gate Threshold Voltage | <1 V | <1 V | <1 V |
| Power Dissipation | 450 mW | 450 mW | 450 mW |
| Reel Quantity | 3000 | 10000 | 3000 (reversed) |
Diferenciadores clave
- Integrated complementary N+P pair in single SOT-563 package (frente a DMC2400UV-13)
- Low gate threshold voltage below 1V (frente a DMC2400UV-7R)
- Matched N and P channel switching characteristics (frente a Discrete SOT-23 N+P MOSFET pair)
Notas de diseño
Estimated: At TA=25C with 450mW total package dissipation across both MOSFETs, the SOT-563 junction rises based on PCB copper area. Per datasheet, derate PD linearly to zero at TJ=150C, giving approximately 3.6mW/C derating factor. For designs near maximum dissipation, use thermal vias under the exposed pad and at least 100mm^2 of copper pour. Always compute TJ = PD x theta_JA + TA against the datasheet limit of 150C.
The SOT-563 package has six surface-mount leads on a 0.5mm pitch. Use a PCB land pattern that matches IPC-7351 nominal dimensions for SOT-563. Place input bypass capacitors within 2mm of the gate pins to minimize parasitic inductance, which becomes critical at switching frequencies above 1MHz. Keep high-current drain traces short and wide to limit voltage drops.
Critical: Although VGS(th) is below 1V, full enhancement of the N-channel at high drain currents requires VGS well above threshold - typically 4.5V or 10V per the RDS(on) specification. A 3.3V GPIO can turn the part on but RDS(on) may be 2-3x higher than the datasheet maximum. For the P-channel, VGS refers to source minus gate; ensure gate is pulled sufficiently below source. Always check SOA at worst-case VDS and ID combinations.
Información de cumplimiento
RoHS compliant and halogen-free per Diodes Incorporated product page. Not AEC-Q100 qualified - for automotive applications requiring AEC-Q101, review Diodes' automotive-grade MOSFET portfolio.
