FGA25N120ANTD - 1200V 25A NPT Trench IGBT | onsemi (Fairchild)
N.º de pieza: FGA25N120ANTD ⚠ Última compra| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $3.85 | $3,85 |
| 10 | $3.42 | $34,20 |
| 100 | $2.95 | $295,00 |
| 500 | $2.55 | $1.275,00 |
| 1.000 | $2.2 | $2.200,00 |
FGA25N120ANTD Descripción general
An IGBT (Insulated Gate Bipolar Transistor) is a three-terminal power semiconductor that sits hierarchically between a MOSFET and a bipolar power transistor. It is the workhorse device of medium- to high-voltage power conversion, used inside switch-mode power supplies, motor drives, induction heaters, welding inverters, and uninterruptible power systems. Compared to a MOSFET, an IGBT offers much lower conduction loss at 600-1700 V breakdown voltages, while compared to a bipolar transistor it requires only a small gate-drive current, making gate-drive design simple.
Key features of the FGA25N120ANTD include a typical VCE(sat) of 2.0 V at IC = 25 A and TC = 25 C, positive temperature coefficient for easy paralleling, low switching loss with Eoff typically 0.96 mJ at IC = 25 A, high avalanche ruggedness, and zero gate-charge design. The trench gate structure combined with NPT technology yields a tight parameter distribution and robust short-circuit behavior.
The FGA25N120ANTD is built on onsemi's proprietary NPT Trench process, which removes the buffer layer between the drift region and the P+ collector. This results in a square reverse-bias SOA, lower turn-off switching loss, and a positive temperature coefficient on VCE(sat) that simplifies parallel-operation thermal balancing. The robust body diode further supports inductive load switching.
Typical applications include induction heating, microwave ovens, resonant/soft-switching converters, welding equipment, solar inverters, and general-purpose high-voltage inverters up to 1200 V bus. The device is well-suited for circuits running at switching frequencies from a few kHz up to about 40 kHz in hard-switched topologies and up to several hundred kHz in zero-voltage-switching (ZVS) topologies.
When designing with this part, observe the maximum junction temperature of 150 C and ensure the switching frequency, gate resistor, and dv/dt snubber are tuned for the target topology. Adequate heatsinking is mandatory at high duty cycle; thermal resistance junction-to-case is typically 0.43 C/W. The anti-parallel diode should be used in bridge configurations, or an external fast-recovery diode added for hard-switched bridge legs.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet.
Alternativas directas para FGA25N120ANTD — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
FGA25N120ANTDTU
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
FGA25N120ANTDTU-F109
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
FGA25N120AN
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
STGW25H120DF2
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
IRGP20B120UD
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
IKW25N120T2
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
FGA25N120ANTD Valores máximos y características eléctricas
| Manufacturer | onsemi (formerly Fairchild Semiconductor) |
| Part Number | FGA25N120ANTD |
| Device Type | NPT Trench IGBT |
| Collector-Emitter Voltage (VCES) | 1200 V |
| Continuous Collector Current (IC) @ TC=25C | 50 A |
| Continuous Collector Current (IC) @ TC=100C | 25 A |
| Pulsed Collector Current (ICM) | 75 A |
| Gate-Emitter Voltage (VGES) | +/- 20 V |
| VCE(sat) typical @ IC=25A, TC=25C | 2.0 V |
| Turn-off Switching Loss (Eoff) typical @ IC=25A | 0.96 mJ |
| Temperatura de unión de funcionamiento | -55 C to +150 C |
| Thermal Resistance, Junction-to-Case (theta_JC) | 0.43 C/W (typical) |
| Encapsulado | TO-247-3 |
| Tipo de montaje | Through-Hole |
| Technology | NPT (Non-Punch-Through) Trench |
| Estado RoHS | Compliant |
| Configuration | Single IGBT (no co-pack diode) |
Configuración de pines de FGA25N120ANTD
| Pin 1 | Gate (G) — Gate control input; drive with 15 V typical VGE to achieve rated VCE(sat); threshold 5-6 V |
| Pin 2 | Collector (C) — Main current terminal; connects to high-voltage DC bus positive rail |
| Pin 3 | Emitter (E) — Main current return; connects to low-side of bridge leg or ground reference |
| Pin Tab | Collector (C) — Metal mounting tab; internally connected to Collector (Pin 2); mount to heatsink |
Reverse-Bias Área de funcionamiento seguro (RBSOA)
Aplicaciones típicas
FGA25N120ANTD es adecuado para 6 aplicacións: Induction Heating Cooktops, Microwave Oven Power Inverter, Welding Inverter (IGBT Bridge), Solar String Inverter, Uninterruptible Power Supply (UPS), Industrial Motor Drive (VFD).
Induction Heating Cooktops
The FGA25N120ANTD is well-suited for induction-heating cooktop inverters, where resonant LC tanks operate at 20-100 kHz and switch 1200 V bus rails at 25 A. Its 0.96 mJ typical Eoff keeps turn-off loss low across the heating cycle, while the positive VCE(sat) temperature coefficient supports paralleling multiple units to scale cooktop power above 3 kW. Placed in the half-bridge of a series-resonant tank with a heatsink of 1-2 C/W, the device sustains continuous conduction at TC = 100 C without derating. Engineers pair it with the NCP1396 resonant controller and rely on the body diode for the freewheeling period. The trench FTO gives an avalanche rating that survives the occasional tank detuning transient that occurs when a pan is lifted.
Recomendado
Microwave Oven Power Inverter
Microwave ovens use a 1200 V, 25 A IGBT to drive the magnetron via a high-voltage transformer and voltage-doubler rectifier. The FGA25N120ANTD delivers the required 25 A pulse current at 1200 V bus with a low 2.0 V VCE(sat), keeping conduction loss manageable in a small-form-factor appliance. Switching frequency around 20-40 kHz keeps transformer size acceptable while the 0.96 mJ Eoff preserves efficiency. The robust avalanche rating survives magnetron arc-back events, and the TO-247-3 package mounts to the magnetron-side heatsink that also cools the rectifier bridge. Designers typically operate one device per microwave module above 1000 W output.
Recomendado
Welding Inverter (IGBT Bridge)
Welding inverters for MMA and TIG applications use a 1200 V IGBT bridge switching 25-50 A average currents at 20-50 kHz. The FGA25N120ANTD serves as the main switching device on the primary side of the welding transformer, providing 1200 V VCES headroom for the rectified 220-380 V mains, low VCE(sat) for thermal margin, and high short-circuit withstand for arc strikes. The TO-247-3 package bolts directly to a 0.5-1 C/W heatsink, and the positive VCE(sat) coefficient supports paralleling two devices per switch position above 200 A welding output. The TO-247-3 long-lead variant (ANTDTU) is preferred in newer designs for lead-form compatibility. Engine designers pair the IGBT with the UC3846 current-mode controller and a digital panel for current setpoint.
Recomendado
Solar String Inverter
Solar string inverters operating from a 600-1000 V DC bus use a 1200 V IGBT bridge to feed the low-frequency transformer or the grid-tie filter. The FGA25N120ANTD provides the 1200 V breakdown margin needed for the maximum DC bus plus reactive overshoot, with a 25 A continuous rating that supports 10-15 kW residential string inverters. Its 0.96 mJ Eoff and trench FTO deliver inverter efficiencies above 96 percent at typical 16 kHz switching. The NPT structure eliminates the tail-current loss of older PT-IGBT designs, so the inverter can be cooled with a single aluminum extrusion heatsink. Outdoor reliability is reinforced by the wide -55 C to +150 C junction temperature range.
Recomendado
Uninterruptible Power Supply (UPS)
Online double-conversion UPS systems above 5 kW use 1200 V IGBTs in the inverter stage to synthesize 230 V AC from a battery DC bus. The FGA25N120ANTD supports the inverter bridge with 25 A continuous capability suitable for 8-10 kVA single-phase units. Its 0.43 C/W junction-to-case thermal resistance enables compact cooling, and the positive VCE(sat) coefficient allows simple paralleling for higher-power three-phase units. Switching frequency around 20 kHz balances transformer size and efficiency. Surge handling during inverter load steps is supported by the avalanche-rugged NPT structure, giving the UPS the reliability margin required for medical and data-center backup applications.
Recomendado
Industrial Motor Drive (VFD)
Variable-frequency drives controlling 380-480 V three-phase AC motors use 1200 V IGBTs in a six-pack or P2-module configuration. The FGA25N120ANTD, when paired with an external fast diode, drives AC induction motors up to 11 kW in hard-switched PWM at 4-16 kHz. Its 1200 V VCES comfortably exceeds the rectified 480 V mains peak with margin for reflected back-EMF. The 25 A rating supports 16-20 A motor current with thermal headroom, and the 0.43 C/W theta_JC enables cold-plate mounting. The robust short-circuit withstand protects against motor short-to-ground events. Designers pair the device with the IR2136 three-phase gate driver and rely on its undervoltage lockout for safe start-up.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para FGA25N120ANTD — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | FGA25N120ANTDTU | FGA25N120ANTDTU-F109 | FGA25N120AN | STGW25H120DF2 | IRGP20B120UD | IKW25N120T2 |
|---|---|---|---|---|---|---|---|
| Brand | onsemi | onsemi | onsemi | onsemi | STMicroelectronics | Infineon | Infineon |
| Package | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 (long lead) | TO-247-3 | TO-247-3 |
| VCES (V) | 1200 | 1200 | 1200 | 1200 | 1200 | 1200 | 1200 |
| Continuous IC @ TC=100C (A) | 25 | 25 | 25 | 25 | 25 | 20 | 25 |
| VCE(sat) typ @ 25A (V) | 2.0 | 2.0 | 2.0 | 2.0 | 1.95 | 1.95 | 1.8 |
| Co-pack Diode | No | No | No | No | Yes | Yes (co-pack FRED) | Yes |
| Eoff typical (mJ) | 0.96 | 0.96 | 0.85 | 0.80 | 0.90 | ||
| Technology | NPT Trench | NPT Trench | Trench | Trench + FRED | Trench Gen-2 | ||
| RoHS Compliant | No (Last Time Buy) | Yes | Yes | Yes | Yes |
Diferenciadores clave
- Higher continuous current at 100 C case than the cross-brand option (frente a IRGP20B120UD)
- Lower VCE(sat) at 25 A than STGW25H120DF2 (frente a STGW25H120DF2)
- Lower Eoff and lower VCE(sat) than older IKW25N120T2 (frente a IKW25N120T2)
- Identical die to FGA25N120ANTDTU drop-in successor (frente a FGA25N120ANTDTU)
Notas de diseño
Estimated: At VCE = 2.0 V and IC = 25 A continuous, conduction loss is 50 W. Adding 30 W switching loss at 20 kHz yields 80 W total dissipation. With theta_JC = 0.43 C/W, the junction-to-case temperature rise is approximately 34 C, so a heatsink of 0.5-1.0 C/W keeps TC below 100 C and TJ below 150 C. Mount the TO-247 tab with thermal compound and consider a clip or direct screw with proper torque to minimize thermal-interface resistance.
The FGA25N120ANTD does NOT include a co-pack anti-parallel diode. For half-bridge, full-bridge, or three-phase inverter legs, an external fast-recovery or SiC Schottky diode must be added in parallel with each IGBT. Using the intrinsic body diode in hard-switched bridge duty causes excessive reverse-recovery loss and EMI. Recommended companion: FFSH30120A SiC diode or RURG3020CC ultrafast rectifier for moderate-frequency designs.
Keep the gate-drive loop (Gate-Emitter) physically small to minimize stray inductance; use a gate resistor of 10-47 ohm and place a 10-22 ohm resistor in series with the gate-emitter pull-down path to control turn-off dV/dt. Add a local 0.1 uF ceramic bypass across VGE near the IGBT gate-emitter pins. For half-bridge legs, place the high-side and low-side IGBTs symmetrically around the DC-link bus to minimize commutation-loop inductance.
The FGA25N120ANTD is in Last Time Buy as of 2026-10-13 per onsemi. Designers starting new projects should use the FGA25N120ANTDTU (RoHS-compliant, identical die) instead. Existing production should qualify a second source from the alternatives list (STGW25H120DF2 or IKW25N120T2) to avoid single-source supply risk. Verify VCE(sat) and Eoff differences against the gate-driver timing budget before qualification.
Información de cumplimiento
FGA25N120ANTD is the original non-RoHS variant; the RoHS-compliant drop-in replacement is FGA25N120ANTDTU (same die). Reach compliance per onsemi product declaration. AEC-Q100 not applicable - this is an industrial-grade discrete IGBT, not an automotive-qualified part.
