GAN111-650WSBQ - 650V 97mOhm GaN FET TO-247 | Nexperia
N.º de pieza: GAN111-650WSBQ ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $12.49 | $12,49 |
| 10 | $11.86 | $118,60 |
| 100 | $10.62 | $1.062,00 |
| 500 | $9.79 | $4.895,00 |
| 1.000 | $9.42 | $9.420,00 |
GAN111-650WSBQ Descripción general
A GaN FET is a power transistor built on gallium nitride, a wide-bandgap (WBG) semiconductor with a bandgap of roughly 3.4 eV versus 1.1 eV for silicon. Within the power-semiconductor hierarchy (transistor -> FET -> wide-bandgap power transistor -> GaN HEMT), GaN devices switch faster and with lower switching losses than silicon MOSFETs or IGBTs, enabling higher-frequency power conversion with smaller magnetics.
The GAN111-650WSBQ combines Nexperia's high-voltage GaN HEMT H2 technology with an integrated low-voltage silicon MOSFET in a cascode configuration. The cascode stack delivers a true normally-off gate behavior, allowing the device to be driven with a conventional gate drive voltage of 10 V like a standard silicon MOSFET, simplifying gate-driver selection compared with direct-drive e-mode GaN parts.
Key differentiating specifications include the 97 mOhm RDS(on) figure of merit, the 650 V avalanche-classed drain rating, a wide operating temperature range of -55 C to +175 C, and the rugged TO-247 through-hole package that simplifies thermal design and prototyping compared with SMD GaN packages.
Typical applications include high-efficiency switched-mode power supplies (SMPS), totem-pole bridgeless power factor correction (PFC) stages, LLC resonant converters, solar / renewable-energy inverters, and servo or industrial motor-drive front ends where high-frequency, high-voltage switching directly reduces converter size and loss.
When designing with this device, minimize gate-loop and power-loop inductance, and provide a negative or zero-voltage gate turn-off to suppress dv/dt-induced turn-on; verify board layout against the manufacturer datasheet layout guidance for high-frequency GaN switching.
This page synthesizes distributor pricing, verified drop-in alternatives, pinout data, and practical GaN-specific design notes not consolidated on the manufacturer product page alone.
Alternativas directas para GAN111-650WSBQ — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con GAN111-650WSBQ (mismo factor de forma y huella) — difiere en Package, Technology.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
GAN111-650WSB
✅ Sustitución directa✓ En stock
$2.95 / unidad
Ver hoja de datos →GAN063-650WSBQ
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
GAN111-650WSBQ Valores máximos y características eléctricas
| Technology | GaN HEMT H2 + low-voltage Si MOSFET cascode |
| Polarity | N-Channel, normally-off (GaN FET) |
| Drain-Source Voltage (VDS) | 650 V |
| On-State Resistance (RDS(on)) | 97 mOhm |
| Continuous Drain Current (ID) | 21 A (Ta) |
| Power Dissipation (PD) | 107 W (Ta) |
| Drive Voltage | 10 V |
| Rango de temperatura de funcionamiento | -55 C to +175 C |
| Encapsulado | TO-247-3L (SOT429), Through Hole |
| Tipo de montaje | Through Hole |
| Configuration | Single FET |
| Estado RoHS | Compliant |
Configuración de pines de GAN111-650WSBQ
| Pin 1 | G — Gate - driven with conventional 10 V logic (cascode Si MOSFET gate) |
| Pin 2 | D — Drain - connected to package metal tab |
| Pin 3 | S — Source - Kelvin return path for gate loop |
Aplicaciones típicas
GAN111-650WSBQ es adecuado para 6 aplicacións: Totem-Pole Bridgeless PFC, LLC Resonant Converters, Solar and Renewable Energy Inverters, Industrial Motor Drives, High-Density SMPS / Telecom Rectifiers, High-Voltage Test and Prototype Platforms.
Totem-Pole Bridgeless PFC
The GAN111-650WSBQ is a strong fit for the fast switching leg of a continuous-conduction-mode totem-pole bridgeless PFC stage. Its GaN HEMT H2 cascode technology has near-zero reverse-recovery charge, eliminating the body-diade recovery loss that makes silicon MOSFETs unsuitable in this topology at the 650 V class. With 97 mOhm RDS(on) and 21 A continuous rating, a single device serves several-hundred-watt to kilowatt PFC front ends. Placed in a tight commutation loop and driven with a 10 V conventional gate driver, it sustains 65-100 kHz CCM switching with low loss; the main trade-off is strict layout discipline to control loop inductance and dv/dt.
Recomendado
LLC Resonant Converters
In half-bridge and full-bridge LLC resonant converters for server PSUs, adapters and LED drivers, the GAN111-650WSBQ provides 650 V blocking with 97 mOhm conduction at a ZVS operating point. Because LLC achieves zero-voltage switching, the GaN FET's low output charge and cascode reverse-conduction behavior minimize residual losses while allowing switching frequencies well above 100 kHz, shrinking the resonant inductor and transformer. The TO-247 through-hole package simplifies attaching a heatsink for the 107 W dissipation class. Designers should verify ZVS over the full load range, since loss of ZVS sharply raises turn-on loss in GaN devices at high bus voltage.
Recomendado
Solar and Renewable Energy Inverters
Solar micro-inverter and string-inverter power stages benefit from the GAN111-650WSBQ's 650 V rating, which directly accommodates 400 V DC-link bus systems with margin. The 97 mOhm RDS(on) keeps conduction loss low during MPPT boost and DC-AC stages, while GaN's fast switching enables compact, high-frequency magnetics important for rooftop and wall-mounted enclosures. Operating from -55 C to +175 C supports harsh outdoor thermal environments. Because GaN lacks a body diode, designers must implement defined freewheeling paths and verify dead-time logic; in return they gain very low reverse-recovery loss in hard-switched boost stages running at tens to hundreds of kilohertz.
Recomendado
Industrial Motor Drives
For servo drives and industrial inverters, the GAN111-650WSBQ can serve in the DC-link chopper, braking stage, or high-frequency inverter legs of 400 V-class systems. Its normally-off, 10 V-driven gate behaves like a silicon MOSFET, easing migration from existing IGBT or MOSFET drivers. GaN switching speed permits higher PWM frequencies, which reduces acoustic noise and current ripple in motor windings. The TO-247 package with 107 W dissipation capability simplifies mounting on existing extruded heatsinks. Designers should limit dv/dt-induced issues with careful gate turn-off impedance and verify gate-drive robustness against the fast switching edges inherent to GaN HEMT technology.
Recomendado
High-Density SMPS / Telecom Rectifiers
Telecom rectifiers and high-density AC-DC power supplies push for maximum watts per cubic inch, and the GAN111-650WSBQ addresses this by allowing switching frequencies that shrink transformers and EMI filters. With 650 V / 97 mOhm / 21 A ratings, one device class covers 500 W to multi-kilowatt brick and shelf power systems on a 400 V bus. The through-hole TO-247 format is common in current telecom power platforms, making the part retrofittable into existing thermals. The cascode structure's conventional 10 V gate drive lets designers reuse proven MOSFET driver circuits, reducing qualification risk when upgrading silicon platforms to GaN efficiency levels.
Recomendado
High-Voltage Test and Prototype Platforms
The TO-247-3L through-hole package of the GAN111-650WSBQ makes it especially convenient for evaluation boards, lab prototypes, and test fixtures for 650 V GaN switching research. Engineers can socket or solder the device, attach clip-on or bolted heatsinks, and probe gate and switching nodes directly, which is far harder with SMD GaN parts. With 97 mOhm RDS(on) and a 10 V conventional gate interface, the device pairs with standard MOSFET bench drivers for double-pulse testing of 400 V bus systems up to 21 A. This makes it a common first article for validating gate-driver and layout concepts before SMD production GaN parts are selected.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para GAN111-650WSBQ — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | GAN111-650WSB | GAN063-650WSBQ |
|---|---|---|---|
| Package | TO-247-3L (SOT429) | TO-247-3L (SOT429) - same | TO-247-3L (SOT429) - same |
| Brand | Nexperia | Nexperia | Nexperia |
| Drain-Source Voltage | 650 V | 650 V | 650 V |
| RDS(on) | 97 mOhm | 97 mOhm | 63 mOhm |
| Gate Drive Voltage | 10 V | 10 V | 10 V |
| Operating Temperature | -55 C to +175 C | -55 C to +175 C | -55 C to +175 C |
Diferenciadores clave
- Qualified (Q-suffixed) ordering code of the same die (frente a GAN111-650WSB)
- Lower on-resistance option in same footprint (frente a GAN063-650WSBQ)
- Cascode normally-off structure with conventional 10 V gate drive (frente a direct-drive e-mode GaN FETs of other brands)
Notas de diseño
GaN switching speed makes power-loop inductance the dominant cause of voltage overshoot. Keep the commutation loop (GAN111-650WSBQ plus its freewheeling companion device and DC-link capacitor) as physically small as possible; use laminated bus structures or tight parallel-plane returns. Place the gate driver within a few millimeters of pin 1 and use a dedicated source/Kelvin return to pin 3 rather than sharing the power ground path, so the gate loop does not enclose power-loop flux that causes spurious turn-on at high di/dt.
The GAN111-650WSBQ has no intrinsic body diode; reverse conduction occurs through the channel with a forward voltage set by the gate drive. Do not rely on diode-like reverse recovery behavior inherited from silicon designs. In half-bridge topologies, guarantee dead time is sufficient for ZVS or defined commutation, and verify the reverse-conduction loss in your efficiency budget. Also remember the TO-247 tab is at drain potential - isolate the heatsink or use an insulated pad when the drain sits on a 400 V rail.
Estimated: at 10 A RMS, conduction loss alone is I2 x RDS(on) = 100 x 0.097 = about 9.7 W; add switching loss at your operating frequency and voltage. With a package capability of 107 W (Ta), a modest heatsink on the TO-247 tab with thermal grease and forced airflow is normally sufficient for tens of watts of dissipation. Derive the exact junction-to-case thermal resistance from the Nexperia datasheet thermal table and verify junction temperature stays below the 175 C maximum with at least 20-30 C design margin.
Información de cumplimiento
RoHS compliance indicated by distributor listings (LCSC, DigiKey). REACH, lead-free, halogen-free and conflict-minerals statuses not stated in retrieved data; consult Nexperia's official product compliance documentation.
