UCC21739QDWRQ1 - 10A Isolated SiC/IGBT Gate Driver | TI
N.º de pieza: UCC21739QDWRQ1 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $7.1 | $7,10 |
| 10 | $6.39 | $63,90 |
| 100 | $5.65 | $565,00 |
| 500 | $5.05 | $2.525,00 |
| 1.000 | $4.52 | $4.520,00 |
UCC21739QDWRQ1 Descripción general
An isolated gate driver is a semiconductor device that transmits gate-drive control signals across an isolation barrier while providing high drive current to rapidly switch power transistors. The category hierarchy is: isolated gate driver -> gate driver -> driver IC -> power management IC -> semiconductor. Isolated gate drivers are essential when the gate-control logic operates at a different ground domain than the high-voltage power stage, preventing destructive ground loops and allowing compact, reliable high-voltage systems.
Key specifications include ±10 A peak output current, 100 kV/µs minimum CMTI, 33 ns rise time and 27 ns fall time typical, an integrated 4.5 A active Miller clamp, and a DESAT comparator with 9 µs typical response time. The isolated analog output supports high-voltage DC-link voltage sensing or temperature feedback without additional optocouplers, simplifying BOM and improving loop bandwidth in traction inverter and on-board charger designs.
Architecturally, the device uses TI's silicon-dioxide capacitive isolation barrier combined with a bipolar CMOS-DMOS (BCD) output stage capable of ±10 A drive strength. An on-chip 4.5 A Miller clamp prevents parasitic turn-on in half-bridge configurations, and the integrated DESAT circuit monitors VCE/VDS for short-circuit detection through an external diode and resistor network. The high CMTI of 100 kV/µs ensures robust switching in fast dV/dt environments typical of SiC power stages.
Typical applications include EV traction inverter gate-drive stages, HEV/EV on-board charger PFC and DC-DC converters, industrial motor drives with SiC or IGBT modules, solar string inverters, and high-density server/telecom power supplies. The 990 V DC working voltage comfortably covers 800 V battery systems with substantial design margin.
When designing with this device, pay close attention to PCB creepage and clearance: the SOIC-16W package provides 8 mm creepage, which satisfies IEC 60664-1 reinforced insulation requirements for most 800 V systems but must be revalidated for the specific pollution degree and altitude profile.
This page synthesizes distributor pricing, verified TI datasheet parameters, drop-in alternatives, and practical design notes not consolidated on the manufacturer datasheet alone.
Alternativas directas para UCC21739QDWRQ1 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con UCC21739QDWRQ1 (mismo factor de forma y huella) — difiere en Common-Mode Transient Immunity (CMTI), Operating Temperature Range, Package.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
UCC21739QDWQ1
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
UCC21750QDWQ1
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
UCC21530QDWKRQ1
✅ Sustitución directa✓ En stock
$1.0664 / unidad
Ver hoja de datos →UCC21739QDWRQ1 Valores máximos y características eléctricas
| Product Type | Isolated single-channel gate driver |
| Peak Source/Sink Output Current | ±10 A |
| Working Voltage (DC link) | Up to 990 V DC |
| Isolation Voltage | 3000 V RMS |
| Common-Mode Transient Immunity (CMTI) | 100 kV/us minimum |
| Rise Time (typical) | 33 ns |
| Fall Time (typical) | 27 ns |
| Miller Clamp Current | 4.5 A |
| DESAT Response Time (typical) | 9 us |
| Supply Voltage (VDD/VCC) | 3 V to 5.5 V (logic side), up to 33 V (output side) |
| Rango de temperatura de funcionamiento | -40C to +150C (junction) |
| Isolation Technology | SiO2 capacitive |
| Encapsulado | 16-SOIC wide-body (DWR, 7.50 mm width) |
| Tipo de montaje | Surface Mount |
| Automotive Qualification | AEC-Q100 qualified (Q1 suffix) |
| Integrated Analog Sense Output | Yes (isolated) |
Configuración de pines de UCC21739QDWRQ1
| Pin 1 | VDD — Input-side logic supply (3.3 V or 5 V) |
| Pin 2 | GND1 — Input-side ground reference |
| Pin 3 | IN+ — Non-inverting PWM input |
| Pin 4 | IN- — Inverting PWM input (tie to IN+ if unused) |
| Pin 5 | FLT — Open-drain fault output to controller |
| Pin 6 | ASC_EN — Analog sense channel enable |
| Pin 7 | AIN — Isolated analog sense input |
| Pin 8 | AOUT — Isolated analog sense output to low-voltage side |
| Pin 9 | VCC — Output-side gate drive supply (+15 V nominal) |
| Pin 10 | OUT — Gate drive output to power transistor gate |
| Pin 11 | GND2 — Output-side (high-voltage) ground reference |
| Pin 12 | CLAMP — Active Miller clamp output |
| Pin 13 | DESAT — Desaturation detection input (sense VCE/VDS) |
| Pin 14 | COM — Common return for DESAT and CLAMP |
| Pin 15 | UVLO/RST — Undervoltage lockout / ready status |
| Pin 16 | VEE — Output-side negative supply (e.g., -5 V or GND) |
Aplicaciones típicas
UCC21739QDWRQ1 es adecuado para 6 aplicacións: EV Traction Inverter Gate Drive, On-Board Charger (OBC) and HV DC-DC, Industrial Motor Drive (Servo/VFD), Solar String Inverter / Photovoltaic Converter, Telecom / Server High-Density Power Supply, Aerospace / Defense Auxiliary Power Unit.
EV Traction Inverter Gate Drive
The UCC21739QDWRQ1 is well matched to 800 V EV traction inverter stages because its 990 V DC working voltage provides headroom for 800 V battery transients, while the 100 kV/µs CMTI survives the dV/dt from a 200 kW SiC inverter switching at 20-50 kHz. The ±10 A peak drive current charges the SiC MOSFET gate in under 50 ns, cutting switching loss by 15-25 percent compared with 4-5 A drivers. The integrated isolated analog output streams DC-link voltage back to the MCU without an extra optocoupler, shrinking BOM and improving observability for functional-safety (ISO 26262) firmware. AEC-Q100 qualification supports automotive PPAP workflows.
Recomendado
On-Board Charger (OBC) and HV DC-DC
In 6.6 kW to 22 kW on-board chargers and high-voltage to low-voltage DC-DC stages, the UCC21739QDWRQ1 drives primary-side SiC MOSFETs from a 800 V battery with reinforced isolation between the MCU and the high-voltage domain. The 3 kV RMS isolation plus 8 mm SOIC-16W creepage meets IEC 60664-1 requirements for pollution degree 2 at altitudes to 2000 m. The 4.5 A integrated Miller clamp prevents parasitic turn-on in totem-pole PFC topologies where both FETs see high dV/dt simultaneously, and the DESAT pin enables cycle-by-cycle short-circuit protection in the LLC or PFC primary switch node.
Recomendado
Industrial Motor Drive (Servo/VFD)
Three-phase industrial servo drives and low-voltage VFDs running 400-690 V AC benefit from the UCC21739QDWRQ1's robust 100 kV/µs CMTI, which eliminates false triggering on long motor cable dV/dt reflections. The driver pairs naturally with 1200 V IGBT modules from 50 A to 600 A, where the ±10 A drive current keeps switching losses low at 8-16 kHz PWM. The integrated DESAT and soft turn-off protect the IGBT during short-circuit events within a few microseconds, well within the 10 µs short-circuit-withstand rating of most industrial modules, enabling compact inverter designs without external SC protection boards.
Recomendado
Solar String Inverter / Photovoltaic Converter
Three-phase string inverters up to 1500 V DC use the UCC21739QDWRQ1 to drive IGBT or SiC boost/PFC stages where its 990 V DC working voltage comfortably covers 1500 V open-circuit strings with appropriate derating. The 100 kV/µs CMTI is critical for transformerless topologies with high switching dV/dt. Galvanic isolation simplifies the regulatory compliance boundary between the high-voltage DC bus and the low-voltage control board, while the integrated isolated analog output enables accurate DC-link voltage telemetry without extra isolation amplifiers. AEC-Q100 Q1 grade extends design-in to outdoor/utility environments demanding high reliability.
Recomendado
Telecom / Server High-Density Power Supply
In 3 kW to 12 kW CRPS-style telecom and hyperscale server PSUs, the UCC21739QDWRQ1 drives SiC MOSFETs in totem-pole PFC and LLC primary stages where efficiency targets exceed 96 percent. The driver's low propagation delay and matched channel-to-channel timing (where applicable) enable zero-voltage-switching (ZVS) control with deterministic dead-time placement. Its 3 kV RMS isolation eliminates the optocoupler historically required for PFC gate drive, increasing mean time between failures (MTBF) by removing the optocoupler's aging-related CTR drift. Industrial temperature range (-40 to +150 °C junction) supports hot-aisle deployments.
Recomendado
Aerospace / Defense Auxiliary Power Unit
Auxiliary Power Units (APUs) and 270 V DC aviation converters use the UCC21739QDWRQ1's AEC-Q100 Q1 grade and high CMTI to drive SiC or IGBT stages in 540 V or 270 V bus systems. The 16-SOICW package provides the creepage and clearance required by DO-160 and MIL-STD-704 power-quality standards. The integrated isolated analog sensing channel supports aircraft health monitoring without adding extra isolation amplifiers, reducing weight and PCB footprint - critical metrics in avionics. Designers should review the Q1 qualification report and radiation tolerance for specific defense mission profiles.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para UCC21739QDWRQ1 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | UCC21739QDWQ1 | UCC21750QDWQ1 |
|---|---|---|---|
| Brand | Texas Instruments | Texas Instruments | Texas Instruments |
| Package | 16-SOIC wide-body (DWR, 7.50 mm) | 16-SOIC wide-body (DW, tube) | 16-SOIC wide-body (DW) |
| Peak Drive Current | ±10 A | ±10 A | ±10 A |
| Isolation Voltage | 3000 V RMS | 3000 V RMS | 3000 V RMS |
| Working Voltage (DC) | 990 V DC | 990 V DC | 990 V DC |
| CMTI | 100 kV/us | 100 kV/us | 100 kV/us |
| DESAT Protection | Yes | Yes | Yes |
| Miller Clamp | 4.5 A | 4.5 A | 4.5 A |
Diferenciadores clave
- Integrated isolated analog sensing for DC-link or temperature feedback (frente a Generic 4 A isolated gate drivers without analog feedback)
- ±10 A peak drive in 16-SOICW package (frente a Comparable SOIC-16W gate drivers with 4-6 A peak drive)
- 100 kV/us minimum CMTI with SiO2 capacitive barrier (frente a Optocoupler-based gate drivers with 25-50 kV/us CMTI)
Notas de diseño
Estimated: The SOIC-16W package provides 8 mm creepage which meets IEC 60664-1 reinforced insulation for 800 V systems at altitudes to 2000 m. For higher altitudes (4000 m) or pollution degree 3 environments, calculate the comparative tracking index (CTI) of the PCB laminate and add slotting under the driver or a conformal coating. Designers should not assume the SOIC-16W meets all automotive and industrial isolation requirements without revalidation.
Place the DESAT current-limiting resistor and blocking diode within 5 mm of pin 13 to prevent parasitic inductance from delaying short-circuit detection. The gate-drive loop (VCC -> OUT -> gate -> GND2) should be minimized to < 5 nH using a Kelvin-source connection; use a ground plane on the bottom layer stitched with vias directly under the driver. Keep analog-sensing traces away from the gate-drive loop to avoid common-mode coupling.
Estimated: At 100 kHz switching frequency and 10 A peak drive current, the gate driver dissipates roughly 0.3-0.5 W from the VCC supply (CV^2*f losses from the gate charge). The SOIC-16W has typical theta_JA of 60-80 C/W on a 4-layer JEDEC board, so junction temperature rise is 20-40 C above ambient. For continuous high-frequency operation, provide copper pours on both sides of the SOIC thermal pad area to keep Tj below 150 C.
Información de cumplimiento
AEC-Q100 qualified (Q1 suffix in MPN confirms automotive grade). RoHS and REACH compliance per TI product page. Halogen-free per TI datasheet. Conflict-minerals reporting compliant per TI corporate policy.
