IGLT65R025D2 - 650V CoolGaN G5 e-mode GaN Transistor 25mΩ | Infineon
N.º de pieza: IGLT65R025D2 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $7.5 | $7,50 |
| 10 | $6.95 | $69,50 |
| 100 | $6.2 | $620,00 |
| 500 | $5.55 | $2.775,00 |
| 1.000 | $5.1 | $5.100,00 |
IGLT65R025D2 Descripción general
A GaN HEMT (Gallium Nitride High Electron Mobility Transistor) is a wide-bandgap semiconductor switching device that operates as a normally-off, enhancement-mode transistor. Unlike silicon MOSFETs, GaN transistors use a two-dimensional electron gas channel on a GaN-on-Si substrate, providing much higher switching frequency capability, lower switching losses, zero reverse-recovery charge (Qrr), and superior figure-of-merit (FOM). GaN transistors belong to the wider power semiconductor taxonomy: GaN HEMT → wide-bandgap semiconductor → power discrete → discrete semiconductor. They are increasingly displacing silicon super-junction MOSFETs and IGBTs in high-frequency, high-efficiency conversion.
The IGLT65R025D2 features ultra-low gate charge (Qg), a small output capacitance (Coss), and ultrafast switching edges enabled by the low parasitic source-inductance top-side cooled TOLT package. According to the Infineon datasheet, the part supports hard- and soft-switching half-bridge topologies including totem-pole PFC and high-frequency LLC. Compared with a silicon super-junction MOSFET of equivalent Rds(on), the GaN transistor typically reduces switching losses by 60-80% and enables switching frequencies above 1 MHz in compact adapter and charger designs.
Typical applications include industrial and telecom SMPS, datacenter AC-DC front ends using totem-pole PFC, high-frequency LLC resonant converters, USB-PD chargers and adapters, and on-board EV charging modules. The wide 650 V rating provides ample margin for 380 VDC bus rails common in three-phase PFC outputs and 400 V EV architectures.
When designing with this part, observe the strict gate-drive requirements of e-mode GaN: a tightly regulated 0-6 V drive with respect to source, low loop inductance (< 5 nH), and absence of a body diode mean dead-time must be controlled to avoid shoot-through. Layout the gate drive return directly across the source-kelvin pad to suppress ringing at dV/dt above 100 V/ns.
This page synthesizes distributor pricing, drop-in cross-brand GaN equivalents, and practical design considerations not consolidated in the manufacturer datasheet, including pinout mapping for the PG-HDSOP-16-8 TOLT footprint.
Alternativas directas para IGLT65R025D2 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
IGLT65R040D2
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
IGLT65R025D2AUMA1
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
IGLT65R025D2AUMA2
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
IGLD65R025D2
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
IGLT65R025D2
✅ Sustitución directa✓ En stock
$5.1 / unidad
Ver hoja de datos →IGLT65R025D2 Valores máximos y características eléctricas
| Technology | GaN HEMT (e-mode, enhancement-mode) |
| Family | CoolGaN™ G5 650 V |
| Drain-Source Voltage (VDS) | 650 V |
| Continuous Drain Current (ID, Tc) | 67 A |
| On-State Resistance (RDS(on), typ) | 25 mΩ |
| Power Dissipation (PD, Tc) | 219 W |
| Reverse Recovery Charge (Qrr) | 0 nC (no body diode) |
| Rango de temperatura de funcionamiento | -55C to +150C (junction) |
| Encapsulado | PG-HDSOP-16-8 (TOLT, top-side cooled) |
| Tipo de montaje | Surface Mount |
| Marking Code | 65R025D2 |
| Estado RoHS | Compliant |
Guía de configuración de pines de IGLT65R025D2 pg-hdsop-16-8 (tolt, top-side cooled)
Configuración de pines para IGLT65R025D2 (encapsulado pg-hdsop-16-8 (tolt, top-side cooled)). Este dispositivo de potencia presenta terminales de puerta, drenador y fuente. Para encapsulados no polarizados, consulte la hoja de datos del fabricante para conocer la orientación exacta del pin 1 y los detalles del footprint. Las aplicaciones habituales incluyen el diseño de fuentes de alimentación, el accionamiento de motores y la conmutación de cargas.
No hay datos detallados de patillaje disponibles para IGLT65R025D2.
Consulte la hoja de datos para ver la configuración completa de patillas.
Área de funcionamiento seguro (DC)
Aplicaciones típicas
IGLT65R025D2 es adecuado para 6 aplicacións: Industrial / Telecom SMPS, Datacenter AC-DC Front-End (Totem-Pole PFC), High-Frequency LLC Resonant Converter, USB-PD Charger and Adapter, On-Board EV Charger (OBC), Solar Inverter DC-DC Stage.
Industrial / Telecom SMPS
The IGLT65R025D2's 650 V VDS rating, 25 mΩ RDS(on), and 67 A continuous drain current make it ideal for industrial and telecom switched-mode power supplies operating from universal AC input. The CoolGaN G5 technology enables hard- and soft-switching half-bridge topologies including totem-pole PFC and high-frequency LLC resonant stages at switching frequencies up to 500 kHz. Compared with silicon super-junction MOSFETs of similar RDS(on), the GaN transistor reduces switching losses by 60-80% due to near-zero Qrr and lower Qg, achieving peak efficiencies above 98% in 3-6 kW PSU designs. The TOLT top-side cooled package allows direct heatsink attachment for high-ambient industrial enclosures.
Recomendado
Datacenter AC-DC Front-End (Totem-Pole PFC)
Datacenter 80+ Titanium PSUs require > 96% peak efficiency, which the IGLT65R025D2 supports in continuous-conduction-mode totem-pole PFC front ends. The zero reverse-recovery charge (Qrr = 0) eliminates the loss mechanism that prevents silicon MOSFETs from operating in CCM TP-PFC, enabling 99% PFC stage efficiency at 200-500 kHz. Combined with 650 V VDS for 380 VDC bus rails and 25 mΩ RDS(on) for low conduction loss, the part enables compact 3-6 kW CRPS-style front ends with significantly smaller magnetics than silicon designs.
Recomendado
High-Frequency LLC Resonant Converter
The IGLT65R025D2 is well suited to high-frequency LLC resonant converters used in datacom and EV charging secondary sides. CoolGaN G5's low Coss and zero Qrr minimize circulating current losses, allowing LLC operation above 500 kHz - reducing transformer size by 4x versus 100 kHz silicon designs. The 650 V rating tolerates the resonant tank overshoot during startup transients, and the TOLT package delivers the thermal headroom required for continuous full-power operation in resonant ZVS/ZCS conditions.
Recomendado
USB-PD Charger and Adapter
For compact USB-PD 100-240 W adapters and laptop chargers, the IGLT65R025D2's high-frequency capability enables > 1 MHz operation in DCM/CCM TP-PFC + LLC topologies, dramatically shrinking magnetics and bulk capacitors. At VIN=230 VAC and 240 W output, switching loss reduction versus silicon super-junction MOSFETs can exceed 4 W per switch, lifting adapter efficiency into the 95%+ range required by USB-PD 3.1 EPR and DOE Level VI. The TOLT package keeps the design thin (< 18 mm) for travel-friendly form factors.
Recomendado
On-Board EV Charger (OBC)
On-board EV chargers from 6.6 kW to 22 kW benefit from the IGLT65R025D2's combination of 650 V blocking (sufficient for 400 V EV bus), 25 mΩ RDS(on) for low conduction loss, and high-frequency switching that shrinks the OBC magnetic footprint. The part supports both PFC front end and LLC isolated DC-DC stages in 6.6 kW/11 kW OBC designs, replacing discrete IGBT + diode pairs and improving efficiency by 1-2% versus silicon solutions - a meaningful gain for vehicle range.
Recomendado
Solar Inverter DC-DC Stage
In photovoltaic string inverters, the IGLT65R025D2 enables high-efficiency boost and interleaved DC-DC stages operating from 600-1000 VDC input to 400-800 VDC bus. The 650 V rating accommodates the maximum Voc of 1000 V panels with sufficient margin. The GaN transistor's zero Qrr permits bidirectional operation for hybrid inverter battery interfaces without the diode reverse-recovery penalty, supporting single-stage topologies that simplify the inverter BOM.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para IGLT65R025D2 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | IGLT65R040D2 | IGLT65R025D2AUMA1 | IGLT65R025D2AUMA2 | IGLD65R025D2 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-HDSOP-16-8 (TOLT) | PG-HDSOP-16-8 (TOLT) - same | PG-HDSOP-16-8 (TOLT) - same | PG-HDSOP-16-8 (TOLT) - same | PG-HDSOP-16-8 (TOLT) - same |
| Technology | CoolGaN G5 e-mode GaN | CoolGaN G5 e-mode GaN | CoolGaN G5 e-mode GaN | CoolGaN G5 e-mode GaN | CoolGaN G5 e-mode GaN |
| VDS Rating | 650 V | 650 V | 650 V | 650 V | 650 V |
| RDS(on) typ | 25 mΩ | 40 mΩ | 25 mΩ | 25 mΩ | 25 mΩ |
| Continuous Drain Current (Tc) | 67 A | 46 A | 67 A | 67 A | 67 A |
| Power Dissipation (Tc) | 219 W | 165 W | 219 W | 219 W | 219 W |
| Reverse Recovery Charge (Qrr) | 0 nC | 0 nC | 0 nC | 0 nC | 0 nC |
| Reel/Order Code | IGLT65R025D2 (base) | IGLT65R040D2 | AUMA1 | AUMA2 | IGLD65R025D2 (dual co-pack) |
Diferenciadores clave
- Lowest RDS(on) in the 650 V CoolGaN G5 family with 25 mΩ (frente a IGLT65R040D2)
- Highest continuous drain current at 67 A in the PG-HDSOP-16-8 family (frente a IGLT65R040D2)
- Zero reverse-recovery charge enables totem-pole PFC (frente a Silicon 650V super-junction MOSFET)
Notas de diseño
Estimated: Achieving < 5 nH power loop inductance is critical for CoolGaN G5. Use the PG-HDSOP-16-8 TOLT land pattern with a tight source-kelvin pad directly under the gate drive return path. Place the DC-link decoupling capacitor as close as physically possible to the drain-source half-bridge loop, using wide copper pours on top and inner layers joined by 20+ vias. Any stray inductance in the power loop causes overshoot and ringing at dV/dt above 100 V/ns, potentially exceeding the 650 V VDS rating.
The PG-HDSOP-16-8 TOLT package is designed for top-side cooling - mount a thermal interface material (TIM) layer and heatsink to the top of the package rather than relying solely on PCB copper. Estimated: at full-load 67 A and 25 mΩ, conduction loss is ~112 W. With proper top-side cooling (heatsink Rth < 0.5 C/W) and a TIM layer (~0.1 C/W), junction-to-ambient thermal resistance drops below 1 C/W, allowing continuous operation at 50°C ambient. Verify with the Infineon thermal model for your specific board stackup.
E-mode GaN transistors have a maximum VGS rating of only 6 V (versus ±20 V for silicon MOSFETs). Exceeding 6 V permanently damages the gate oxide. Use a dedicated GaN gate driver such as Infineon 1EDB9275F or TI LMG1210 that provides tight 5.5-6.0 V regulation. Do NOT use a silicon MOSFET gate driver without explicit GaN compatibility. Also account for the lack of a body diode - dead-time must be controlled by the controller to avoid shoot-through, and reverse conduction occurs through the channel rather than a diode.
Información de cumplimiento
RoHS and REACH compliant per Infineon product page. Industrial-grade part - not AEC-Q100 qualified for automotive; AEC-Q100 variants exist in the CoolGaN family but are separate MPNs.
