IGLT65R025D2 - 650V CoolGaN G5 e-mode GaN Transistor 25mΩ | Infineon
料号： IGLT65R025D2 ✓ 量产中| 数量 | 单价 | 小计 |
|---|---|---|
| 1 | $7.5 | $7.50 |
| 10 | $6.95 | $69.50 |
| 100 | $6.2 | $620.00 |
| 500 | $5.55 | $2,775.00 |
| 1,000 | $5.1 | $5,100.00 |
IGLT65R025D2 概述
A GaN HEMT (Gallium Nitride High Electron Mobility Transistor) is a wide-bandgap semiconductor switching device that operates as a normally-off, enhancement-mode transistor. Unlike silicon MOSFETs, GaN transistors use a two-dimensional electron gas channel on a GaN-on-Si substrate, providing much higher switching frequency capability, lower switching losses, zero reverse-recovery charge (Qrr), and superior figure-of-merit (FOM). GaN transistors belong to the wider power semiconductor taxonomy: GaN HEMT → wide-bandgap semiconductor → power discrete → discrete semiconductor. They are increasingly displacing silicon super-junction MOSFETs and IGBTs in high-frequency, high-efficiency conversion.
The IGLT65R025D2 features ultra-low gate charge (Qg), a small output capacitance (Coss), and ultrafast switching edges enabled by the low parasitic source-inductance top-side cooled TOLT package. According to the Infineon datasheet, the part supports hard- and soft-switching half-bridge topologies including totem-pole PFC and high-frequency LLC. Compared with a silicon super-junction MOSFET of equivalent Rds(on), the GaN transistor typically reduces switching losses by 60-80% and enables switching frequencies above 1 MHz in compact adapter and charger designs.
Typical applications include industrial and telecom SMPS, datacenter AC-DC front ends using totem-pole PFC, high-frequency LLC resonant converters, USB-PD chargers and adapters, and on-board EV charging modules. The wide 650 V rating provides ample margin for 380 VDC bus rails common in three-phase PFC outputs and 400 V EV architectures.
When designing with this part, observe the strict gate-drive requirements of e-mode GaN: a tightly regulated 0-6 V drive with respect to source, low loop inductance (< 5 nH), and absence of a body diode mean dead-time must be controlled to avoid shoot-through. Layout the gate drive return directly across the source-kelvin pad to suppress ringing at dV/dt above 100 V/ns.
This page synthesizes distributor pricing, drop-in cross-brand GaN equivalents, and practical design considerations not consolidated in the manufacturer datasheet, including pinout mapping for the PG-HDSOP-16-8 TOLT footprint.
直接替换替代料： IGLT65R025D2 ——相同封装，引脚兼容。需要 PCB 改动的不同封装料号已排除。
快速对比工具——选择替代料号进行并排对比：
IGLT65R040D2
✅ 直接替换📋 参考替代料（不在目录中）
IGLT65R025D2AUMA1
✅ 直接替换📋 参考替代料（不在目录中）
IGLT65R025D2AUMA2
✅ 直接替换📋 参考替代料（不在目录中）
IGLD65R025D2
✅ 直接替换📋 参考替代料（不在目录中）
IGLT65R025D2
✅ 直接替换✓ 有现货
$5.1 / 个
查看数据手册 →IGLT65R025D2 最大额定值与电气特性
| Technology | GaN HEMT (e-mode, enhancement-mode) |
| Family | CoolGaN™ G5 650 V |
| Drain-Source Voltage (VDS) | 650 V |
| Continuous Drain Current (ID, Tc) | 67 A |
| On-State Resistance (RDS(on), typ) | 25 mΩ |
| Power Dissipation (PD, Tc) | 219 W |
| Reverse Recovery Charge (Qrr) | 0 nC (no body diode) |
| 工作温度范围 | -55C to +150C (junction) |
| 封装 | PG-HDSOP-16-8 (TOLT, top-side cooled) |
| 安装类型 | Surface Mount |
| Marking Code | 65R025D2 |
| RoHS 状态 | Compliant |
IGLT65R025D2 pg-hdsop-16-8 (tolt, top-side cooled) 引脚配置指南
IGLT65R025D2（pg-hdsop-16-8 (tolt, top-side cooled) 封装）的引脚配置。 该功率器件具有栅极、漏极和源极端子。对于无极性封装，请参阅制造商数据手册以了解确切的引脚 1 方向和封装尺寸细节。常见应用包括电源设计、电机驱动和负载开关。
暂无详细引脚数据： IGLT65R025D2.
请参阅 数据手册 以查看完整引脚配置。
安全工作区 (DC)
典型应用
IGLT65R025D2 适用于 6 应用s: Industrial / Telecom SMPS, Datacenter AC-DC Front-End (Totem-Pole PFC), High-Frequency LLC Resonant Converter, USB-PD Charger and Adapter, On-Board EV Charger (OBC), Solar Inverter DC-DC Stage.
Industrial / Telecom SMPS
The IGLT65R025D2's 650 V VDS rating, 25 mΩ RDS(on), and 67 A continuous drain current make it ideal for industrial and telecom switched-mode power supplies operating from universal AC input. The CoolGaN G5 technology enables hard- and soft-switching half-bridge topologies including totem-pole PFC and high-frequency LLC resonant stages at switching frequencies up to 500 kHz. Compared with silicon super-junction MOSFETs of similar RDS(on), the GaN transistor reduces switching losses by 60-80% due to near-zero Qrr and lower Qg, achieving peak efficiencies above 98% in 3-6 kW PSU designs. The TOLT top-side cooled package allows direct heatsink attachment for high-ambient industrial enclosures.
推荐
Datacenter AC-DC Front-End (Totem-Pole PFC)
Datacenter 80+ Titanium PSUs require > 96% peak efficiency, which the IGLT65R025D2 supports in continuous-conduction-mode totem-pole PFC front ends. The zero reverse-recovery charge (Qrr = 0) eliminates the loss mechanism that prevents silicon MOSFETs from operating in CCM TP-PFC, enabling 99% PFC stage efficiency at 200-500 kHz. Combined with 650 V VDS for 380 VDC bus rails and 25 mΩ RDS(on) for low conduction loss, the part enables compact 3-6 kW CRPS-style front ends with significantly smaller magnetics than silicon designs.
推荐
High-Frequency LLC Resonant Converter
The IGLT65R025D2 is well suited to high-frequency LLC resonant converters used in datacom and EV charging secondary sides. CoolGaN G5's low Coss and zero Qrr minimize circulating current losses, allowing LLC operation above 500 kHz - reducing transformer size by 4x versus 100 kHz silicon designs. The 650 V rating tolerates the resonant tank overshoot during startup transients, and the TOLT package delivers the thermal headroom required for continuous full-power operation in resonant ZVS/ZCS conditions.
推荐
USB-PD Charger and Adapter
For compact USB-PD 100-240 W adapters and laptop chargers, the IGLT65R025D2's high-frequency capability enables > 1 MHz operation in DCM/CCM TP-PFC + LLC topologies, dramatically shrinking magnetics and bulk capacitors. At VIN=230 VAC and 240 W output, switching loss reduction versus silicon super-junction MOSFETs can exceed 4 W per switch, lifting adapter efficiency into the 95%+ range required by USB-PD 3.1 EPR and DOE Level VI. The TOLT package keeps the design thin (< 18 mm) for travel-friendly form factors.
推荐
On-Board EV Charger (OBC)
On-board EV chargers from 6.6 kW to 22 kW benefit from the IGLT65R025D2's combination of 650 V blocking (sufficient for 400 V EV bus), 25 mΩ RDS(on) for low conduction loss, and high-frequency switching that shrinks the OBC magnetic footprint. The part supports both PFC front end and LLC isolated DC-DC stages in 6.6 kW/11 kW OBC designs, replacing discrete IGBT + diode pairs and improving efficiency by 1-2% versus silicon solutions - a meaningful gain for vehicle range.
推荐
Solar Inverter DC-DC Stage
In photovoltaic string inverters, the IGLT65R025D2 enables high-efficiency boost and interleaved DC-DC stages operating from 600-1000 VDC input to 400-800 VDC bus. The 650 V rating accommodates the maximum Voc of 1000 V panels with sufficient margin. The GaN transistor's zero Qrr permits bidirectional operation for hybrid inverter battery interfaces without the diode reverse-recovery penalty, supporting single-stage topologies that simplify the inverter BOM.
推荐
推荐产品汇总
工程参考数据： IGLT65R025D2 ——对比、设计指导和合规信息。
选型指南
与替代料对比
| 参数 | 本产品 | IGLT65R040D2 | IGLT65R025D2AUMA1 | IGLT65R025D2AUMA2 | IGLD65R025D2 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-HDSOP-16-8 (TOLT) | PG-HDSOP-16-8 (TOLT) - same | PG-HDSOP-16-8 (TOLT) - same | PG-HDSOP-16-8 (TOLT) - same | PG-HDSOP-16-8 (TOLT) - same |
| Technology | CoolGaN G5 e-mode GaN | CoolGaN G5 e-mode GaN | CoolGaN G5 e-mode GaN | CoolGaN G5 e-mode GaN | CoolGaN G5 e-mode GaN |
| VDS Rating | 650 V | 650 V | 650 V | 650 V | 650 V |
| RDS(on) typ | 25 mΩ | 40 mΩ | 25 mΩ | 25 mΩ | 25 mΩ |
| Continuous Drain Current (Tc) | 67 A | 46 A | 67 A | 67 A | 67 A |
| Power Dissipation (Tc) | 219 W | 165 W | 219 W | 219 W | 219 W |
| Reverse Recovery Charge (Qrr) | 0 nC | 0 nC | 0 nC | 0 nC | 0 nC |
| Reel/Order Code | IGLT65R025D2 (base) | IGLT65R040D2 | AUMA1 | AUMA2 | IGLD65R025D2 (dual co-pack) |
关键差异点
- Lowest RDS(on) in the 650 V CoolGaN G5 family with 25 mΩ （对比 IGLT65R040D2)
- Highest continuous drain current at 67 A in the PG-HDSOP-16-8 family （对比 IGLT65R040D2)
- Zero reverse-recovery charge enables totem-pole PFC （对比 Silicon 650V super-junction MOSFET)
设计说明
Estimated: Achieving < 5 nH power loop inductance is critical for CoolGaN G5. Use the PG-HDSOP-16-8 TOLT land pattern with a tight source-kelvin pad directly under the gate drive return path. Place the DC-link decoupling capacitor as close as physically possible to the drain-source half-bridge loop, using wide copper pours on top and inner layers joined by 20+ vias. Any stray inductance in the power loop causes overshoot and ringing at dV/dt above 100 V/ns, potentially exceeding the 650 V VDS rating.
The PG-HDSOP-16-8 TOLT package is designed for top-side cooling - mount a thermal interface material (TIM) layer and heatsink to the top of the package rather than relying solely on PCB copper. Estimated: at full-load 67 A and 25 mΩ, conduction loss is ~112 W. With proper top-side cooling (heatsink Rth < 0.5 C/W) and a TIM layer (~0.1 C/W), junction-to-ambient thermal resistance drops below 1 C/W, allowing continuous operation at 50°C ambient. Verify with the Infineon thermal model for your specific board stackup.
E-mode GaN transistors have a maximum VGS rating of only 6 V (versus ±20 V for silicon MOSFETs). Exceeding 6 V permanently damages the gate oxide. Use a dedicated GaN gate driver such as Infineon 1EDB9275F or TI LMG1210 that provides tight 5.5-6.0 V regulation. Do NOT use a silicon MOSFET gate driver without explicit GaN compatibility. Also account for the lack of a body diode - dead-time must be controlled by the controller to avoid shoot-through, and reverse conduction occurs through the channel rather than a diode.
合规信息
RoHS and REACH compliant per Infineon product page. Industrial-grade part - not AEC-Q100 qualified for automotive; AEC-Q100 variants exist in the CoolGaN family but are separate MPNs.
