IPD100N04S402ATMA1 - 40V 100A Automotive N-MOSFET | Infineon
N.º de pieza: IPD100N04S402ATMA1 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $0 | $0,00 |
| 10 | $0 | $0,00 |
| 100 | $0 | $0,00 |
| 500 | $0 | $0,00 |
| 1.000 | $0 | $0,00 |
IPD100N04S402ATMA1 Descripción general
A power MOSFET is a voltage-controlled semiconductor switch in the MOSFET, transistor, and discrete-semiconductor hierarchy. When driven above its threshold voltage, it permits low-loss current flow between drain and source; when off, it blocks the applied voltage. Its position in a DC-DC converter, motor-drive stage, battery system, or board-level power circuit determines the required switching speed, conduction loss, avalanche behavior, thermal performance, and package capability.
The verified source data identifies a single N-channel device with a built-in diode, 40 V drain-source rating, 100 A current capability, and 4.0 mΩ on-resistance. It is reported as AEC-Q101 qualified, 100% avalanche tested, RoHS compliant, and moisture-sensitivity level 1. The package supports a maximum operating temperature of 175°C and a peak-reflow rating of 260°C, subject to the complete manufacturer processing and handling requirements.
This low-voltage, low-RDS(on) device is intended for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power designs. The PG-TO252 package offers a large tab for heat spreading, but selected PCB copper still has a major effect on junction temperature and allowable switching duty cycle. Automotive qualification and avalanche testing make it relevant to robust low-voltage power paths, although final suitability still depends on load transients, gate drive, PCB construction, and thermal design.
For a new design, compare the 4.0 mΩ conduction rating with actual operating current and junction temperature rather than relying only on the 100 A headline value. Keep the drain-source voltage below 40 V, provide local gate-drive impedance and clamping as appropriate, and connect the tab to a substantial copper plane. Use the manufacturer datasheet for qualified pulse limits, SOA boundaries, gate-charge data, and exact ordering information.
Unlike a low-voltage drop regulator or a switching-regulator controller, this MOSFET does not regulate voltage by itself; it is the controlled switching element inside a power-conversion topology. Its low resistance can reduce conduction loss in a correctly sized current path, while the unenhanced off-state behavior requires suitable gate drive and source-reference design. The following selection notes, comparisons, and design cautions distinguish verified ratings from information not present in the supplied records.
Alternativas directas para IPD100N04S402ATMA1 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con IPD100N04S402ATMA1 (mismo factor de forma y huella) — difiere en Package.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
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BSC025N04LSG
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IPD100N04S402ATMA1 Valores máximos y características eléctricas
| Channel Type | N-channel |
| Operating Mode | Enhancement mode |
| Drain-Source Voltage | 40 V |
| Continuous Drain Current | 100 A at Tc |
| Power Dissipation | 150 W at Tc |
| On-Resistance | 4.0 mΩ |
| Configuration | Single MOSFET with built-in diode |
| Encapsulado | PG-TO252-3-313 surface-mount DPAK |
| Recuento de pines | 3 pins plus tab |
| Automotive Qualification | AEC-Q101 qualified |
| Avalanche Testing | 100% avalanche tested |
| Minimum Operating Temperature | -55°C |
| Maximum Operating Temperature | 175°C |
| Peak Reflow Temperature | 260°C |
| Moisture Sensitivity Level | MSL1 |
| Estado RoHS | Compliant |
| Tipo de montaje | Surface mount |
| Package Body Material | Plastic/epoxy |
| JEDEC Package Code | TO-252 |
Guía de configuración de pines de IPD100N04S402ATMA1 to-252
Configuración de pines para IPD100N04S402ATMA1 (encapsulado to-252). Este dispositivo de potencia presenta terminales de puerta, drenador y fuente. Para encapsulados no polarizados, consulte la hoja de datos del fabricante para conocer la orientación exacta del pin 1 y los detalles del footprint. Las aplicaciones habituales incluyen el diseño de fuentes de alimentación, el accionamiento de motores y la conmutación de cargas.
No hay datos detallados de patillaje disponibles para IPD100N04S402ATMA1.
Consulte la hoja de datos para ver la configuración completa de patillas.
Aplicaciones típicas
IPD100N04S402ATMA1 es adecuado para 6 aplicacións: Low-Voltage Motor Drives, Automotive Battery Systems, DC-DC Converter Switch Stages, Load-Control Power Paths, Battery Protection and Distribution, Board-Level Power Switching.
Low-Voltage Motor Drives
IPD100N04S402ATMA1 fits a 40 V N-channel switching leg in battery or automotive motor-control systems because the verified rating includes 100 A current capability at case temperature and 4.0 mΩ on-resistance. The low resistance can reduce estimated conduction loss during the on interval, but the 40 V limit leaves little margin for a 24 V bus with fast transients. Gate-drive voltage, dead time, switching frequency, motor inductance, and body-diode recovery must be verified from the full datasheet. The PG-TO252 tab should be tied to a broad copper pour, and the design must stay inside the device SOA.
Recomendado
Automotive Battery Systems
For a qualified 40 V automotive power path, IPD100N04S402ATMA1 offers AEC-Q101 qualification, 100% avalanche testing, and a 4.0 mΩ on-resistance in a surface-mount DPAK outline. Those attributes support low-loss battery switching when the transient voltage remains below 40 V and the PCB can remove the calculated heat. The 100 A value is specified at Tc, so ambient conditions and copper area remain decisive. Production engineers should also verify load dump, reverse-battery, short-circuit, ISO 7637, and transient requirements against the complete Infineon qualification package; none of those system-level tests is provided here.
Recomendado
DC-DC Converter Switch Stages
IPD100N04S402ATMA1 can serve as the high-side or low-side switch in a low-voltage DC-DC converter when its 40 V drain-source rating covers the worst-case input and ringing. The 4.0 mΩ on-resistance helps minimize estimated I²R conduction loss, while the 150 W Tc power-dissipation class provides a defined device-level limit for thermal analysis. Exact suitability depends on gate charge, switching energies, threshold voltage, output capacitance, avalanche rating, and SOA, all of which require the official datasheet. Place the gate driver close to the device and provide local drain/source loops to minimize switching-loop inductance.
Recomendado
Load-Control Power Paths
The 40 V, 100 A-at-case-temperature IPD100N04S402ATMA1 is suitable for resistive or inductive load-control switching where conduction efficiency is important and the switch is operated with proper gate drive. Its 4.0 mΩ resistance reduces estimated conduction loss compared with higher-resistance alternatives, but inductance can impose large turn-off voltage spikes that exceed the 40 V rating. Add a suitable gate clamp, snubber, or freewheeling path only after simulating worst-case load and layout parasitics. The DPAK tab and copper pour must be designed for the calculated thermal rise rather than the maximum headline current.
Recomendado
Battery Protection and Distribution
IPD100N04S402ATMA1 can be evaluated for reverse-current control, battery disconnect, or power-distribution functions where its N-channel topology, built-in diode, and low 4.0 mΩ on-resistance are useful. The built-in source-to-drain diode can create an unintended current path, so the circuit architecture must account for whether reverse blocking is required. The verified 100% avalanche testing is beneficial for rugged switching, but avalanche pulse energy and SOA boundaries are not supplied and must not be inferred from the 150 W power rating. Validate the complete switch path for startup, short circuit, thermal cycling, and automotive transients.
Recomendado
Board-Level Power Switching
For compact 40 V board-level power designs, IPD100N04S402ATMA1 combines surface-mount PG-TO252-3-313 packaging with a 4.0 mΩ on-resistance and 175°C maximum operating temperature. It can reduce conduction loss in a high-current branch while keeping assembly automated. However, the package is not a substitute for a complete thermal solution: tab copper, vias, board thickness, ambient temperature, and neighboring components determine performance. Confirm exact drain, source, gate, and tab connectivity in the manufacturer datasheet before layout because the supplied verified data does not provide a complete pin map.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para IPD100N04S402ATMA1 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | IPD100N04S4L02ATMA1 | IPD100N04S4-02 | IRF3205 | STP160NF06 | BSC025N04LSG |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Vishay Intertechnology | STMicroelectronics | Infineon Technologies |
Diferenciadores clave
- Low verified on-resistance (frente a IPD100N04S4-02)
- Matched high-current power class (frente a IPD100N04S4L02ATMA1)
- Automotive qualification evidence (frente a IRF3205)
Notas de diseño
Estimated: using the verified 4.0 mΩ on-resistance, conduction loss is P = I²R. At 10 A this is 0.4 W; at 25 A it is 2.5 W. These are arithmetic estimates, not guaranteed operating points. Add switching and diode losses, then validate the resulting case and junction temperatures against the Infineon datasheet. Use the PG-TO252 tab with a broad, low-impedance copper pour and adequate thermal vias because the 100 A rating is specified at Tc.
Keep the drain and source current loop short and wide, and place the gate driver and gate-loop return close to the MOSFET to limit parasitic inductance. The verified 40 V rating leaves limited margin for switch-node ringing, so use low-ESR local capacitance and validate the worst-case layout with an oscilloscope. Do not rely on the built-in diode as a substitute for a deliberately designed reverse-blocking or freewheeling path.
Do not treat 100 A, 150 W, or 4.0 mΩ as independent guarantees. The 100 A value is specified at Tc, the 150 W value is also tied to Tc, and the 40 V maximum limits transient headroom. Before release, check gate voltage limits, threshold behavior, avalanche energy, SOA, body-diode recovery, and startup conditions in the official Infineon datasheet. The supplied records do not include those detailed curves.
Información de cumplimiento
The verified data identifies a RoHS-compliant green package and AEC-Q101 qualification. REACH, lead-free status, halogen-free status, and conflict-minerals status were not supplied.
