Infineon

IPD100N04S402ATMA1 - 40V 100A Automotive N-MOSFET | Infineon

Артикул: IPD100N04S402ATMA1 ✓ Активен

В наличии Отправка в течение 1–3 рабочих дней

40 V Vdss 100 A at Tc Id 4.0 mΩ Rds(on) PG-TO252-3-313 surface-mount DPAK Package

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Цена обновлена: 2026-10-20

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Открыть datasheet (PDF) Смотреть аналоги

Количество

IPD100N04S402ATMA1 Обзор

Infineon Technologies IPD100N04S402ATMA1 is an automotive-qualified 40 V N-channel enhancement-mode power MOSFET rated for 100 A continuous drain current at case temperature and 150 W power dissipation, supplied in a surface-mount PG-TO252-3-313 DPAK package. Its stated on-resistance is 4.0 mΩ, making it suitable for low-voltage switching and high-current load-control circuits.

A power MOSFET is a voltage-controlled semiconductor switch in the MOSFET, transistor, and discrete-semiconductor hierarchy. When driven above its threshold voltage, it permits low-loss current flow between drain and source; when off, it blocks the applied voltage. Its position in a DC-DC converter, motor-drive stage, battery system, or board-level power circuit determines the required switching speed, conduction loss, avalanche behavior, thermal performance, and package capability.

The verified source data identifies a single N-channel device with a built-in diode, 40 V drain-source rating, 100 A current capability, and 4.0 mΩ on-resistance. It is reported as AEC-Q101 qualified, 100% avalanche tested, RoHS compliant, and moisture-sensitivity level 1. The package supports a maximum operating temperature of 175°C and a peak-reflow rating of 260°C, subject to the complete manufacturer processing and handling requirements.

This low-voltage, low-RDS(on) device is intended for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power designs. The PG-TO252 package offers a large tab for heat spreading, but selected PCB copper still has a major effect on junction temperature and allowable switching duty cycle. Automotive qualification and avalanche testing make it relevant to robust low-voltage power paths, although final suitability still depends on load transients, gate drive, PCB construction, and thermal design.

For a new design, compare the 4.0 mΩ conduction rating with actual operating current and junction temperature rather than relying only on the 100 A headline value. Keep the drain-source voltage below 40 V, provide local gate-drive impedance and clamping as appropriate, and connect the tab to a substantial copper plane. Use the manufacturer datasheet for qualified pulse limits, SOA boundaries, gate-charge data, and exact ordering information.

Unlike a low-voltage drop regulator or a switching-regulator controller, this MOSFET does not regulate voltage by itself; it is the controlled switching element inside a power-conversion topology. Its low resistance can reduce conduction loss in a correctly sized current path, while the unenhanced off-state behavior requires suitable gate drive and source-reference design. The following selection notes, comparisons, and design cautions distinguish verified ratings from information not present in the supplied records.

Аналоги без доработки для IPD100N04S402ATMA1 — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.

Варианты в этой серии

Модели той же серии, совместимые без доработки с IPD100N04S402ATMA1 (тот же форм-фактор и посадочное место) — отличается по Package.

IRF3205STRLPBF

Infineon

Package: TO-263-3 (D2PAK)

Сравнить с IPD100N04S402ATMA1 →

Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:

IPD100N04S4L02ATMA1

✅ Прямая замена

📦 PG-TO252-3-313

Both are listed at 40 V, 100 A and 150 W; RDS(on), pin assignment and qualification differences require datasheet confirmation

📋 Справочный аналог (нет в каталоге)

IPD100N04S4-02

✅ Прямая замена

📦 [DATA_NEEDED: exact package]

The family candidate is listed at 2 mΩ versus 4.0 mΩ for the target, a 2 mΩ difference; package compatibility is not established

📋 Справочный аналог (нет в каталоге)

IRF3205STRLPBF

✅ Прямая замена

Infineon

📦 [DATA_NEEDED: exact package]

N-Channel · Enhancement · 55 V · 110 A · 390 A · 8 mΩ max @ Vgs=10V · 2.0 V to 4.0 V · 97.3 nC typical

✓ В наличии

$1.02 / шт.

Открыть даташит →

STP160NF06

✅ Прямая замена

📦 [DATA_NEEDED: exact package]

The supplied source names it as equivalent but does not provide verified 40 V rating, RDS(on), current, package, or pin compatibility

📋 Справочный аналог (нет в каталоге)

BSC025N04LSG

✅ Прямая замена

📦 [DATA_NEEDED: exact package]

The supplied source names it as equivalent but does not verify the target's PG-TO252 footprint, terminal mapping, RDS(on), or current rating

📋 Справочный аналог (нет в каталоге)

IPD100N04S402ATMA1 Максимальные параметры и электрические характеристики

Channel Type	N-channel
Operating Mode	Enhancement mode
Drain-Source Voltage	40 V
Continuous Drain Current	100 A at Tc
Power Dissipation	150 W at Tc
On-Resistance	4.0 mΩ
Configuration	Single MOSFET with built-in diode
Корпус	PG-TO252-3-313 surface-mount DPAK
Число выводов	3 pins plus tab
Automotive Qualification	AEC-Q101 qualified
Avalanche Testing	100% avalanche tested
Minimum Operating Temperature	-55°C
Maximum Operating Temperature	175°C
Peak Reflow Temperature	260°C
Moisture Sensitivity Level	MSL1
Статус RoHS	Compliant
Тип монтажа	Surface mount
Package Body Material	Plastic/epoxy
JEDEC Package Code	TO-252

Руководство по цоколевке IPD100N04S402ATMA1 в корпусе to-252

Цоколевка для IPD100N04S402ATMA1 (корпус to-252). Этот силовой прибор имеет выводы затвора, стока и истока. Для неполяризованных корпусов обратитесь к техническому описанию производителя для точной ориентации вывода 1 и деталей посадочного места. Типичные применения включают проектирование источников питания, управление двигателями и коммутацию нагрузки.

Схема цоколевки корпуса to-252 для IPD100N04S402ATMA1

Нет подробных данных о распиновке для IPD100N04S402ATMA1.

Обратитесь к даташиту для полной конфигурации выводов.

Типичное применение

IPD100N04S402ATMA1 подходит для 6 применениеs: Low-Voltage Motor Drives, Automotive Battery Systems, DC-DC Converter Switch Stages, Load-Control Power Paths, Battery Protection and Distribution, Board-Level Power Switching.

🏭

Low-Voltage Motor Drives

IPD100N04S402ATMA1 fits a 40 V N-channel switching leg in battery or automotive motor-control systems because the verified rating includes 100 A current capability at case temperature and 4.0 mΩ on-resistance. The low resistance can reduce estimated conduction loss during the on interval, but the 40 V limit leaves little margin for a 24 V bus with fast transients. Gate-drive voltage, dead time, switching frequency, motor inductance, and body-diode recovery must be verified from the full datasheet. The PG-TO252 tab should be tied to a broad copper pour, and the design must stay inside the device SOA.

Рекомендуется

IPD100N04S4L02ATMA1 (Infineon 40 V automotive MOSFET family candidate)

🚗

Automotive Battery Systems

For a qualified 40 V automotive power path, IPD100N04S402ATMA1 offers AEC-Q101 qualification, 100% avalanche testing, and a 4.0 mΩ on-resistance in a surface-mount DPAK outline. Those attributes support low-loss battery switching when the transient voltage remains below 40 V and the PCB can remove the calculated heat. The 100 A value is specified at Tc, so ambient conditions and copper area remain decisive. Production engineers should also verify load dump, reverse-battery, short-circuit, ISO 7637, and transient requirements against the complete Infineon qualification package; none of those system-level tests is provided here.

Рекомендуется

IPD100N04S4L02ATMA1 (Infineon 40 V automotive power-MOSFET comparison candidate)

⚡

DC-DC Converter Switch Stages

IPD100N04S402ATMA1 can serve as the high-side or low-side switch in a low-voltage DC-DC converter when its 40 V drain-source rating covers the worst-case input and ringing. The 4.0 mΩ on-resistance helps minimize estimated I²R conduction loss, while the 150 W Tc power-dissipation class provides a defined device-level limit for thermal analysis. Exact suitability depends on gate charge, switching energies, threshold voltage, output capacitance, avalanche rating, and SOA, all of which require the official datasheet. Place the gate driver close to the device and provide local drain/source loops to minimize switching-loop inductance.

Рекомендуется

IPD100N04S4-02 (Infineon 40 V low-RDS(on) MOSFET family candidate)

🔧

Load-Control Power Paths

The 40 V, 100 A-at-case-temperature IPD100N04S402ATMA1 is suitable for resistive or inductive load-control switching where conduction efficiency is important and the switch is operated with proper gate drive. Its 4.0 mΩ resistance reduces estimated conduction loss compared with higher-resistance alternatives, but inductance can impose large turn-off voltage spikes that exceed the 40 V rating. Add a suitable gate clamp, snubber, or freewheeling path only after simulating worst-case load and layout parasitics. The DPAK tab and copper pour must be designed for the calculated thermal rise rather than the maximum headline current.

Рекомендуется

IPD100N04S4L02ATMA1 (Same-family 40 V automotive switching candidate)

🔋

Battery Protection and Distribution

IPD100N04S402ATMA1 can be evaluated for reverse-current control, battery disconnect, or power-distribution functions where its N-channel topology, built-in diode, and low 4.0 mΩ on-resistance are useful. The built-in source-to-drain diode can create an unintended current path, so the circuit architecture must account for whether reverse blocking is required. The verified 100% avalanche testing is beneficial for rugged switching, but avalanche pulse energy and SOA boundaries are not supplied and must not be inferred from the 150 W power rating. Validate the complete switch path for startup, short circuit, thermal cycling, and automotive transients.

Рекомендуется

BSC025N04LSG (Named 40 V low-resistance MOSFET alternative candidate)

🖥️

Board-Level Power Switching

For compact 40 V board-level power designs, IPD100N04S402ATMA1 combines surface-mount PG-TO252-3-313 packaging with a 4.0 mΩ on-resistance and 175°C maximum operating temperature. It can reduce conduction loss in a high-current branch while keeping assembly automated. However, the package is not a substitute for a complete thermal solution: tab copper, vias, board thickness, ambient temperature, and neighboring components determine performance. Confirm exact drain, source, gate, and tab connectivity in the manufacturer datasheet before layout because the supplied verified data does not provide a complete pin map.

Рекомендуется

IPD100N04S4-02 (Infineon 40 V board-level power-switch family candidate)

Сводка рекомендуемых товаров

IPD100N04S4L02ATMA1 Infineon 40 V automotive MOSFET family candidate Используется в: Low-Voltage Motor Drives, Automotive Battery Systems, Load-Control Power Paths IPD100N04S4-02 Infineon 40 V low-RDS(on) MOSFET family candidate Используется в: DC-DC Converter Switch Stages, Board-Level Power Switching BSC025N04LSG Named 40 V low-resistance MOSFET alternative candidate Используется в: Battery Protection and Distribution

What is the voltage and current rating of IPD100N04S402ATMA1?

IPD100N04S402ATMA1 is a 40 V N-channel MOSFET with 100 A drain current at case temperature. According to the verified Infineon product listing, it also has 150 W power dissipation at Tc and a 4.0 mΩ on-resistance. These ratings describe the device class; actual continuous-current capability remains dependent on PCB copper, case temperature, gate drive, and switching conditions.

Where can I download the IPD100N04S402ATMA1 datasheet PDF?

The official Infineon product page is the preferred starting point for the IPD100N04S402ATMA1 datasheet. The supplied results also identify datasheet-hosting pages at DigiChip and Datasheets.com, while DigiKey provides product specifications and purchasing data. Use the manufacturer document for authoritative ordering, pinout, electrical characteristics, test conditions, and recommended application details.

Where can I buy IPD100N04S402ATMA1 and what is its price?

IPD100N04S402ATMA1 can be ordered through DigiKey, Arrow, Octopart-listed distributors, and other authorized supply channels shown in the verified results. No numeric distributor price was supplied, so the price tiers use zero only as an unavailable-data placeholder and are not purchase quotes. Request a current quotation and stock confirmation from the seller before budgeting the part.

Is IPD100N04S402ATMA1 in stock and what is its lead time?

DigiKey's verified snippet says the part ships today, but the supplied data does not provide a numeric stock count or a universal lead time. Other distributors list availability, yet those statements can change by region and quantity. For production planning, request the current manufacturer lead time and authorized-distributor inventory for the exact suffix and package quantity.

Is IPD100N04S402ATMA1 suitable for automotive applications?

Yes, IPD100N04S402ATMA1 is identified as an automotive N-channel MOSFET qualified to AEC-Q101. The verified record also states that it is 100% avalanche tested and supplied in a green RoHS-compliant package. Automotive suitability still requires the complete manufacturer qualification report, production traceability, and system-level validation for the specific application.

What are the key specifications of IPD100N04S402ATMA1 engineers should know?

IPD100N04S402ATMA1 combines a 40 V drain-source rating, 100 A current capability at Tc, 4.0 mΩ on-resistance, and 150 W power dissipation at Tc. It is an enhancement-mode N-channel MOSFET in PG-TO252-3-313, with a built-in diode, AEC-Q101 qualification, MSL1 status, and a 175°C maximum operating temperature according to the verified data.

What is the pinout of IPD100N04S402ATMA1?

The device uses the PG-TO252-3-313 surface-mount DPAK outline, commonly identified as a three-pin package with two electrical terminals and a tab. The verified data confirms TO-252 packaging but does not provide the exact terminal names and numbering, so the pinout field is null rather than guessed. Confirm drain, source, gate, and tab assignments against the official Infineon datasheet before fabrication.

What can replace IPD100N04S402ATMA1?

The supplied cross-reference results mention IRF3205, STP160NF06, and BSC025N04LSG as equivalent products, but the provided records do not establish same-package pin compatibility and comparable safe operating ratings for each candidate. Consequently, none is listed as a verified drop-in replacement here. Use the manufacturer's pinout and application requirements to validate any substitution before using it in production.

What is the best Infineon equivalent for IPD100N04S402ATMA1?

IPD100N04S4L02ATMA1 is the closest Infineon candidate visible in the verified cross-reference results: it is listed as a 40 V, 100 A, 150 W N-channel MOSFET in PG-TO252-3-313. Its exact RDS(on), gate characteristics, pinout, automotive status, and temperature limits are not fully supplied, so confirm those specifications in the official datasheet before treating it as a drop-in replacement.

Is IPD100N04S402ATMA1 the same as IPD100N04S4-02?

The verified data links IPD100N04S4-02 to the same Infineon product family and describes it as a 40 V, 100 A N-channel MOSFET with 2 mΩ RDS(on). The target IPD100N04S402ATMA1 is listed at 4.0 mΩ, so the resistance differs by approximately 2 mΩ or 100% relative to the target value. The ordering code and exact package suffix must be checked before substitution.

IPD100N04S402ATMA1 vs IPD100N04S4L02ATMA1: which MOSFET is better for motor drives?

The target is verified at 40 V, 100 A, 150 W and 4.0 mΩ, while IPD100N04S4L02ATMA1 is listed at 40 V, 100 A and 150 W in the same PG-TO252-3-313 outline. The supplied data does not provide the alternative's RDS(on), pinout, or SOA, so motor-drive selection cannot be completed safely. Compare gate charge, switching loss, SOA, and thermal data before choosing.

How should I calculate power loss in IPD100N04S402ATMA1?

For a simplified conduction-loss estimate, calculate P = I² × RDS(on), then compare the result with the permitted case and junction temperatures. At 10 A and 4.0 mΩ, the estimated conduction loss is 0.4 W; this is an arithmetic example, not a manufacturer-rated operating point. Include switching loss, source-to-drain diode loss, ambient temperature, and copper thermal resistance for the actual design.

Why does the IPD100N04S402ATMA1 package temperature matter?

The verified rating of 100 A is specified at Tc, so the case temperature and PCB thermal path directly affect usable current. The PG-TO252 tab can spread heat, but copper area, via arrangement, board thickness, and neighboring heat sources still control junction temperature. Do not interpret the 100 A rating as a board-independent continuous-current guarantee.

What design precautions apply to the built-in diode?

The verified device description identifies a single MOSFET with a built-in diode, so reverse current can flow between source and drain during certain switching states. The diode's forward drop, reverse-recovery behavior, and avalanche limits are not supplied and must be checked in the Infineon datasheet. Account for this path when designing reverse-blocking, synchronous, or bidirectional converters.

When should I choose IPD100N04S402ATMA1 over another 40 V MOSFET?

Choose IPD100N04S402ATMA1 when a design specifically benefits from its verified 40 V rating, 4.0 mΩ RDS(on), 100 A at-Tc current class, 150 W dissipation class, AEC-Q101 qualification, and PG-TO252 footprint. Choose another MOSFET when its verified RDS(on), gate charge, SOA, thermal resistance, price, or package is a better fit. The 100 A headline alone is not enough to make the selection.

Справочные инженерные данные для IPD100N04S402ATMA1 — сравнение, рекомендации по проектированию и информация о соответствии.

Руководство по выбору

Choose IPD100N04S402ATMA1 for a low-voltage, high-current switching design that specifically needs the verified 40 V rating, 4.0 mΩ RDS(on), 100 A-at-Tc current class, AEC-Q101 qualification, and PG-TO252-3-313 package. It is particularly relevant to automotive battery, motor-drive, load-control, and board-level power paths, subject to complete SOA and transient validation. Consider IPD100N04S4-02 when its verified 2 mΩ resistance is beneficial and the exact package and pinout are independently verified. Treat IPD100N04S4L02ATMA1, IRF3205, STP160NF06, and BSC025N04LSG as candidates only until their pinouts, voltage ratings, RDS(on), SOA, thermal limits, and qualification status match. In every comparison, use actual current, ambient temperature, PCB copper, switching frequency, and load transients rather than the 100 A headline alone.

Сравнение с аналогами

Параметр	Этот товар	IPD100N04S4L02ATMA1	IPD100N04S4-02	IRF3205	STP160NF06	BSC025N04LSG
Brand	Infineon Technologies	Infineon Technologies	Infineon Technologies	Vishay Intertechnology	STMicroelectronics	Infineon Technologies

Ключевые отличия

Low verified on-resistance (против IPD100N04S4-02)
Matched high-current power class (против IPD100N04S4L02ATMA1)
Automotive qualification evidence (против IRF3205)

Заметки по проектированию

Estimated: using the verified 4.0 mΩ on-resistance, conduction loss is P = I²R. At 10 A this is 0.4 W; at 25 A it is 2.5 W. These are arithmetic estimates, not guaranteed operating points. Add switching and diode losses, then validate the resulting case and junction temperatures against the Infineon datasheet. Use the PG-TO252 tab with a broad, low-impedance copper pour and adequate thermal vias because the 100 A rating is specified at Tc.

Keep the drain and source current loop short and wide, and place the gate driver and gate-loop return close to the MOSFET to limit parasitic inductance. The verified 40 V rating leaves limited margin for switch-node ringing, so use low-ESR local capacitance and validate the worst-case layout with an oscilloscope. Do not rely on the built-in diode as a substitute for a deliberately designed reverse-blocking or freewheeling path.

Do not treat 100 A, 150 W, or 4.0 mΩ as independent guarantees. The 100 A value is specified at Tc, the 150 W value is also tied to Tc, and the 40 V maximum limits transient headroom. Before release, check gate voltage limits, threshold behavior, avalanche energy, SOA, body-diode recovery, and startup conditions in the official Infineon datasheet. The supplied records do not include those detailed curves.

Информация о соответствии

RoHS

Compliant

REACH

Unknown

AEC-Q100

Qualified

Без свинца

Unknown

Без галогенов

Unknown

Конфликтные минералы

Unknown

The verified data identifies a RoHS-compliant green package and AEC-Q101 qualification. REACH, lead-free status, halogen-free status, and conflict-minerals status were not supplied.

Данные проверены: 2026-10-20 — данные проверены и курируются командой компонентной инженерии XAIPART

Источники: Distributor, Manufacturer Datasheet, Octopart, Octopart, Manufacturer Datasheet, Manufacturer Datasheet, Distributor, Distributor, Distributor, Distributor, Manufacturer Product Page, Distributor, Octopart, Distributor, Distributor

Связанные компоненты & термины

Infineon Technologies IPD100N04S402ATMA1 IPD100N04S4L02ATMA1 IPD100N04S4-02 IRF3205 STP160NF06 BSC025N04LSG N-channel MOSFET power MOSFET enhancement-mode transistor discrete semiconductor PG-TO252-3-313 DPAK TO-252 surface-mount package RDS(on) drain current drain-source voltage power dissipation AEC-Q101 RoHS MSL1 automotive battery systems motor drives DC-DC converters