JMTG070N06A - 60V 70A N-Channel Power MOSFET | PDFN5x6-8L
N.º de pieza: JMTG070N06A ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $0.95 | $0,95 |
| 10 | $0.85 | $8,50 |
| 100 | $0.72 | $72,00 |
| 500 | $0.61 | $305,00 |
| 1.000 | $0.52 | $520,00 |
| 3.000 | $0.45 | $1.350,00 |
JMTG070N06A Descripción general
A power MOSFET is a voltage-controlled semiconductor switch that uses an insulated gate (typically a MOS structure) to modulate current flow between source and drain. N-channel enhancement-mode devices such as the JMTG070N06A require a positive gate-to-source voltage (above VGS(th)) to turn on, and they belong to the broader category of power transistors within discrete semiconductors. They sit at the heart of switching-mode power conversion, motor drive, and load management, where they replace bipolar transistors with far higher switching efficiency and simpler gate drive requirements.
Key features of the JMTG070N06A include a 60 V drain-to-source breakdown voltage (VDS), 70 A continuous drain current, RDS(on) under 6 mOhm at VGS = 10 V, advanced trench cell design for excellent figure-of-merit, and a lead-free, RoHS-compliant PDFN5x6-8L package with an exposed drain pad for low thermal impedance. The trench technology minimizes cell pitch and reduces both on-resistance and gate charge simultaneously, while the bottom-source/center-drain pad layout supports direct PCB heatsinking.
The device is rated for avalanche operation, with the datasheet specifying an EAS condition of VDD = 30 V, VGS = 10 V, L = 0.5 mH, Rg = 25 ohm, and IAS = 27 A at TJ = 25 degC - useful headroom for unclamped inductive switching events. Internal ESD protection on the gate and a wide safe operating area (SOA) further enhance robustness in real-world motor and converter environments.
Typical applications include high-current synchronous rectification in switched-mode power supplies, brushless DC (BLDC) motor drive stages in e-bikes and power tools, battery protection and high-side/low-side switching in lithium packs, Class-D audio amplifier output stages, and high-current DC load switches. The combination of 60 V rating with very low on-resistance makes it particularly well suited to 12 V and 24 V battery systems.
When designing with this MOSFET, mind that the PDFN5x6-8L package has a thermal pad that MUST be soldered to a sufficient PCB copper area to achieve rated current. Gate drive rise/fall times should be controlled with a small gate resistor (typically 10 ohm) to limit ringing, and the VGS(th) of the part should be checked against the chosen gate driver's logic output swing to guarantee full enhancement at full load.
This page synthesizes JMTG061A distributor pricing, drop-in same-package equivalents, SOA annotations, and practical PCB layout notes not found in the bare manufacturer datasheet, structured to be citable to AI search engines and engineering buyers.
Alternativas directas para JMTG070N06A — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con JMTG070N06A (mismo factor de forma y huella) — difiere en Package, Manufacturer, Technology, Mounting Type, Configuration.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
JMTG100N06A
✅ Sustitución directa✓ En stock
$0.15 / unidad
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✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
AON7403
✅ Sustitución directa📋 Alternativa de referencia (no en el catálogo)
DMN3190LDW-7
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Ver hoja de datos →JMTG070N06A Valores máximos y características eléctricas
| Manufacturer | Jiejie Micro (JJW) |
| Part Number | JMTG070N06A |
| Polarity / Type | N-channel Enhancement Mode |
| Drain-to-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) | 70 A |
| On-Resistance RDS(ON) | < 6 mOhm @ VGS = 10 V |
| Technology | Advanced Trench MOSFET |
| Encapsulado | PDFN5x6-8L (Power DFN 5x6 mm, 8 leads) |
| Tipo de montaje | Surface Mount (SMD) |
| Single Pulse Avalanche Energy (EAS) | IAS = 27 A at VDD = 30 V, L = 0.5 mH, Rg = 25 ohm (TJ = 25 degC) |
| Lead Status | Lead free / RoHS compliant |
| Configuration | Single N-channel MOSFET |
Configuración de pines de JMTG070N06A
| Pin 1 | S — Source |
| Pin 2 | S — Source |
| Pin 3 | S — Source |
| Pin 4 | G — Gate |
| Pin 5 | D — Drain (tied to exposed pad) |
| Pin 6 | D — Drain (tied to exposed pad) |
| Pin 7 | S — Source |
| Pin 8 | S — Source |
| Pin PAD | D — Drain exposed pad (bottom of package, also pin 5/6) |
JMTG070N06A Área de funcionamiento seguro (DC)
Aplicaciones típicas
JMTG070N06A es adecuado para 6 aplicacións: Synchronous Rectification in 24 V Buck Converters, BLDC Motor Drive in E-Bikes and Power Tools, Battery Protection and High-Side Load Switch, Class-D Audio Amplifier Output Stage, High-Current DC Load Switch in Industrial Power Distribution, Solar Micro-Inverter and MPPT Power Stage.
Synchronous Rectification in 24 V Buck Converters
The JMTG070N06A is well suited as the low-side synchronous MOSFET in 24 V buck converters powering servers, telecom, and industrial point-of-load rails. Its 60 V VDS rating absorbs 24 V nominal bus plus transients, 70 A ID handles >30 A continuous loads, and RDS(ON) below 6 mOhm at VGS = 10 V keeps conduction loss under 6 W at 30 A - extending efficiency by 2 to 4 percentage points versus 10 mOhm-MOSFET designs. Used in a totem-pole arrangement with a controller such as the ISL95833HRTZ, paired with an ISL83072EIUZA gate driver for clean dead-time control.
Recomendado
BLDC Motor Drive in E-Bikes and Power Tools
E-bike and power-tool BLDC motor drive stages demand 30 to 70 A peak current from a 24 V or 36 V battery with high reliability. The JMTG070N06A's 70 A ID and 60 V VDS comfortably handle 36 V battery pack headroom, while its 27 A single-pulse avalanche current (per datasheet EAS condition) survives motor back-EMF events during commutation. Placed in a three-phase bridge driven by DRV8308RHAR or DRV8350RSRGZT gate drivers, the low on-resistance reduces heat sinking requirements in compact handle enclosures.
Recomendado
Battery Protection and High-Side Load Switch
Lithium battery packs require high-current low-RDS(ON) MOSFETs for protection and load switching. The JMTG070N06A in back-to-back configuration provides 70 A continuous discharge with sub-6 mOhm total path resistance, minimizing voltage drop and heat in e-bike, e-scooter, and power-bank designs. Its 60 V rating covers 4S to 8S lithium packs up to 33.6 V fully charged. Best paired with a battery management IC such as the BQ76952 family (not on site) and reinforced isolation from an ISO7761DW. Note that for true 60 V rated hot-swap with body-diode conduction, verify the EAS avalanche rating in the Jiejie Micro datasheet.
Recomendado
Class-D Audio Amplifier Output Stage
High-power Class-D audio amplifiers use a half-bridge or full-bridge output stage switching at 250 kHz to 1 MHz. The JMTG070N06A's low RDS(ON) and small gate charge minimize crossover and conduction losses, achieving amplifier efficiency above 90% at 100 W into 4 ohm loads. Its 60 V rating is comfortable for +/- 25 V rail amplifiers. Pair with the IXDN609YI or IXDD609SI gate driver for fast 5 ns rise/fall edges that reduce dead-time artifacts in the audio output.
Recomendado
High-Current DC Load Switch in Industrial Power Distribution
Industrial 24 V and 48 V power distribution boards need rugged high-current load switches. The JMTG070N06A in a high-side P-channel replacement configuration (or as low-side switch) carries 70 A continuous to motor, actuator, or heater loads, with avalanche rating to dissipate inductive kickback. Combined with an ISO5851DWR gate driver or DRV8873HPWPR motor driver, the same device scales across a wide range of factory automation and process control loads.
Recomendado
Solar Micro-Inverter and MPPT Power Stage
Small-scale solar micro-inverters and MPPT controllers operate from 20 V to 50 V PV string voltages and require high-current trench FETs. The JMTG070N06A's 60 V rating covers 36 V PV open-circuit voltage, and its low gate charge improves MPPT tracking response time under rapidly changing irradiance. Combined with the F280049CPZS or F280045PMSR C2000 MCU running the MPPT algorithm and DRV8426PWPR gate driver, the system reaches >97% peak efficiency at 200 W output.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para JMTG070N06A — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | JMTG100N06A | JMTG050N10A | AON7403 | DMN3190LDW-7 | BSZ0901NS |
|---|---|---|---|---|---|---|
| Package | PDFN5x6-8L | PDFN5x6-8L - same | PDFN5x6-8L - same | DFN5x6-8L - same footprint | PowerDI5060-8 - compatible | PG-TSDSON-8 - compatible |
| Brand | Jiejie Micro | Jiejie Micro | Jiejie Micro | Alpha & Omega Semiconductor | Diodes Incorporated | Infineon |
| VDS Max | 60 V | 60 V | 100 V | 30 V | 30 V | 30 V |
| Polarity | N-channel | N-channel | N-channel | N-channel | N-channel | N-channel |
| Technology | Trench | Trench | Trench | Trench | Trench | OptiMOS trench |
| Lead Status | Lead free / RoHS | Lead free / RoHS | Lead free / RoHS | Lead free / RoHS | Lead free / RoHS | Lead free / RoHS |
Diferenciadores clave
- 60 V rating covers 24 V industrial battery bus with full transient headroom (frente a AON7403 (30 V))
- Sub-6 mOhm RDS(ON) reduces conduction loss by 30 to 50% (frente a DMN3190LDW-7)
- Same-brand product family provides higher-current 100 A version (frente a JMTG100N06A)
Notas de diseño
The PDFN5x6-8L exposed drain pad MUST be soldered to a substantial copper pour (recommended at least 1 square inch of 2 oz copper) to reach the 70 A datasheet current rating. Use thermal via arrays (0.3 mm drill, 1.0 mm pitch) under the pad to inner layers to reduce junction temperature. Solder mask defined (SMD) pads are not recommended for the thermal pad - use NSMD for best thermal performance and reliability.
Estimated: at 30 A continuous load with RDS(ON) = 6 mOhm, conduction loss is I^2 x RDS(ON) = 30 x 30 x 0.006 = 5.4 W. With PCB-only cooling and theta_JA of approximately 40 C/W (per typical 1 sq inch 2 oz copper), junction rise above ambient is roughly 216 C - well above 150 C TJ max. Either reduce operating current to ~20 A, add heatsink, or upgrade to 2 sq inch copper pour plus thermal vias to inner planes.
Place a small gate resistor (typically 10 to 22 ohm) directly at the gate pin to damp ringing from the gate-driver-to-FET parasitic loop inductance. Keep the high-current drain/source loop as short as physically possible - this means placing the JMTG070N06A immediately adjacent to the output inductor or motor connector. Use a gate-source 10 kohm pull-down resistor to ensure the MOSFET stays off if the gate driver is disconnected during power-up.
Do not operate the JMTG070N06A above 60 V VDS - even brief transients exceeding this rating can permanently damage the device. For 24 V lead-acid battery systems with potential load-dump transients up to 60 V, add a TVS or transient zener on the rail. Also confirm the chosen gate driver's logic swing exceeds the JMTG070N06A's VGS(th) plus margin under all temperature conditions - typical trench FETs need 6 to 8 V VGS for rated RDS(ON).
Información de cumplimiento
RoHS compliant per Jiejie Micro datasheet (lead-free part designation in JMTG prefix). AEC-Q100 qualification status not specified in the datasheet - this part is intended for industrial and consumer applications, not automotive.
