JMTG070N06A vs BSZ0901NSIATMA1 Comparación
Comparación detallada lado a lado de JMTG070N06A por Jiejie Micro y BSZ0901NSIATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | JMTG070N06A | BSZ0901NSIATMA1 |
|---|---|---|
| Marca | Jiejie Micro | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,45 | $0,34 |
| Manufacturer | Jiejie Micro (JJW) | Infineon Technologies |
| Part Number | JMTG070N06A | BSZ0901NSIATMA1 |
| Polarity / Type | N-channel Enhancement Mode | — |
| Drain-to-Source Voltage (VDS) | 60 V | — |
| Continuous Drain Current (ID) | 70 A | — |
| On-Resistance RDS(ON) | < 6 mOhm @ VGS = 10 V | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) min/typ/max] | — |
| Gate Charge Qg | [DATA_NEEDED: total gate charge] | — |
| Technology | Advanced Trench MOSFET | OptiMOS trench N-channel MOSFET |
| Encapsulado | PDFN5x6-8L (Power DFN 5x6 mm, 8 leads) | PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) |
| Tipo de montaje | Surface Mount (SMD) | Surface Mount |
| Single Pulse Avalanche Energy (EAS) | IAS = 27 A at VDD = 30 V, L = 0.5 mH, Rg = 25 ohm (TJ = 25 degC) | — |
| Lead Status | Lead free / RoHS compliant | — |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: TJ max and operating range] | -55 C to +150 C (typical MOSFET range) |
| Thermal Resistance RthJA | [DATA_NEEDED: theta_JA] | — |
| Configuration | Single N-channel MOSFET | — |
| Series | — | OptiMOS 25V |
| FET Type | — | N-Channel |
| Drain-Source Voltage (VDS) | — | 30 V |
| Continuous Drain Current (ID) at Ta=25C | — | 25 A |
| Continuous Drain Current (ID) at Tc=25C | — | 40 A |
| Power Dissipation (PD) at Ta=25C | — | 2.1 W |
| Power Dissipation (PD) at Tc=25C | — | 69 W |
| Recuento de pines | — | 8 |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| On-Resistance RDS(on) max @ VGS=10V | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| On-Resistance RDS(on) max @ VGS=4.5V | — | [DATA_NEEDED: RDS(on) max @ VGS=4.5V] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge Qg] |
| Packaging | — | Tape & Reel (ATMA1 suffix = 13-inch reel) |
| Estado RoHS | — | Compliant |