MD7P19130HSR3 - 40W, 1.93-1.99GHz RF Power MOSFET | NXP
N.º de pieza: MD7P19130HSR3 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $90.59 | $90,59 |
| 10 | $84.2 | $842,00 |
| 100 | $76.95 | $7.695,00 |
| 250 | $71.4 | $17.850,00 |
| 500 | $65.1 | $32.550,00 |
MD7P19130HSR3 Descripción general
An RF power MOSFET is a lateral field-effect transistor optimized for high-frequency, high-power amplification in the megahertz-to-gigahertz range. RF power MOSFETs sit at the top of the power amplifier hierarchy (RF amplifier -> power amplifier -> RF front-end -> wireless base station) and are characterized by output power (W), gain (dB), drain efficiency (%), and adjacent-channel leakage ratio (ACLR, dBc). Compared with bipolar RF transistors, LDMOS offers higher gain, simpler biasing, better thermal stability, and intrinsic matching to 50 ohm systems. MD7P19130HSR3 is the WCDMA-optimized "S" suffix variant, distinguished by tighter linearity for 3GPP signal chains.
Key features include 20 dB typical power gain at 1987.5 MHz, 30% drain efficiency at full output, -36 dBc ACPR at 5 MHz offset in 3.84 MHz W-CDMA channels, and a 7.5 dB peak-to-average ratio (PAR) handling capability. The device is designed for single-carrier operation and includes integrated ESD protection and a thermally enhanced ceramic package capable of dissipating the full 40 W average output continuously when mounted on an adequate heatsink. The 28 V drain bias simplifies integration with existing -48 V telecom plant topologies stepped down through a single DC-DC converter.
The MD7P19130HSR3 is the recommended part for the Doherty final stage and single-ended PA in 1.93-1.99 GHz band (US PCS, UMTS band II) base-station radios. Designers also use it as a driver for higher-power LDMOS finals when additional output headroom is required.
Mounting is straightforward but thermally demanding: the NI-780S-4L package must be bolted to a heatsink with thermal compound, and the RF leads form a 50 ohm microstrip interface. A complete bias sequence (VGGS on before VDDS) is required to prevent device damage, and the input/output match must be optimized for the target frequency sub-band for full W-CDMA ACLR compliance.
Alternativas directas para MD7P19130HSR3 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con MD7P19130HSR3 (mismo factor de forma y huella) — difiere en Drain Efficiency, Frequency Range, Input Signal PAR, Mounting Type, Package / Case.
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
MD7P19130HR3
✅ Sustitución directa✓ En stock
$69.5 / unidad
Ver hoja de datos →MD7P19130HR5
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
MD7P19130H
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
MRF7S19130HSR3
✅ Sustitución directa ⚠️ Especificaciones sin verificar📋 Alternativa de referencia (no en el catálogo)
MD7P19130HSR3 Valores máximos y características eléctricas
| Tipo de transistor | LDMOS (Dual), Lateral N-Channel RF Power MOSFET |
| Technology | NXP HV7 LDMOS |
| Drain-Source Voltage (VDS) Rated | 65 V |
| Operating Drain Voltage (VDD) | 28 V (typical) |
| Frequency Range | 1930 MHz to 1990 MHz |
| Output Power (Pout) | 40 W average (W-CDMA, single-carrier) |
| Power Gain | 20 dB typical at 1987.5 MHz |
| Drain Efficiency | 30% typical at 40 W, 1987.5 MHz |
| Quiescent Drain Current (IDQ) | 1250 mA |
| ACPR (5 MHz offset, 3.84 MHz channel) | -36 dBc typical |
| Input Signal PAR | 7.5 dB @ 0.01% probability on CCDF |
| Device Output Signal PAR | 6 dB @ 0.01% probability on CCDF |
| Encapsulado / Carcasa | NI-780S-4L (CASE 465M-01, STYLE 1), ceramic flanged |
| Tipo de montaje | Chassis-mount (bolt-down) with ceramic lid |
| Operating Mode | Single-carrier W-CDMA, Class AB |
| Estado RoHS | Compliant |
Configuración de pines de MD7P19130HSR3
| Pin 1 | RF Input — 50 ohm RF input, gate bias combined |
| Pin 2 | Gate Bias (VGGS) — DC gate supply, sequenced on before VDDS |
| Pin 3 | Drain Bias (VDDS) — 28 V DC drain supply |
| Pin 4 | RF Output — 50 ohm RF output, drain bias combined |
| Pin 5 | Flange (Thermal) — Bolt-down heatsink interface, isolated from RF |
| Pin 6 | Ceramic Lid — Hermetic seal, ground reference |
DC Área de funcionamiento seguro
Aplicaciones típicas
MD7P19130HSR3 es adecuado para 6 aplicacións: UMTS Band II Base-Station Final Stage, Doherty Power Amplifier for W-CDMA, Single-Ended PA Driver Stage, Repeater and Small-Cell Power Amplifier, Public-Safety Band II Amplifier, Industrial RF Heating and Plasma Generator.
UMTS Band II Base-Station Final Stage
The MD7P19130HSR3 is the reference final-stage LDMOS for 1.93-1.99 GHz UMTS band II (US PCS) base-station power amplifiers. With 40 W average output at 20 dB gain and 30% drain efficiency from a 28 V rail, it meets 3GPP release-99/5 emission masks (-36 dBc ACPR at 5 MHz offset) without external digital predistortion in many designs. The NI-780S-4L ceramic package bolts directly to the PA heatsink and the input/output microstrip interface simplifies 50 ohm matching. Designers use the part in single-ended PAs for small cells and macro base stations where its 7.5 dB PAR handling preserves ACLR margin under real-world W-CDMA loading.
Recomendado
Doherty Power Amplifier for W-CDMA
In a two-way Doherty configuration for UMTS band II, the MD7P19130HSR3 serves as both the carrier (main) and peaking amplifier device. Its 6 dB output PAR and 20 dB gain match the Doherty load modulation profile, allowing the designer to reach >40% system efficiency at 6 dB back-off from 40 W peak. Combined with a 90-degree offset line and harmonic-tuned matching networks, the part delivers -36 dBc ACPR and -55 dBc at 10 MHz offset to meet 3GPP spectrum-emission requirements. The identical die in both carrier and peaking positions simplifies bias sequencing and reduces BOM cost in macro-cell Doherty PA modules.
Recomendado
Single-Ended PA Driver Stage
The MD7P19130HSR3 is deployed as a driver stage for higher-power LDMOS final PAs in stacked base-station amplifier chains. Its 20 dB gain and 40 W output cleanly drive 80-100 W finals when paired with an inter-stage attenuator and matching network, with the 30% drain efficiency minimizing thermal load in the driver compartment. The same NI-780S-4L footprint as the finals simplifies PCB layout and allows a common heatsink assembly, reducing mechanical complexity in the radio unit.
Recomendado
Repeater and Small-Cell Power Amplifier
For 1.93-1.99 GHz indoor small cells, pico repeaters, and RF boosters, the MD7P19130HSR3 provides the necessary 40 W output power in a compact NI-780S-4L ceramic package that integrates with a small heatsink. Its single-carrier W-CDMA tuning simplifies the digital front end and its 28 V drain rail is compatible with the small-cell PoE+48 V input stepped down through a single DC-DC converter. The part's ACPR margin allows operation without DPD, lowering FPGA/DSP cost in low-channel-count small-cell designs.
Recomendado
Public-Safety Band II Amplifier
Public-safety LTE infrastructure operating in the 1.93-1.99 GHz band uses the MD7P19130HSR3 as a final-stage amplifier for mission-critical P25/LTE base stations. Its -36 dBc ACPR margin and 7.5 dB PAR handling support the high crest-factor signals of LTE public-safety waveforms, while the ceramic NI-780S-4L package meets the long-lifetime reliability requirements of emergency-services infrastructure. The bolted ceramic lid resists thermal cycling and vibration in tower-top installations.
Recomendado
Industrial RF Heating and Plasma Generator
Industrial RF heating and plasma-generation systems operating in the 1.93-1.99 GHz ISM-adjacent band can use the MD7P19130HSR3 as a continuous-duty power source. Its 40 W average output and 30% efficiency from a 28 V rail provide the energy density needed for plasma ignition and dielectric heating, while the NI-780S-4L bolted ceramic package withstands the high ambient temperatures of industrial enclosures. Designers add harmonic filtering at the output to meet industrial EMC standards.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para MD7P19130HSR3 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | MD7P19130HR3 | MD7P19130HR5 | MD7P19130H | MRF7S19130HSR3 |
|---|---|---|---|---|---|
| Package | NI-780S-4L (CASE 465M-01) | NI-780S-4L (CASE 465M-01) - same | NI-780S-4L (CASE 465M-01) - same | NI-780S-4L (CASE 465M-01) - same | NI-780S-4L (CASE 465M-01) - same |
| Brand | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors | NXP Semiconductors |
| Frequency Range | 1930-1990 MHz | 1930-1990 MHz | 1930-1990 MHz | 1930-1990 MHz | 1930-1990 MHz |
| Output Power (W-CDMA) | 40 W avg | 40 W avg | 40 W avg | 40 W avg | 40 W avg |
| Power Gain | 20 dB | 20 dB | 20 dB | 20 dB | 20 dB |
| Drain Efficiency | 30% | 30% | 30% | 30% | 30% |
| ACPR (5 MHz) | -36 dBc | Similar | Similar | Similar | Similar |
| W-CDMA Optimization | Yes (HSR3 single-carrier tuning) | Multi-carrier/CW | Multi-carrier/CW | Base SKU | Yes (MRF prefix RF MOSFET line) |
Diferenciadores clave
- Single-carrier W-CDMA linearity tuning (frente a MD7P19130HR3)
- Drop-in NI-780S-4L ceramic package across family (frente a MD7P19130HR5)
- Higher gain than competing GaAs final-stage devices (frente a MRF7S19130HSR3)
Notas de diseño
At 40 W output with 30% drain efficiency from a 28 V rail, approximately 93 W is dissipated as DC heat in the MD7P19130HSR3 junction. The NI-780S-4L ceramic flanged package must be bolted to a heatsink with thermal compound; target a system thermal resistance below 0.3 C/W to keep Tj below 200 C. Estimated: Pdiss = (Pout/eta) - Pout = (40/0.30) - 40 = 93 W. Inadequate heatsinking will cause the device to enter thermal compression and degrade ACPR.
Gate-bias sequencing is mandatory: VGGS must be applied before VDDS to prevent the LDMOS from drawing uncontrolled current during turn-on. Use a sequencer IC or discrete RC network that delays VDDS by 10-50 ms after VGGS reaches the -2.5 V gate-bias threshold. Quiescent current (IDQ = 1250 mA) must be held within +/-50 mA to preserve -36 dBc ACPR per the NXP datasheet.
The NI-780S-4L input and output leads form a 50 ohm microstrip interface that must transition smoothly to the PCB substrate. Use Rogers RO4350B or RO4003C dielectric for the input/output matching networks to minimize loss at 1.9 GHz; FR-4 adds ~0.5 dB loss per match. Keep the gate-bias trace perpendicular to the RF path and decouple VGGS with a 10 uF tantalum plus 0.1 uF ceramic right at the package lead to prevent low-frequency oscillation.
Do not exceed 65 V VDS - transient spikes from drain-feed inductance can punch through the LDMOS even within the SOA curve. Add a 10 uF + 1 uF + 0.1 uF decoupling stack at the VDDS lead with low-ESR ceramic capacitors. Never operate the part without RF input - open-input conditions cause excessive voltage stress and can permanently damage the gate oxide. Add an isolator or load-mismatch protection circuit at the output for production deployments.
Información de cumplimiento
RoHS compliant per NXP product page; ceramic NI-780S-4L package is lead-free. AEC-Q100 not applicable (RF power MOSFET is not an automotive-qualified IC). Conflict-minerals declaration available from NXP product compliance portal.
